PTF 10135 5 Watts, 2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100% lot traceability is standard. Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability Typical Output Power vs. Input Power 8 Output Power (Watts) 7 6 5 101 35 A-1 234 569 953 4 3 VDD = 26 V IDQ = 70 mA f = 2000 MHz 2 1 0 0 0.1 0.2 0.3 0.4 0.5 Package 20249 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 39 Watts 0.22 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RqJC 4.5 °C/W e 1 e PTF 10135 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA V(BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 26 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 2 A gfs — 0.8 — Siemens Symbol Min Typ Max Units Gps 11 — — dB P-1dB 5 — — Watts hD 40 — — % Y — — 10:1 — RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 70 mA, f = 1.99 GHz) Drain Efficiency (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz —all phase angles at frequency of test) Typical Performance 50 Efficiency (%) Gain (dB) Gain 14 13 12 40 VDD = 26 V IDQ = 70 mA 30 20 Output Pow er (W) 11 10 1700 1800 1900 2000 10 0 2100 14 60 50 Gain (dB) 12 40 Efficiency (%) VDD = 26 V IDQ = 70 mA POUT = 4 W 10 8 30 20 Return Loss (dB) 6 4 1930 Frequency (MHz) 10 1940 1950 1960 1970 Frequency (MHz) 2 1980 0 1990 Return Loss 15 Gain (dB) 60 Output Power & Efficiency 16 16 Efficiency Broadband Test Fixture Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTF 10135 Output Power vs. Supply Voltage Intermodulation Distortion vs. Output Power 8 (as measured in a broadband circuit) 7 VDD = 26 V, IDQ = 70 mA -20 IMD (dBc) 6 IDQ = 70 mA f = 2000 MHz 5 f1 = 1999.9 MHz, f2 = 2000.0 MHz -40 5th -50 7th -60 -70 4 22 24 26 28 30 32 0 34 1 2 3 4 5 Gain vs. Gate Voltage Capacitance vs. Supply Voltage 20 18 Cds and Cgs (pF) VDD = 26 V 16 PIN = 0.05 W 12 8 f = 1.9 4 1.2 VGS = 0 V f = 1 MHz 15 Cgs 12 0 9 0.6 Cds 6 0.4 3 0.2 Crss 0 3 4 5 6 0 Gate-Source Voltage (Volts) 10 Bias Voltage vs. Temperature Voltage normalized to 1.0 V Series show current (A) Bias Voltage (V) 1.01 0.05 1 0.145 0.99 0.24 0.98 0.335 0.43 0.97 0.525 0.96 -20 20 30 Supply Voltage (Volts) 1.03 1.02 30 80 Temp. (°C) 3 1.0 0.8 f = 2.0 GHz 2 6 Output Power (Watts-PEP) Supply Voltage (Volts) Power Gain (dB) 3rd Order -30 130 0.0 40 Crss (pF) Output Power (Watts) -10 e PTF 10135 Impedance Data Z0 = 50 W VDD = 26 V, POUT = 5 W, IDQ = 70 mA ---> D TO R T OW AR D GEN E RA Z Load jX R jX 1.7 5.3 -2.9 8.0 3.0 1.8 3.3 -4.6 7.0 2.5 1.9 2.8 -5.0 6.0 1.2 2.0 2.6 -5.3 5.8 0.6 2.1 2.1 -6.0 5.7 -0.6 Z Source 0.1 2.1 GHz 0.2 5 0 .0 0 .3 Typical Scattering Parameters (VDS = 26 V, IDQ = 300 mA) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 100 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 0.874 0.889 0.892 0.897 0.903 0.860 0.873 0.873 0.891 0.890 0.904 0.896 0.932 0.932 0.950 0.955 0.959 0.945 0.946 0.949 0.953 0.946 -58 -115.5 -128.2 -138.1 -148.6 -154.5 -159.3 -162.8 -166.9 -169.6 -173.1 -174.7 -177.4 179.2 175.8 171.8 167.4 164.0 160.4 159.3 156.3 155.4 24.1 12.707 10.388 8.626 7.283 5.853 4.977 4.262 3.736 3.264 2.911 2.583 2.395 2.155 1.988 1.808 1.656 1.487 1.354 1.250 1.152 1.050 137 89.0 76.6 66.5 54.4 46.3 39.6 33.4 27.5 22.7 17.1 13.5 8.3 3.6 -1.6 -6.4 -12.0 -16.2 -21.3 -24.5 -29.2 -31.0 0.009 0.016 0.015 0.013 0.011 0.008 0.006 0.005 0.004 0.005 0.007 0.010 0.013 0.015 0.018 0.021 0.023 0.026 0.027 0.030 0.032 0.034 46 9.1 1.1 -5.3 -11.1 -14.7 2.4 10.7 42.5 70.3 82.9 87.4 87.3 88.4 87.5 84.4 81.5 78.8 76.6 72.6 69.4 68.6 0.770 0.759 0.768 0.798 0.833 0.825 0.837 0.853 0.861 0.863 0.875 0.866 0.896 0.905 0.930 0.944 0.972 0.955 0.963 0.948 0.961 0.931 -35 -73.3 -83.2 -92.6 -103.7 -112.5 -119.4 -126.7 -132.7 -137.9 -143.1 -146.7 -150.4 -155.0 -158.7 -162.9 -167.9 -172.4 -176.8 -180.0 175.9 173.8 4 S22 05 0.4 0.3 0.2 0.1 1.7 GHz WA V R < -- - GHz 1.7 GHz 2.1 GHz E LE Z Load W 0.0 - WAV E LE NGT HS Z Source W Z Load TOW A RD LO AD NG THS S 0.1 G Frequency 0 .2 Z Source e PTF 10135 Test Circuit Block Diagram for f = 1.96 GHz Q1 l1, l2, l7 l3 l4 l5 l6 C1, C3, C8, C9 C2, C5 PTF 10135 LDMOS RF FET 0.149 l 1.96 GHz 0.081 l 1.96 GHz 0.073 l 1.96 GHz 0.06 l 1.96 GHz 33 pF 0.7 pF Microstrip 50 W Microstrip 10.4 W Microstrip 15.9 W Microstrip 12.1 W Microstrip 15.9 W Chip Cap Chip Cap C4 C6 C7, C10 C11 L1, L2 R1, R2 R3 R4 Circuit Board Parts Layout (not to scale) 5 0.3–3.5 pF Variable Capacitor 0.3 pF Chip Cap 0.1 mF Chip Cap 10 mF SMT Tantalum 4 Turn #20 AWG, .120” I.D. 220 W Chip Resistor K1206 2K SMT Potentiometer 10 W Chip Resistor K1206 .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10135 Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10135 Uen Rev. A 11-24-98