PTF 102027 40 Watts, 925–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures excellent device lifetime and reliability. • • • • Performance at 960 MHz, 26 Volts - Output Power = 40 Watts - Power Gain = 15.0 dB Typical - Efficiency = 53% Typical Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability Typical Power Output and Efficiency vs. Input Power 70 Efficiency 60 60 50 50 40 40 30 VDD = 26 V 30 20 IDQ = 250 mA f = 960 MHz 20 10 Power Output 1020 27 Efficiency (%) Power Output (Watts) 70 1234 5600 50 10 0 0 0.0 0.5 1.0 1.5 2.0 Input Power (Watts) Package 20222 RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 250 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 40 W, IDQ = 250 mA, f = 960 MHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gpe 14.5 15 — dB P-1dB 40 45 — Watts h 40 53 — % Y 10:1 — — — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 102027 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current VDS = 26 V, VGS = 0 V Gate Threshold Voltage VDS = 10 V, ID = 100 mA Forward Transconductance VDS = 5 V, ID = 3 A Symbol Min Typ Max Units V(BR)DSS 65 — — Volts IDSS — — 1.0 mA VGS(th) 3.0 — 5.0 Volts gfs — 2.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 125 Watts 0.714 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 1.4 °C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 60 Gain Efficiency (%) 16 14 50 Gain (dB) 40 VDD = 26 V 12 30 IDQ = 250 mA 10 925 930 935 940 945 950 955 20 960 Efficiency 14 50 12 VDD = 26 V 40 10 IDQ = 250 mA 30 8 POUT = 40 W 20 -15 10 6 4 2 925 Frequency (MHz) 0 -30 -10 960 Return Loss (dB) 930 935 940 945 950 Frequency (MHz) 2 60 955 Efficiency (%) 18 Gain (dB) Output Power (W) 70 Gain 16 Return Loss 70 Output Power & Efficiency 20 Broadband Test Fixture Performance 18 e PTF 102027 Power Gain vs. Output Power Output Power vs. Supply Voltage 17 IDQ = 325 mA IDQ = 250 mA 45 Power Gain (dB) 40 35 IDQ = 250 mA f = 960 MHz 30 25 16 15 IDQ = 175 mA VDD = 26 V f = 960 MHz 14 20 22 24 26 28 30 0 1 Supply Voltage (Volts) Intermodulation Distortion vs. Output Power 1000 VDD = 26 V, IDQ = 250 mA 7 120 -20 3rd Order 6 100 Cds and Cgs (pF) f1 = 959 MHz, f2 = 960 MHz 5th -40 -50 7th -60 VGS = 0 V f = 1 MHz 80 60 40 5 Cgs 4 Cds 3 2 20 1 Crss -70 0 0 5 10 15 20 25 30 35 40 45 50 0 0 10 Gate-Source Voltage vs. Case Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.200 0.692 1.183 1.675 2.167 2.658 0.95 -20 20 30 Supply Voltage (Volts) Output Power (Watts-PEP) Bias Voltage (V) IMD (dBc) 100 Capacitance vs. Supply Voltage (as measured in a broadband circuit) -30 10 Output Power (Watts) 0 20 40 60 Case Temperature (°C) 3 80 100 40 Crss Output Power (Watts) 50 e PTF 102027 Impedance Data VDD = 26 V, POUT = 40 W, IDQ = 250 mA D Z Source Z Load Z0 = 10 W G S Z Source W Frequency Z Load W MHz R jX R jX 925 0.770 1.98 2.64 1.28 930 0.750 2.09 2.60 1.38 940 0.700 2.10 2.50 1.57 950 0.650 2.20 2.43 1.78 960 0.625 2.32 2.40 1.98 Test Circuit Test Circuit Schematic for f = 960 MHz DUT PTF 102027 LDMOS Transistor l 1, l 9 l2 l3 l4 l 5, l 6 l7 l8 l 10 l 11 l 12 l 13 0.169 l 960 MHz 0.020 l 960 MHz 0.079 l 960 MHz 0.158 l 960 MHz 0.016 l 960 MHz 0.095 l 960 MHz 0.150 l 960 MHz 0.047 l 960 MHz 0.118 l 960 MHz 0.254 l 960 MHz 0.315 l 960 MHz Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 7.0 W Microstrip 7.0 W Microstrip 10 W Microstrip 10 W Microstrip 50 W Microstrip 50 W Microstrip 50 W Microstrip 85 W C1, C8 C2, C3, C9, C12 C6, C13 C4, C14 C5, C7 C10 C11 J1, J2 R1, R2, R3 PCB 4 Capacitor, 0.1 µF, 50V Digi-Key P4525-ND Capacitor, 36 pF 100B 360 Capacitor, 3.6 pF 100B 3R6 Capacitor, 3.3 pF 100B 3R3 Capacitor, 11 pF 100B 110 Capacitor, 100 µF, 50 V Digi-Key P5182-ND Capacitor, 5.1 pF 100B 5R1 Connector, SMA, Female, Panel Mount Ericsson, #Rpm 513 412/53 Resistor, 220 ohm, 1/4W Digi-Key 220QBK-ND .031” Thick, 2 Oz Copper Both Sides AlliedSignal, G200 e PTF 102027 Assembly Diagram (not to scale) ERICSSON ERICSSON 102027_A INPUT 10007_A INPUT 102027_A 10007_A OUTOUTPUT PUT Artwork (not to scale) 5 e PTF 102027 Case Outline Specifications Package 20222 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 102027 Uen Rev. A 01-30-01