PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS™ Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 50 Watts Min - Gain = 11.0 dB Typ - Efficiency = 35% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs. Input Power 50 50 40 40 30 30 20 VDD = 28 V 10 IDQ = 600 mA f = 2.17 GHz 20 Efficiency (%) Output Power (Watts) 60 1012 3456 2 994 A-12 6 10 0 0 0 1 2 3 4 5 6 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 15 W, IDQ = 600 mA, f = 2.11 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz —all phase angles at frequency of test) Symbol Min Typ Max Units G ps 10.0 11.0 — dB P-1dB 50 — — Watts hD 30 35 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10122 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA V(BR)DSS 65 — — Volts Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V IDSS — — 2.0 mA Gate Threshold Voltage VDS = 10 V, ID = 150 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 2 A gfs — 4.0 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 237 Watts 1.35 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 0.74 °C/W Typical Performance 12 70 11 60 Gain (dB) 10 50 9 40 8 VDD = 28 V IDQ = 600 mA 7 2000 2100 13 Efficiency @ P-1dB 12 Gain (dB) Output Power (W) 50 11 Gain 30 10 VDD = 28 V 9 IDQ = 600 mA 8 POUT = 15 W 30 Efficiency (%) 2200 7 20 2300 6 2100 2125 2150 0 20 - 5 -10 Return Loss 10 -15 -20 -25 0 2175 2200 Frequency (MHz) Frequency (MHz) 2 40 Return Loss (dB) Efficiency (%) Broadband Test Fixture Performance 14 Output Power & Efficiency Gain Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e PTF 10122 Intermodulation Distortion vs. Output Power Output Power vs. Supply Voltage -20 VDD = 28 V, IDQ = 600 mA 65 55 IDQ = 600 mA f = 2.2 GHz 45 -40 5th -50 7th -60 35 -70 24 26 28 30 32 34 0 10 Supply Voltage (Volts) 20 30 40 50 Output Power (Watts-PEP) Power Gain vs. Output Power Capacitance vs. Supply Voltage * 12 24 240 Cds and Cgs (pF) IDQ = 600 mA 10 IDQ = 300 mA 8 VDD = 28 V f = 2.2 GHz IDQ = 150mA 200 VGS = 0 V f = 1 MHz 160 18 Cgs 12 120 Cds 80 6 Crss 40 0 6 1.0 10.0 0 0 100.0 10 Output Power (Watts) 20 30 40 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) 0.1 Crss 22 Power Gain (dB) 3rd Order f1 = 2199 MHz, f2 = 2200 MHz -30 IMD (dBc) Output Power (Watts) 75 1.01 1.00 0.400 0.99 1.383 2.367 0.98 3.350 0.97 4.333 0.96 5.317 0.95 -20 30 Temp. (°C) 3 80 130 e PTF 10122 Impedance Data VDD = 28 V, POUT = 50 W, IDQ = 600 mA Z0 = 50 W D Z Source Z Load G S Z Source W Frequency Z Load W GHz R jX R jX 2.00 2.88 -7.20 1.05 -0.90 2.05 3.70 -7.80 1.30 -1.30 2.10 4.80 -8.80 1.50 -1.50 2.15 8.00 -8.90 1.40 -1.90 2.20 9.50 -7.30 1.30 -2.00 2.25 11.00 -3.00 1.22 -1.70 2.30 10.00 -0.60 1.30 -1.40 Test Circuit Test Circuit Block Diagram for f = 2.1–2.2 GHz Q1 l1 l2 l3 l4 l5 l6 l7 l8 C1, C9 PTF 10122 .240 l @ 2.15 GHz .0281 l @ 2.15 GHz .085 l @ 2.15 GHz .104 l @ 2.15 GHz .120 l @ 2.15 GHz .063 l @ 2.15 GHz .216 l @ 2.15 GHz .174 l @ 2.15 GHz 10 mF Chip Cap LDMOS RF Transistor Microstrip 50 W Microstrip 14.7 W Microstrip 9.5 W Microstrip 78 W Microstrip 6.82 W Microstrip 10.88 W Microstrip 65 W Microstrip 50 W ATC 100 B 4 C2, C10 0.1 mF Chip Cap ATC 100 B C3, C4, C5, C6 — 10 pF Chip Cap ATC 100 B C7 0.1 mF, 50 V Digi-Key Capacitor 2.2 QBK C8 100 mF, 50 V Digi-Key Capacitor L1 2.7 nH Chip Inductor L2 6mm SMT Ferrite Bead R1, R2 220 W Chip Resistor Digi-Key 2.2 QBK Circuit Board — Dielectric Thickness = 0.050”, er = 6.0 @ 1 MHz, 2 oz. Copper, TMM6, Rogers e PTF 10122 10122 e A-1234569946 Parts Layout (not to scale) Artwork (not to scale) 5 e PTF 10122 Package Mechanical Specifications Package 20248 Unless otherwise specified all tolerance ±0.005” Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA Pins: 1.Drain 2.Source 3.Gate Lead Thickness: 0.004 +0.002/-0.001” 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF10122 Uen Rev. A 11-16-99