PTF 10048 30 Watts, 2.1–2.2 GHz, W-CDMA GOLDMOS ® Field Effect Transistor Description The PTF 10048 is an internally matched 30–watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40% efficiency with 10.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 30 Watts Min - Gain = 10.5 dB Typ at 30 Watts Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 45 Efficiency 30 35 20 25 VDD = 28 V IDQ = 425 mA f = 2170 MHz 10 15 Efficiency (%) X Output Power (Watts) 40 100 A-1 234 48 569 940 Output Pow er 0 5 0 1 2 3 4 Input Power (Watts) RF Specifications Package 20237 (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 10 W, IDQ = 425 mA, f = 2.11 & 2.17 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 425 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 30 W, IDQ = 425 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W, IDQ = 425 mA, f = 2.17 GHz —all phase angles at frequency of test) Symbol Min Typ Max Units Gps 10 11 — dB P-1dB 30 36 — Watts h 30 40 — % Y — — 10:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 10048 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA Symbol Min Typ Max Units V(BR)DSS 65 65 — Volts Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 6 A gfs — 1.8 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD Above 25°C derate by 120 Watts 0.66 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RqJC 1.5 °C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Gain 11 40 10 9 Efficiency (%) VDD = 28 V IDQ = 425 mA 8 2000 2050 2100 35 Output Pow er (W) 2150 2200 2250 30 25 2300 12 Gain (dB) 10 8 6 35 VDD = 28 V IDQ = 425 mA POUT = 10 W 4 2 2100 Frequency (MHz) 2125 2150 0 25 - 5 -10 15 -15 Return Loss -20 -25 5 -30 2175 2200 Frequency (MHz) 2 Efficiency 45 Return Loss Gain (dB) 45 Efficiency (%) Gain (dB) 50 Output Power & Efficiency 12 Broadband Test Fixture Performance 14 e PTF 10048 Typical Performance Intermodulation Distortion vs. Output Power Output Power vs. Supply Voltage (as measured in a broadband circuit) 45 40 VDD = 28 V, IDQ = 425 mA 35 IDQ = 425 mA f = 2170 MHz 30 -40 5th -50 7th -60 25 -70 24 26 28 30 32 0 34 Supply Voltage (Volts) 5 10 15 20 25 30 Output Power (Watts-PEP) Power Gain vs. Output Power Capacitance vs. Supply Voltage * 12 9 160 11 140 Cds and Cgs (pF) ICQ = 425 mA 10 9 ICQ = 213 mA 8 VDD = 28 V f = 2170 MHz ICQ = 106 mA 7 VGS = 0 V f = 1 MHz Crss 120 8 7 6 100 6 Cgs 80 60 5 Cds 4 3 40 2 20 1 0 1 100 0 0 10 Output Power (Watts) 20 30 40 Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 Bias Voltage (V) 0 1.01 1.00 0.200 0.99 0.692 1.183 0.98 1.675 0.97 2.167 0.96 2.658 0.95 -20 30 80 Temp. (°C) 3 130 Crss (pF) 22 Power Gain (dB) 3rd Order f1 = 2169 MHz, f2 = 2170 MHz -30 IMD (dBc) Output Power (Watts) -20 e PTF 10048 Impedance Data (VDD = 28 V, Pout = 30 W, IDQ = 425 mA) Z Source W Frequency D Z Source Z Load G S Z Load W GHz R jX R jX 2.00 6.0 -16.7 3.6 -4.7 2.10 10.3 -19.0 3.4 -4.4 2.12 13.2 -19.3 3.4 -4.1 2.15 17.9 -17.3 3.0 -3.8 2.17 18.5 -17.2 2.8 -3.8 2.20 19.6 -12.3 2.9 -3.5 2.30 20.5 -4.6 3.0 -3.3 Z0 = 50 W 4 e PTF 10048 Test Circuit Test Circuit Schematic for f = 2.15 GHz DUT l1 l2, l5 l3 l4 l6 l7 C1, C10 C2, C5, C6, C9 C3, C8 C4 C7 J1, J2 L1 L2 R1, R2 R3 PTF 10048 LDMOS Power Transistor 0.052 l 2.15 GHz Microstrip 11.14 W 0.255 l 2.15 GHz Microstrip 50 W 0.075 l 2.15 GHz Microstrip 50 W 0.143 l 2.15 GHz Microstrip 10.2 W 0.250 l 2.15 GHz Microstrip 75 W 0.125 l 2.15 GHz Microstrip 80 W 10 µF Tantulum Capacitor 10 pF Chip Capacitor, ATC 100 B 0.1 µF, 50 V Digi-Key P4525-ND 0.2 pF, 50 V Chip Capacitor, ATC 100 A 0.9 pF Chip Capacitor, ATC 100 A SMA Female Connectors, Panel Mount 4.7 nH 6 mm SMT Ferrite Bead 220 W Chip Resistor, P220ECI 1.0 W Chip Resistor, P1.0ECT Circuit Board 0.031" thick, er = 4.0, G200, AlliedSignal, 2 oz. copper Parts Layout (not to scale) 5 e PTF 10048 Case Outline Specifications Package 20237 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com\rfpower 6 Specifications subject to change without notice. L3 © 1998, 1999, 2001 Ericsson Inc. EUS/KR 1522-PTF 10048 Uen Rev. A 02-13-01