PTF 102028 18 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 26 Volts - Output Power = 18 Watts Min - Power Gain = 15 dB Typ - Efficiency = 55% Typ • • • • • Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability Typical Output Power & Efficiency vs. Input Power 80 20 Output Pow er Efficiency 70 16 60 12 50 VDD = 26 V IDQ = 130 mA f = 960 MHz 8 4 0 0.0 0.3 0.5 0.8 40 Efficiency (%)x Output Power (Watts) 24 102 028 123 456 985 5A 30 20 1.0 Input Power (Watts) Package 20251 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 130 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz— all phase angles at frequency of test) Symbol Min Typ Max Units Gps 14 15 — dB P-1dB 18 20 — Watts h 50 55 — % Y — — 5:1 — All published data at TCASE = 25°C unless otherwise indicated. e 1 e PTF 102028 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 0.5 A gfs — 0.9 — Siemens Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 58 Watts 0.33 W/°C Above 25°C derate by Storage Temperature TSTG 150 °C Thermal Resistance (TCASE = 70°C) RqJC 3.0 °C/W Typical Performance 60 19 18 VDD = 26 V 17 IDQ = 130 mA Efficiency 55 50 45 Gain 16 40 12 VDD = 26 V IDQ = 130 mA POUT = 18 W Gain (dB) 8 40 880 900 920 940 35 960 4 920 930 30 0 -205 -10 10 -15 Return Loss (dB) -20 0 -25 940 950 960 Frequency (MHz) Frequency (MHz) 2 Efficiency 20 50 16 Return Loss Efficiency (%) 65 15 860 60 70 Output Pow er Gain 21 Broadband Test Fixture Performance 20 Efficiency (%)x Gain (dB) & Output Power (W)x Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency e 102028 Output Power (at 1 dB Compression) vs. Supply Voltage Power Gain vs. Output Power 16 24 Output Power (Watts) X 15 IDQ = 65 mA 14 IDQ = 35 mA VDD = 26 V f = 960 MHz 13 22 20 18 IDQ = 130 mA f = 960 MHz 16 14 12 0.1 1.0 10.0 22 100.0 27 Intermodulation Distortion vs. Output Power Capacitance vs. Supply Voltage (as measured in a broadband circuit) -30 Cds and Cgs (pF)x 3rd Order f1 = 959.900 MHz f2 =960.000 MHz 5th -40 7th -50 5 40 Cgs 4 30 VGS = 0 V f = 1 MHz 20 Cds 2 1 Crss 0 0 5 10 15 20 25 0 10 Bias Voltage vs. Temperature Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 20 30 Supply Voltage (Volts) x Output Power (Watts-PEP) X 1.03 0.075 0.585 0.33 0.84 1.095 1.35 30 80 Temp. (°C) 3 3 10 -60 Bias Voltage (V) x IMD (dBc) X -20 6 50 0 VDD = 26 V IDQ = 130 mA 37 Supply Voltage (Volts) X Output Power (Watts) X -10 32 130 0 40 Crss (pF) x Power Gain (dB) X IDQ = 130 e PTF 102028 R --> Impedance Data AT O O W AR D GE Z Load NER D Z Source Z0 = 50 W 0. 2 VDD = 26 V, POUT = 18 W, IDQ = 130 mA Z Load 0 .1 G 960 MHz S 2.0 2.7 5.8 4.4 880 2.0 2.6 5.5 4.6 900 2.0 2.4 5.0 5.0 920 1.9 2.3 4.8 5.1 960 1.9 2.1 4.7 5.3 4 0.1 960 MHz 0.2 860 Z Source 0 .0 jX V R ELE N jX G TH S R 0.1 Z Load W MHz OA D TO W AR D L Z Source W Frequency 860 MHz 860 MHz e 102028 Typical Scattering Parameters (VDS = 26 V, ID = 500 mA) f (MHz) S11 S21 S12 Mag Ang Mag Ang Mag Ang Mag Ang 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 0.828 0.821 0.817 0.825 0.836 0.847 0.859 0.870 0.883 0.892 0.902 0.909 0.919 0.922 0.930 0.934 0.941 0.943 0.944 0.946 0.950 0.950 0.952 0.952 0.952 0.953 0.956 0.954 0.952 0.952 0.949 0.948 0.947 0.946 0.945 0.943 0.942 0.945 0.947 0.949 0.951 0.952 0.956 -120 -138 -148 -155 -160 -164 -167 -170 -172 -174 -176 -179 180 178 176 174 173 171 170 169 167 166 164 163 162 160 159 157 156 154 153 151 150 148 147 145 143 142 140 139 137 136 134 27.9 19.2 14.1 10.8 8.75 7.09 5.96 5.02 4.31 3.71 3.20 2.81 2.48 2.19 1.97 1.77 1.61 1.47 1.31 1.21 1.12 1.02 0.952 0.902 0.805 0.781 0.732 0.688 0.660 0.619 0.573 0.591 0.523 0.492 0.498 0.453 0.442 0.433 0.406 0.401 0.392 0.376 0.357 103 87.8 77.5 69.6 62.7 56.4 51.3 45.6 42.2 36.9 33.3 29.6 26.7 23.6 21.1 17.5 16.3 12.5 10.8 8.51 5.94 3.97 4.03 0.16 -0.92 -1.19 -5.01 -5.67 -6.40 -6.60 -7.30 -7.58 -7.59 -7.59 -7.60 -7.64 -6.40 -6.23 -6.20 -5.74 -5.20 -4.36 -4.30 0.015 0.014 0.013 0.011 0.009 0.007 0.006 0.007 0.008 0.011 0.014 0.016 0.020 0.022 0.025 0.028 0.032 0.035 0.039 0.043 0.046 0.049 0.053 0.057 0.060 0.065 0.068 0.072 0.078 0.084 0.085 0.097 0.096 0.106 0.113 0.119 0.124 0.134 0.135 0.150 0.154 0.171 0.171 20.6 10.7 6.0 6.5 9.7 20.7 41.5 64.2 83.2 92.6 97.9 98.5 98.6 98.7 99.3 98.6 98.3 95.8 95.4 92.5 91.7 91.4 90.5 87.1 87.6 86.6 84.9 84.9 84.2 83.9 83.7 83.1 82.2 81.6 81.4 80.9 79.8 79.6 79.5 80.1 79.4 79.0 76.1 0.597 0.576 0.571 0.602 0.628 0.661 0.698 0.723 0.754 0.783 0.805 0.831 0.845 0.860 0.880 0.890 0.904 0.916 0.922 0.930 0.937 0.945 0.945 0.955 0.951 0.958 0.955 0.963 0.953 0.967 0.950 0.959 0.950 0.949 0.953 0.952 0.947 0.957 0.953 0.946 0.955 0.950 0.949 -65.9 -79.6 -91.7 -102 -110 -118 -124 -130 -135 -140 -144 -149 -152 -155 -158 -161 -164 -166 -168 -171 -172 -174 -176 -178 -180 178 177 175 173 172 170 169 167 166 163 163 160 159 157 156 153 153 150 5 S22 e PTF 102028 Test Circuit J2 J1 Test Circuit Schematic for f = 960 MHz DUT l1 l2 l3 l4 l5 PTF 102028 0.098 l 960 MHz 0.050 l 960 MHz 0.139 l 960 MHz 0.256 l 960 MHz 0.040 l 960 MHz Microstrip 50 W Microstrip 8.4 W Microstrip 8.4 W Microstrip 13.9 W Microstrip 50 W C1, C2, C4, C8 C3 C5 C6 C7 J1, J2 L1 R1, R2, R3 Circuit Board Assembly Diagram (not to scale) 6 Capacitor, 36 pF ATC 100 B Capacitor, 4.7 pF ATC 100 B Capacitor, 0.1, µF, 50 V Digi-Key P4525-ND Capacitor, 100 µF, 50 V Digi-Key P5182-ND Capacitor, 0.3 pF, 50 V ATC 100 B Connector, SMA, Female, Panel Mount Ericsson, # RPM 513 412/53 4 Turns, 20 AWG, .120 Dia I.D. N/A Resistor, 220 ohm Digi-Key 2.2 QBK .031 “ Thick, er = 4.0, AlliedSignal, G200, 2 oz. copper e 102028 Test Circuit Artwork ( not to scale ) Case Outline Specifications Package 20251 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 7 Specifications subject to change without notice. L3 © 2000 Ericsson Inc. EUS/KR 1522-PTF 102028 Uen Rev. A 11-29-00