FILTRONIC LP3000P100

LP3000P100
PACKAGED 2W POWER PHEMT
•
FEATURES
♦ 33 dBm Output Power at 1-dB Compression at 15 GHz
♦ 8 dB Power Gain at 15 GHz
♦ 60% Power-Added Efficiency
•
DESCRIPTION AND APPLICATIONS
The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP3000 also
features Si3N4 passivation and is available in die form or in other packages.
The LP3000P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
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ELECTRICAL SPECIFICATIONS @ TAmbient = 25°°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
800
975
1100
mA
Power at 1-dB Compression
P-1dB
VDS = 8 V; IDS = 50% IDSS
31.5
33
dBm
Power Gain at 1-dB Compression
G-1dB
VDS = 8 V; IDS = 50% IDSS
7
8
dB
Power-Added Efficiency
PAE
VDS = 8 V; IDS = 50% IDSS;
PIN = 17 dBm
45
%
Maximum Drain-Source Current
IMAX
VDS = 2 V; VGS = 1 V
1700
mA
Transconductance
GM
VDS = 2 V; VGS = 0 V
900
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 5 mA
Gate-Source Breakdown
Voltage Magnitude
|VBDGS|
Gate-Drain Breakdown
Voltage Magnitude
frequency=15 GHz
|VBDGD|
Phone: (408) 988-1845
Fax: (408) 970-9950
700
15
130
µA
-0.25
-1.2
-2.0
V
IGS = 8 mA
-12
-15
V
IGD = 8 mA
-12
-16
V
http:// www.filss.com
Revised: 1/20/01
Email: [email protected]
LP3000P100
PACKAGED 2W POWER PHEMT
•
ABSOLUTE MAXIMUM RATINGS
Notes:
•
•
•
•
Parameter
Symbol
Test Conditions
Drain-Source Voltage
VDS
Gate-Source Voltage
Min
Max
Units
TAmbient = 22 ± 3 °C
12
V
VGS
TAmbient = 22 ± 3 °C
-4
V
Drain-Source Current
IDS
TAmbient = 22 ± 3 °C
2xIDSS
mA
Gate Current
IG
TAmbient = 22 ± 3 °C
30
mA
RF Input Power
PIN
TAmbient = 22 ± 3 °C
700
mW
Channel Operating Temperature
TCH
TAmbient = 22 ± 3 °C
175
ºC
Storage Temperature
TSTG
—
175
ºC
Total Power Dissipation
PTOT
TAmbient = 22 ± 3 °C
3.0
W
-65
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
PTOT= 3.0W – (0.020W/°C) x THS
where THS = heatsink or ambient temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01
Email: [email protected]
LP3000P100
PACKAGED 2W POWER PHEMT
•
PACKAGE OUTLINE
(dimensions in mils)
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01
Email: [email protected]