FILTRONIC LP1500SOT2231

Filtronic
LP1500SOT223
Low Noise, High Linearity Packaged PHEMT
Solid State
FEATURES
•
•
•
•
•
+27 dBm Typical Power at 1800 MHz
15 dB Typical Power Gain at 1800 MHz
1.0 dB Typical Noise Figure
+42 dBm Typical Intercept Point
Color-coded by IDSS range
GATE
SOURCE
SOURCE
DRAIN
(TOP VIEW)
DESCRIPTION AND APPLICATIONS
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm
Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si3N4 passivation and is available in a die form or in a flanged ceramic package (P100) for high-power
applications, or in the SOT-89 plastic package.
Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power
amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (TA = 25°C)
SYMBOLS
IDSS
P1dB
G1dB
NF
IP3
IMAX
GM
VP
IGSO
BVGS
BVGD
PARAMETERS
Saturated Drain-Source Current
VDS = 2V VGS = 0V
LP1500-SOT223-1 BLUE
LP1500-SOT223-2 GREEN
LP1500-SOT223-3 RED
Output Power at 1dB Gain Compression
f = 1800 Mhz
VDS = 3.3V, IDS = 33% IDSS
Power Gain at 1dB Gain Compression
f = 1800 MHz
VDS = 3.3V, IDS = 33% IDSS
Noise Figure
VDS = 3.3V, IDS = 33% IDSS, f = 1.8 GHz
Output Intercept Point VDS = 3.3V, IDS = 33% IDSS, f = 1.8 GHz
Maximum Drain-Source Current
VDS = 2V VGS = +1V
Transconductance
VDS = 2V VGS = 0V
Pinch-Off Voltage
VDS = 2V IDS = 5mA
Gate-Source Leakage Current
VGS = -3V
Gate-Source Breakdown Voltage
IGS = 8mA
Gate-Drain Breakdown Voltage
IGD = 8mA
MIN
375
451
527
TYP
420
490
560
25.0
27.0
dBm
13.5
15.0
1.0
42
925
400
-1.2
10
-10
-11
dB
dB
dBm
mA
mS
V
300
-0.25
-8
-8
MAX
450
526
600
-2.0
75
UNITS
mA
µA
V
V
DSS-026 WF
Phone: (408) 988-1845
Internet: http://www.filtronicsolidstate.com
Fax: (408) 970-9950
Filtronic
LP1500SOT223
Low Noise, High Linearity Packaged PHEMT
Solid State
ABSOLUTE MAXIMUM RATINGS
(25°C)
1
SYMBOL
PARAMETER
RATING
VDS
VGS
IDS
IG
PIN
TCH
TSTG
PT
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Temperature
Storage Temperature
Power Dissipation
RECOMMENDED CONTINUOUS
OPERATING LIMITS
2
SYMBOL
PARAMETER
RATING
4V
-3V
IDSS
50 mA
350 mW
175°C
-65/175°C
1.7W
3,4
VDS
VGS
IDS
IG
PIN
TCH
TSTG
PT
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Temperature
Storage Temperature
Power Dissipation
GXdB
Gain Compression
3.5V
-1V
0.5 x IDSS
15 mA
250 mW
150°C
-20/50°C
3,4
1.4 W
8 dB
NOTES:
1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: PT ≡ (PDC + PIN) - POUT, where: PDC = DC bias power, POUT = RF output power, and
PIN = RF input power. Provide for adequate heatsinking at the large source lead.
4. Power Dissipation to be de-rated as follows above 25°C:
Absolute Maximum:
PT = 1.7W - (10mW/°C) x THS
Recommended Continuous Operating: PT = 1.4W - (10mW/°C) x THS
where THS = heatsink or ambient temperature.
5. Specifications subject to change without notice.
HANDLING PRECAUTIONS:
Care should be exercised during handling to avoid damage to the devices. Proper Electrostatic Discharge (ESD)
precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be
treated as Class 1A (0-500V), and further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263.
APPLICATIONS NOTES AND DESIGN DATA:
Applications Notes are available from your local FSS Sales Representative, or directly from the factory. Complete design
data, including S-parameters, Noise data, and Large-Signal models, is available on 3.5” diskette, or may be down-loaded
from our Web Page.
PACKAGE OUTLINE:
0 .2 6 4
0 .1 2 0
0 .2 8 6
0 .1 4 6
0 .0 5 1
0 .0 3 0
0 .0 9 0
0 .0 7 1
0 .0 1 2
(D IM E N S IO N S IN IN C H E S )
DSS-026 WF
Phone: (408) 988-1845
Internet: http://www.filtronicsolidstate.com
Fax: (408) 970-9950