2SK3596-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Operating and storage temperature range Ratings 200 170 ±30 ±120 ±30 30 387 20 5 1.67 135 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) Tch °C Tstg °C < < *3 I F -I D , -di/dt=50A/µs, Vcc BV DSS , Tch < *1 L=689µH, Vcc=48V *2 Tch< 150°C = = = 150°C = *4 VDS < = 200V *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=±30V VDS=0V ID=15A VGS=10V Typ. 200 3.0 5.0 25 250 100 66 Tch=25°C Tch=125°C ID=15A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 Ω V CC=100V ID=30A VGS=10V L=100µH Tch=25°C IF=30A VGS=0V Tch=25°C IF=30A VGS=0V -di/dt=100A/µs Tch=25°C Max. 10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 30 1.10 1.65 0.19 1.4 Units V V µA nA mΩ S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.926 75.0 Units °C/W °C/W 1 2SK3596-01L,S,SJ FUJI POWER MOSFET Characteristics Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=30A Allowable Power Dissipation PD=f(Tc) 200 500 175 400 150 300 EAV [mJ] PD [W] 125 100 75 200 50 100 25 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 starting Tch [ °C] Tc [°C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 120 20V 100 100 10V 8V 7.5V ID[A] ID [A] 80 7.0V 60 6.5V 40 10 1 6.0V 20 VGS=5.5V 0.1 0 0 2 4 6 8 10 0 12 1 2 3 4 5 6 7 8 9 10 VGS[V] VDS [V] Typical Drain-Source on-state Resistance Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0.20 100 VGS= 6.0V 5.5V 0.15 gfs [S] RDS(on) [ Ω ] 10 6.5V 7.0V 7.5V 8V 0.10 10V 20V 1 0.05 0.1 0.1 0.00 1 10 ID [A] 100 0 20 40 60 80 100 120 ID [A] 2 2SK3596-01L,S,SJ FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A 200 7.0 6.5 180 6.0 5.5 max. 5.0 140 VGS(th) [V] RDS(on) [ m Ω ] 160 120 100 4.0 3.5 3.0 max. 80 4.5 min. 2.5 60 2.0 typ. 1.5 40 1.0 20 0.5 0 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 Tch [°C] 50 75 100 125 150 Tch [°C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25°C 10 1 14 12 Ciss 10 Vcc= 100V 8 0 C [nF] VGS [V] 10 Coss 6 10 -1 4 Crss 2 0 10 0 10 20 30 40 50 60 70 -2 80 10 -1 10 0 Qg [nC] 10 1 10 2 VDS [V] Typical Switching Characteristics vs. ID Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 10 100 3 t=f(ID):Vcc=48V, VGS=10V, RG=10Ω tf 10 2 td(off) t [ns] IF [A] 10 10 1 0.1 0.00 td(on) 1 tr 10 0.25 0.50 0.75 1.00 1.25 VSD [V] 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 ID [A] 3 2SK3596-01L,S,SJ 10 1 FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Zth(ch-c) [°C/W] 10 10 Avalanche current IAV [A] 10 0 -1 10 -2 10 -3 10 Single Pulse 10 10 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C. Vcc=48V 0 1 0 -1 -2 10 -8 10 -7 10 -6 t [sec] 10 -5 10 -4 10 -3 10 -2 tAV [sec] Outline Drawings (mm) FUJI POWER MOS FET FUJI POWER MOS FET FUJI POWER MOS FET OUT VIEW OUT VIEW See Note: 1. See Note: 1. Trademark See Note: 1. 4 Trademark Fig. 1. Fig. 1. Trademark Lot No. Lot No. Lot No. Type name Type name Type name PRE-SOLDER Fig. 1. Fig. 1. CONNECTION CONNECTION 4 1 GATE 2 DRAIN 3 SOURCE Solder Plating Solder Plating Pre-Solder CONNECTION 1 2 3 1 GATE 2 DRAIN 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. 3 SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. GATE DRAIN SOURCE Pre-Solder Notes 1. ( ) : Reference dimensions. 1 4 2 3 Notes 1. ( ) : Reference dimensions. Note: 1. Guaranteed mark of avalanche ruggedness. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. 4