2SK3591-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 150 120 ±40 ±160 ±30 40 387 20 5 2.16 70 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *6 kVrms < < *3 I F -I D , -di/dt=50A/µs, Vcc BV DSS , Tch < *1 L=335µH, Vcc=48V *2 Tch< 150°C = = = 150°C = *4 VDS < = 150V *5 VGS=-30V *6 t=60sec f=60Hz Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=±30V VDS=0V ID=20A VGS=10V Typ. 150 3.0 Tch=25°C Tch=125°C ID=20A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=20A VGS=10V 13 RGS=10 Ω VCC =75V ID=40A VGS=10V L=100µH Tch=25°C IF=40A VGS=0V Tch=25°C IF=40A VGS=0V -di/dt=100A/µs Tch=25°C 10 31 26 1940 310 24 20 26 50 20 52 15 18 Max. 5.0 25 250 100 41 2910 465 36 30 39 75 30 78 22.5 27 40 1.10 0.14 0.77 1.65 Units V V µA nA mΩ S pF ns nC A V µs µC Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/denshi/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.786 58.0 Units °C/W °C/W 1 2SK3591-01MR FUJI POWER MOSFET Characteristics 80 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=40A Allowable Power Dissipation PD=f(Tc) 500 70 400 60 300 EAV [mJ] PD [W] 50 40 30 200 20 100 10 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 starting Tch [°C] Tc [°C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 160 20V 100 10V 120 80 ID[A] ID [A] 8V 7.5V 7.0V 40 10 1 6.5V 6.0V 0.1 VGS=5.5V 0 0 2 4 6 8 10 0 12 1 2 3 VDS [V] 4 5 6 7 8 9 10 VGS[V] Typical Transconductance Typical Drain-Source on-state Resistance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 0.15 100 VGS= 5.5V 6.0V 0.12 6.5V 7.0V 7.5V gfs [S] RDS(on) [ Ω ] 10 8V 0.09 10V 20V 0.06 1 0.03 0.1 0.1 0.00 1 10 ID [A] 100 0 40 80 120 160 ID [A] 2 2SK3591-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µA Drain-Source On-state Resistance RDS(on)=f(Tch):ID=20A,VGS=10V 7.0 100 6.5 90 5.5 70 5.0 VGS(th) [V] RDS(on) [ m Ω ] 6.0 80 60 50 max. max. 4.5 4.0 3.5 3.0 40 typ. 30 min. 2.5 2.0 1.5 20 1.0 10 0.5 0 -50 -25 0 25 50 75 100 125 0.0 150 -50 -25 0 25 Tch [°C] 50 75 100 125 150 Tch [°C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=40A, Tch=25°C 10 1 14 12 Ciss 10 Vcc= 75V 0 Coss C [nF] VGS [V] 10 8 6 10 -1 4 Crss 2 0 0 20 40 60 10 80 -2 10 -1 10 0 Qg [nC] 10 1 10 2 VDS [V] Typical Switching Characteristics vs. ID Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 3 10 100 t=f(ID):Vcc=48V, VGS=10V, RG=10Ω tf 2 10 td(off) t [ns] IF [A] 10 td(on) 1 0.1 0.00 tr 10 1 0 10 0.25 0.50 0.75 1.00 1.25 VSD [V] 1.50 1.75 2.00 -1 10 10 0 10 1 2 10 ID [A] 3 2SK3591-01MR 10 o Zth(ch-c) [ C/W] 10 FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):Duty=0 1 0 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 2 IAV=f(tAV):starting Tch=25°C. Vcc=48V 10 Avalanche current IAV [A] Single Pulse 1 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 tAV [sec] 4