FUJI 2SK3556

2SK3556-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V DS
VDSX *5
ID
ID(puls]
VGS
IAR *2
EAS *1
dVDS/dt *4
dV/dt *3
PD Ta=25°C
Tc=25°C
Tch
Tstg
Ratings
250
220
±25
±100
±30
25
372
20
5
2.02
135
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
°C
°C
<
< DSS, Tch=150°C
<
*1 L=0.67mH, Vcc=48V *2 Tch=150°C
*3 IF<
=-ID, -di/dt=50A/µs, Vcc=BV
*4 VDS<
250V
*5
V
GS
=-30V
*6
t=60sec
f=60Hz
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Symbol
V(BR)DSS
VGS(th)
Zero gate voltage drain current
IDSS
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
V SD
t rr
Qrr
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Min.
Test Conditions
ID=250µA
VGS=0V
ID= 250µA
VDS=VGS
VDS=250V
VDS=200V
VGS=±30V
ID=12.5A
VGS=0V
VGS=0V
VDS=0V
ID=12.5A
VDS =75V
VGS=0V
f=1MHz
VDS=25V
Typ.
250
3.0
Tch=25°C
Tch=125°C
10
75
16
2000
220
15
20
30
60
20
44
14
16
VGS=10V
8
VCC=72V ID=12.5A
VGS=10V
RGS=10 Ω
V CC =72V
ID=12A
VGS=10V
L=100µH Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs Tch=25°C
Max.
5.0
25
250
100
100
3000
330
30
30
45
90
30
66
21
24
25
1.10
0.45
1.5
1.65
Units
V
V
µA
nA
mΩ
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.926
62.0
Units
°C/W
°C/W
1
2SK3556-01L,S,SJ
FUJI POWER MOSFET
Characteristics
200
Typical Output Characteristics
Allowable Power Dissipation
PD=f(Tc)
100
ID=f(VDS):80µs Pulse test,Tch=25°C
175
20V
80
10V
150
8V
7.5V
60
ID [A]
PD [W]
125
100
7.0V
40
75
6.5V
50
20
6.0V
25
VGS=5.5V
0
0
0
25
50
75
100
125
150
0
2
4
6
Tc [°C]
8
10
12
VDS [V]
Typical Transconductance
Typical Transfer Characteristic
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
100
gfs [S]
ID[A]
10
10
1
1
0.1
0
1
2
3
4
5
6
7
8
9
0.1
0.1
10
1
10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.25
270
VGS=
5.5V
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
240
6.0V
6.5V
7.0V
210
7.5V
RDS(on) [ m Ω ]
RDS(on) [ Ω ]
0.20
100
ID [A]
8V
0.15
10V
20V
0.10
180
150
max.
120
90
typ.
60
0.05
30
0.00
0
0
20
40
60
ID [A]
80
100
-50
-25
0
25
50
75
100
125
150
Tch [°C]
2
2SK3556-01L,S,SJ
7.0
FUJI POWER MOSFET
Typical Gate Charge Characteristics
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS=f(Qg):ID=25A, Tch=25°C
6.5
14
6.0
12
max.
5.0
Vcc= 36V
10
4.5
72V
96V
4.0
VGS [V]
VGS(th) [V]
5.5
3.5
3.0
min.
8
6
2.5
2.0
4
1.5
1.0
2
0.5
0.0
-50
-25
0
25
50
75
100
125
0
150
0
10
20
30
1
10
40
50
60
Qg [nC]
Tch [°C]
Typical Forward Characteristics of Reverse Diode
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
IF=f(VSD):80µs Pulse test,Tch=25°C
100
Ciss
0
10
IF [A]
C [nF]
10
Coss
-1
1
10
Crss
-2
10
-1
0
10
1
10
10
2
10
VDS [V]
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
Typical Switching Characteristics vs. ID
3
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
10
tf
2
10
t [ns]
td(off)
tr
td(on)
1
10
0
10
-1
10
0
1
10
10
2
10
ID [A]
3
2SK3556-01L,S,SJ
FUJI POWER MOSFET
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
1
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
-5
10
-4
10
-3
10
-2
10
-1
10
10
0
10
t [sec]
Avalanche current IAV [A]
Maximum Avalanche Current Pulsewidth
10
2
10
1
10
0
IAV=f(tAV):starting Tch=25°C. Vcc=48V
Single Pulse
10
-1
-2
10
-8
10
10
-7
10
-6
10
-5
-4
10
10
-3
10
-2
tAV [sec]
Outline Drawings (mm)
Type(S)
Type(L)
FUJI POWER MOS FET
Type(SJ)
FUJI POWER MOS FET
FUJI POWER MOS FET
OUT VIEW
OUT VIEW
See Note: 1.
See Note: 1.
See Note: 1.
4
Trademark
Trademark
Fig. 1.
Trademark
Fig. 1.
Lot No.
Lot No.
Lot No.
Type name
Type name
Type name
PRE-SOLDER
Fig. 1.
Fig. 1.
CONNECTION
CONNECTION
Solder Plating
CONNECTION
1
2
2 DRAIN
3 SOURCE
GATE
DRAIN
SOURCE
4
Note: 1. Guaranteed mark of
avalanche ruggedness.
1
GATE
2
DRAIN
3
SOURCE
Solder Plating
Pre-Solder
Pre-Solder
1 GATE
3
1
4 2
3
Notes
Notes
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
1. ( ) : Reference dimensions.
DIMENSIONS ARE IN MILLIMETERS.
Note: 1. Guaranteed mark of
avalanche ruggedness.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
DIMENSIONS ARE IN MILLIMETERS.
Note: 1. Guaranteed mark of avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
4