FUJI 6MBP150RA120

6MBP150RA120
1200V / 150A 6 in one-package
IGBT-IPM R series
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
INV Collector current
DC
1ms
DC
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Rating
Min.
Max.
0
0
200
0
0
0
0
-40
-20
-
900
1000
800
1200
150
300
150
1040
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *6
3.5 *6
Unit
V
V
V
V
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
Fig.1 Measurement of case temperature
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item
INV
Symbol
Condition
VCE=1200V input terminal open
Collector current at off signal input
ICES
Ic=150A
Collector-Emitter saturation voltage VCE(sat)
-Ic=150A
Forward voltage of FWD
VF
Min.
–
–
–
Typ.
–
–
–
Max.
1.0
2.6
3.0
Unit
mA
V
V
6MBP150RA120
IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Symbol
Iccp
ICCN
Vin(th)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level
INV
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
*7 Switching frequency of IPM
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
VUV
VH
tALM
tSC
RALM
Condition
Min.
Typ.
Max.
fsw=0 to 15kHz Tc=-20 to 100°C *7
3
18
fsw=0 to 15kHz Tc=-20 to 100°C *7
10
65
ON
1.00
1.35
1.70
OFF
1.70
2.05
2.40
Rin=20k ohm
8.0
VDC=0V, Ic=0A, Case temperature, Fig.1 110
125
20
surface of IGBT chips
150
20
Tj=125°C
225
Tj=25°C Fig.2
10
11.0
12.5
0.2
1.5
2
Tj=25°C Fig.3
12
1425
1500
1575
Unit
mA
mA
V
V
V
°C
°C
°C
°C
A
µs
V
V
ms
µs
ohm
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item
Switching time (IGBT)
Symbol Condition
ton
toff
trr
Switching time (FWD)
Min.
IC=150A, VDC=600V
Typ.
Max.
Unit
-
-
µs
µs
µs
0.3
-
IF=150A, VDC=600V
3.6
0.4
Thermal characteristics(Tc=25°C)
Item
Junction to Case thermal resistance
INV
IGBT
FWD
Case to fin thermal resistance with compound
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)
Typ.
0.05
Max.
0.12
0.29
-
Unit
°C/W
°C/W
°C/W
Typ.
15
-
Max.
800
16.5
20
3.0
3.0
Unit
V
V
kHz
N·m
N·m
Recommendable value
Item
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque
Mounting (M5)
Terminal (M5)
Symbol
VDC
VCC
fSW
-
Min.
200
13.5
1
2.5
2.5
6MBP150RA120
IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 920g
6MBP150RA120
IGBT-IPM
Characteristics (Representative)
Control Circuit
In p u t sig n a l th re sh o ld vo lta g e
vs. P o w e r su p p ly vo lta g e
P ow er s up ply c urre nt v s. S w itch ing fre qu en cy
Tj= 10 0 °C
70
V c c =1 5 V
60
V c c =1 3 V
50
40
30
V c c =1 7 V
V c c =1 5 V
20
2.5
: V in(on ),V in(off) (V )
V c c =1 7 V
P -s ide
N -s id e
Inpu t s ignal th res hold voltage
P o w e r su p p ly c u rren t : Ic c (m A )
80
Tj= 2 5 °C
Tj= 1 2 5 °C
2
} V in(o ff)
1.5
} V in(o n)
1
0.5
V c c =1 3 V
10
0
0
0
5
10
15
20
12
13
25
14
15
16
17
18
P ow er s up ply voltage : V cc (V)
S w itc hin g freq ue n cy : fs w (k H z )
U n d e r vo lta g e h y ste ris is v s. Jn c tio n te m p e ra tu re
U n d e r vo lta g e v s. J u n c tio n te m p e ra tu re
1
U nd er vo ltage h ysterisis : V H (V )
U n d e r v o lta g e : V U V T (V )
14
12
10
8
6
4
0.8
0.6
0.4
0.2
2
0
0
20
40
60
80
100
120
140
20
40
A la rm h o ld tim e : tA L M (m S e c)
3
2.5
T j= 125°C
2
T j= 25°C
1.5
1
0.5
12
13
14
15
16
P o w e r s u p p ly vo lta g e : V c c (V )
80
10 0
12 0
14 0
17
18
17
18
O ve r h e a tin g ch a ra c te ris tics
Tc O H ,T jO H ,T cH ,T jH vs . V cc
20 0
O H h y s te ris is : T c H ,T jH (°C )
O v e r h e a tin g p ro te c tio n : T c O H ,T jO H (°C )
A la rm ho ld tim e v s . P o w e r s u p ply v o lta ge
0
60
Jun ction tem p erature : T j (°C )
J u n c tio n te m p e ra tu r e : T j (°C )
T jO H
15 0
TcO H
10 0
50
T c H ,T jH
0
12
13
14
15
16
P o w e r s u p p ly v o lta g e : V c c (V )
6MBP150RA120
IGBT-IPM
Inverter
C o lle c to r c u rre n t vs . C o lle cto r-E m itte r vo lta g e
T j= 2 5 °C
2 50
Vcc=15V
Vcc=17V
C o llec tor C u rre n t : Ic (A )
C o lle c tor C u rre n t : Ic (A )
250
C o lle c to r c u rre n t vs . C o lle cto r-E m itte r vo lta g e
T j= 1 2 5 °C
200
Vcc=13V
150
100
Vcc=17V
2 00
Vcc=13V
1 50
1 00
50
50
0
0
0 .5
1
1 .5
2
2 .5
3
1
1 .5
2
2 .5
3
C o lle cto r-E m itter v o lta ge : V c e (V )
C o lle cto r-E m itter v o lta g e : V c e (V )
S w itc h in g tim e vs . C o lle cto r c u rre n t
E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 2 5 °C
S w itc h in g tim e vs . C o lle cto r c u rre n t
E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 1 2 5 °C
3 .5
1 0 0 00
S w itch ing tim e : ton ,to ff,tf (n S e c )
S w itch ing tim e : to n ,to ff,tf (n S e c )
0 .5
3 .5
10 0 0 0
to ff
to n
1 0 00
tf
1 00
to ff
to n
1 000
tf
1 00
10
10
50
1 00
1 50
2 00
0
2 50
50
1 00
1 50
2 00
C o lle cto r cu rre nt : Ic (A )
C o lle cto r cu rre n t : Ic (A )
F o rw a rd cu rre n t vs . F o rw a rd vo lta g e
R ev e rs e re c o ve ry c h a ra cte ristics
trr,Irr v s. IF
2 50
12 5 °C
2 5 °C
2 00
R e ve rs e rec o v e ry c urre n t : Irr(A )
R e v e rs e re c o v e ry tim e : trr(n S e c )
0
F o rw a rd C u rre n t : If (A )
Vcc=15V
trr1 2 5 °C
1 00
1 50
1 00
50
2 50
trr2 5 °C
Irr1 2 5 °C
Irr2 5 °C
10
0
0
0 .5
1
1 .5
2
F o rw a rd v o lta g e : V f (V )
2 .5
3
0
50
1 00
1 50
F orw a rd c u rren t : IF (A )
2 00
2 50
6MBP150RA120
IGBT-IPM
R e ve rs e d b ia s e d s a fe o p e ra tin g a re a
V cc = 1 5 V ,Tj <
= 1 2 5 °C
1
2 100
FW D
1 800
C o lle cto r cu rre n t : Ic (A )
T h e rm a l re s is ta n c e : R th (j-c ) (°C /W )
T ra n sie n t th e rm a l re sis ta n c e
1 500
0 .1
IG B T
1 200
0.01
SC SO A
(n o n -re pe titiv e p uls e )
9 00
6 00
3 00
0 .0 01
RBSO A
(R e p e titiv e p u ls e )
0
0 .0 01
0.01
0 .1
0
1
2 00
P o w e r d e ra tin g fo r IG B T
(p e r d e vice )
8 00
1 000 1 200 1 400
C o lle c te r P o w e r D is s ip a tion : P c (W )
P o w e r d e ra tin g fo r F W D
(p e r d e v ic e )
1200
C o lle c te r P o w e r D is s ip a tio n : P c (W )
6 00
C o llec tor-E m itte r v o lta g e : V ce (V )
P u lse w id th :P w (s e c )
1000
800
600
400
200
500
400
300
200
100
0
0
0
20
40
60
80
100
120
140
0
160
60
50
40
E on
20
E o ff
10
E rr
0
S w itc h in g lo ss : E o n,E off,E rr (m J/c yc le )
S w itch in g L o ss vs . C o lle cto r C u rre n t
E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 2 5 °C
30
20
40
60
80
100
120
140
160
C a se T e m p e ra tu re : T c (°C )
C a se T e m p e ra tu re : T c (°C )
S w itc h in g lo ss : E o n ,E o ff,E rr (m J/c yc le )
4 00
S w itc h in g L o ss v s . C o lle cto r C u rre n t
E d c = 6 0 0 V ,V cc = 1 5 V ,T j= 1 2 5 °C
60
E on
50
40
30
E o ff
20
E rr
10
0
0
50
1 00
1 50
C ollec to r c u rre n t : Ic (A )
2 00
2 50
0
50
1 00
1 50
C ollec to r c u rre n t : Ic (A )
2 00
2 50
6MBP150RA120
IGBT-IPM
O ve r c urre n t pro te ctio n le v el : Io c (A )
O v e r c u rre n t p ro te c tio n v s . Ju n c tio n te m p e ra tu re
V cc = 1 5 V
6 00
5 00
4 00
3 00
2 00
1 00
0
0
20
40
60
80
1 00
J u nc tio n tem p e ra tu re : T j(°C )
1 20
1 40