ETC 6MBP50RA-060

IGBT IPM
600V
6×50A
6MBP 50RA-060
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings
Items
DC Bus Voltage
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Continuous
Collector
1ms
Current
Duty=62.6%
Collector Power Dissipation One Transistor
Voltage of Power Supply for Driver
Input Signal Voltage
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
Junction Temperature
Operating Temperature
Storage Temperature
Isolation Voltage
A.C. 1min.
Screw Torque
( Tc=25°C)
Symbols
VDC
VDC(Surge)
VSC
VCES
IC
ICP
-IC
PC
VCC
VIN
IIN
VALM
IALM
Tj
TOP
Tstg
Viso
Mounting *1
Terminals *1
Ratings
Max.
450
500
400
600
50
100
50
198
0
20
0
VZ
1
0
VCC
15
150
-20
100
-40
125
2500
3.5
3.5
n Outline Drawing
Units
Min.
0
0
200
0
V
A
W
V
mA
V
mA
°C
V
Nm
Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
INV
Items
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
Symbols
ICES
VCE(Sat)
VF
Conditions
VCE=600V, Input Terminal Open
IC=50A
-IC=50A
Min.
Typ.
Max.
1.0
2.8
3.0
Units
mA
V
V
Min.
3
10
1.00
1.25
Typ.
Max.
18
65
1.70
1.95
Units
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
Symbols
ICCP
ICCN
Input Signal Threshold Voltage
VIN(th)
Input Zener Voltage
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
VZ
TCOH
TCH
TjOH
TjH
IOC
tDOC
tALM
RALM
VUV
VH
Conditions
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Off
RIN=20kΩ
VDC=0V, IC=0A, Case Temp.
1.35
1.60
8.0
110
150
Tj=125°C
Tj=25°C
75
V
125
20
Surface Of IGBT Chip
mA
°C
20
1.5
1425
11.0
0.2
10
2
1500
1575
12.5
A
µs
ms
Ω
V
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Switching Time
Symbols
tON
tOFF
tRR
Conditions
IC=50A, VDC=300V
Min.
0.3
Typ.
IF=50A, VDC=300V
Max.
Units
3.6
0.4
µs
Max.
0.63
1.33
Units
• Thermal Characteristics
Items
Thermal Resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Diode
With Thermal Compound
Min.
Typ.
0.05
°C/W
6MBP 50RA-060
n Equivalent Circuit
Drivers include following functions
À Short circuit protection circuit
Á Amplifier for driver
 Undervoltage protection circuit
à Overcurrent protection circuit
Ä IGBT Chip overheating protection
IGBT IPM
600V
6×50A
IGBT IPM
600V
6×50A
6MBP 50RA-060
n Control Circuit
Input Signal Threshold Voltage
Power Supply Current vs. Switching Frequency
vs. Power Supply Voltage
T j=100°C
2,5
T j=25°C
V C C =15V
Input Signal Threshold Voltage
V C C =13V
Power Supply Current : I
20
15
10
V C C =17V
P-Side
V C C =15V
5
T j =125°C
2,0
: V in(on) , V in(off) [V]
N -Side
CC
[mA]
V C C =17V
25
V in(off)
1,5
V in(on)
1,0
0,5
V C C =13V
0
5
10
15
20
0,0
12
25
13
S w itching Frequency : fsw [kHz]
14
17
18
19
[V]
H
Under Voltage Hysterisis : V
10
UV
[V]
16
1,0
12
Under Voltage : V
15
Under Voltage Hysterisis vs. Junction Temperature
Under Voltage vs. Junction Temperature
8
6
4
2
0
20
14
Power Supply Voltage : V cc [V]
40
60
80
100
120
0,8
0,6
0,4
0,2
0,0
20
140
40
Junction Temperature : T j [°C]
60
80
100
120
140
Junction Temperature: T j [°C]
Alarm Hold Time vs. Power Supply Voltage
Over Heating Characteristics
T c O H , T jOH , T c H , T jH vs. V cc
3,0
, T jOH [°C]
2,0
T j=25°C
1,5
1,0
0,5
0,0
12
13
14
15
16
Power Supply Voltage : V cc [V]
17
18
, T jH [°C]
cH
cOH
T j=125°C
Over Heating Hysterisis : T
2,5
Over Heating Protection : T
Alarm Hold Timen : t
ALM
[ms]
200
T jOH
150
T cOH
100
50
T c H ,T jH
0
12
13
14
15
16
Power Supply Voltage : V cc [V]
17
18
IGBT IPM
600V
6×50A
6MBP 50RA-060
n Inverter
C o llector Current vs. Collector-Emitter Voltage
C o llector Current vs. Collector-Emitter Voltage
T j=25°C
100
V C C =17V,15V, 13V
[A]
C
60
40
20
60
40
20
0
0
1
2
3
0
4
1
2
3
C o llector-Em itter Voltage : V C E [V]
S w itching Time vs. Collector Current
S w itching Time vs. Collector Current
V D C =300V, V C C =15V, T j=25°C
V D C =300V, V C C =15V, T j=125°C
, t r, t off , t f [ns]
C o llector-Emitter Voltage : V C E [V]
t on
t off
4
t off
t on
1000
Switching Time : t
on
1000
on
, t r, t off , t f [ns]
0
Switching Time : t
V C C =17V,15V, 13V
80
Collector Current : I
Collector Current : I
C
[A]
80
T j=125°C
100
tf
100
0
10
20
30
40
50
60
70
tf
100
80
0
10
C o llector Current : I C [A]
20
30
40
50
60
70
80
C o llector Current : I C [A]
Reverse Recovery Characteristics
Forward Voltage vs. Forward Current
t rr, I rr vs. I F
100
[A]
t rr=125°C
100
70
60
50
40
30
20
10
Reverse Recovery Time : t
rr
[ns]
80
25°C
rr
T j =125°C
Reverse Recovery Current : I
Forward Current : I
F
[A]
90
t rr =25°C
I rr=125°C
I rr=125°C
10
0
0
1
2
Forward Voltage : V F [V]
3
4
0
10
20
30
40
50
60
Forward Current : I F [A]
70
80
IGBT IPM
600V
6×50A
6MBP 50RA-060
n Inverter
Reverse Biased Safe Operating Area
Transient Thermal Resistance
V C C =15V, T j<125°C
500
SCSOA
Thermal Resistance : Rth(j-c) [°C/W]
450
400
1
[A]
10
(non-repetitive pulse)
C
350
0
IGBT
10
300
Collector Current : I
FWD
10
-1
250
200
150
100
RBSOA
50
10
0
-2
10
(repetitive pulse)
-3
10
-2
10
-1
10
0
0
100
Pulse W idth : P W [sec]
200
[W]
[W]
Collector Power Dissipation : P
100
50
0
60
80
100
120
140
60
40
20
0
160
0
20
80
100
120
Switching Loss vs. Collector Current
S w itching Loss vs. Collector Current
, E off , E rr [mJ/cycle]
on
E on
4
3
Switching Loss : E
on
E off
2
1
E rr
0
10
60
Case Temperature : T C (°C )
20
30
40
50
60
Collector Current : I C [A]
70
80
140
160
70
80
V D C =300V, V C C =15V, T j=125°C
7
0
40
Case Temperature : T C (°C )
V D C =300V, V C C =15V, T j=25°C
5
, E off , E rr [mJ/cycle]
40
700
80
C
C
Collector Power Dissipation : P
150
20
600
(per device)
100
0
500
Power Derating For FWD
(per device)
200
400
C o llector-Em itter Voltage : V CE [V]
Power Derating For IGBT
Switching Loss : E
300
E on
6
5
4
E off
3
2
E rr
1
0
0
10
20
30
40
50
60
6MBP 50RA-060
IGBT IPM
600V
6×50A
n Inverter
V cc =15 V
120
oc
[A]
Over Current Protection vs. Junction Temperature
Over Current Protection Level : I
100
80
60
40
20
0
0
20
40
60
80
100
120
140
Junction Temperature: T j [°C ]
n Outline Drawing
Weight: 440g
Specification is subject to change without notice
March 98