IGBT IPM 600V 6×50A 6MBP 50RA-060 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous Collector 1ms Current Duty=62.6% Collector Power Dissipation One Transistor Voltage of Power Supply for Driver Input Signal Voltage Input Signal Current Alarm Signal Voltage Alarm Signal Current Junction Temperature Operating Temperature Storage Temperature Isolation Voltage A.C. 1min. Screw Torque ( Tc=25°C) Symbols VDC VDC(Surge) VSC VCES IC ICP -IC PC VCC VIN IIN VALM IALM Tj TOP Tstg Viso Mounting *1 Terminals *1 Ratings Max. 450 500 400 600 50 100 50 198 0 20 0 VZ 1 0 VCC 15 150 -20 100 -40 125 2500 3.5 3.5 n Outline Drawing Units Min. 0 0 200 0 V A W V mA V mA °C V Nm Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5) • Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V ) INV Items Collector Current At Off Signal Input Collector-Emitter Saturation Voltage Forward Voltage of FWD Symbols ICES VCE(Sat) VF Conditions VCE=600V, Input Terminal Open IC=50A -IC=50A Min. Typ. Max. 1.0 2.8 3.0 Units mA V V Min. 3 10 1.00 1.25 Typ. Max. 18 65 1.70 1.95 Units • Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V ) Items Current of P-Line Side Driver (One Unit) Current of N-Line Side Driver (Three Units) Symbols ICCP ICCN Input Signal Threshold Voltage VIN(th) Input Zener Voltage Over Heating Protection Temperature Level Hysteresis IGBT Chips Over Heating Protec. Temp. Level Hysteresis Inverter Collector Current Protection Level Over Current Detecting Time Alarm Signal Hold Time Limiting Resistor for Alarm Under Voltage Protection Level Hysteresis VZ TCOH TCH TjOH TjH IOC tDOC tALM RALM VUV VH Conditions fSW=0~15kHz, TC=-20~100°C fSW=0~15kHz, TC=-20~100°C On Off RIN=20kΩ VDC=0V, IC=0A, Case Temp. 1.35 1.60 8.0 110 150 Tj=125°C Tj=25°C 75 V 125 20 Surface Of IGBT Chip mA °C 20 1.5 1425 11.0 0.2 10 2 1500 1575 12.5 A µs ms Ω V • Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V ) Items Switching Time Symbols tON tOFF tRR Conditions IC=50A, VDC=300V Min. 0.3 Typ. IF=50A, VDC=300V Max. Units 3.6 0.4 µs Max. 0.63 1.33 Units • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Conditions Inverter IGBT Diode With Thermal Compound Min. Typ. 0.05 °C/W 6MBP 50RA-060 n Equivalent Circuit Drivers include following functions À Short circuit protection circuit Á Amplifier for driver  Undervoltage protection circuit à Overcurrent protection circuit Ä IGBT Chip overheating protection IGBT IPM 600V 6×50A IGBT IPM 600V 6×50A 6MBP 50RA-060 n Control Circuit Input Signal Threshold Voltage Power Supply Current vs. Switching Frequency vs. Power Supply Voltage T j=100°C 2,5 T j=25°C V C C =15V Input Signal Threshold Voltage V C C =13V Power Supply Current : I 20 15 10 V C C =17V P-Side V C C =15V 5 T j =125°C 2,0 : V in(on) , V in(off) [V] N -Side CC [mA] V C C =17V 25 V in(off) 1,5 V in(on) 1,0 0,5 V C C =13V 0 5 10 15 20 0,0 12 25 13 S w itching Frequency : fsw [kHz] 14 17 18 19 [V] H Under Voltage Hysterisis : V 10 UV [V] 16 1,0 12 Under Voltage : V 15 Under Voltage Hysterisis vs. Junction Temperature Under Voltage vs. Junction Temperature 8 6 4 2 0 20 14 Power Supply Voltage : V cc [V] 40 60 80 100 120 0,8 0,6 0,4 0,2 0,0 20 140 40 Junction Temperature : T j [°C] 60 80 100 120 140 Junction Temperature: T j [°C] Alarm Hold Time vs. Power Supply Voltage Over Heating Characteristics T c O H , T jOH , T c H , T jH vs. V cc 3,0 , T jOH [°C] 2,0 T j=25°C 1,5 1,0 0,5 0,0 12 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 , T jH [°C] cH cOH T j=125°C Over Heating Hysterisis : T 2,5 Over Heating Protection : T Alarm Hold Timen : t ALM [ms] 200 T jOH 150 T cOH 100 50 T c H ,T jH 0 12 13 14 15 16 Power Supply Voltage : V cc [V] 17 18 IGBT IPM 600V 6×50A 6MBP 50RA-060 n Inverter C o llector Current vs. Collector-Emitter Voltage C o llector Current vs. Collector-Emitter Voltage T j=25°C 100 V C C =17V,15V, 13V [A] C 60 40 20 60 40 20 0 0 1 2 3 0 4 1 2 3 C o llector-Em itter Voltage : V C E [V] S w itching Time vs. Collector Current S w itching Time vs. Collector Current V D C =300V, V C C =15V, T j=25°C V D C =300V, V C C =15V, T j=125°C , t r, t off , t f [ns] C o llector-Emitter Voltage : V C E [V] t on t off 4 t off t on 1000 Switching Time : t on 1000 on , t r, t off , t f [ns] 0 Switching Time : t V C C =17V,15V, 13V 80 Collector Current : I Collector Current : I C [A] 80 T j=125°C 100 tf 100 0 10 20 30 40 50 60 70 tf 100 80 0 10 C o llector Current : I C [A] 20 30 40 50 60 70 80 C o llector Current : I C [A] Reverse Recovery Characteristics Forward Voltage vs. Forward Current t rr, I rr vs. I F 100 [A] t rr=125°C 100 70 60 50 40 30 20 10 Reverse Recovery Time : t rr [ns] 80 25°C rr T j =125°C Reverse Recovery Current : I Forward Current : I F [A] 90 t rr =25°C I rr=125°C I rr=125°C 10 0 0 1 2 Forward Voltage : V F [V] 3 4 0 10 20 30 40 50 60 Forward Current : I F [A] 70 80 IGBT IPM 600V 6×50A 6MBP 50RA-060 n Inverter Reverse Biased Safe Operating Area Transient Thermal Resistance V C C =15V, T j<125°C 500 SCSOA Thermal Resistance : Rth(j-c) [°C/W] 450 400 1 [A] 10 (non-repetitive pulse) C 350 0 IGBT 10 300 Collector Current : I FWD 10 -1 250 200 150 100 RBSOA 50 10 0 -2 10 (repetitive pulse) -3 10 -2 10 -1 10 0 0 100 Pulse W idth : P W [sec] 200 [W] [W] Collector Power Dissipation : P 100 50 0 60 80 100 120 140 60 40 20 0 160 0 20 80 100 120 Switching Loss vs. Collector Current S w itching Loss vs. Collector Current , E off , E rr [mJ/cycle] on E on 4 3 Switching Loss : E on E off 2 1 E rr 0 10 60 Case Temperature : T C (°C ) 20 30 40 50 60 Collector Current : I C [A] 70 80 140 160 70 80 V D C =300V, V C C =15V, T j=125°C 7 0 40 Case Temperature : T C (°C ) V D C =300V, V C C =15V, T j=25°C 5 , E off , E rr [mJ/cycle] 40 700 80 C C Collector Power Dissipation : P 150 20 600 (per device) 100 0 500 Power Derating For FWD (per device) 200 400 C o llector-Em itter Voltage : V CE [V] Power Derating For IGBT Switching Loss : E 300 E on 6 5 4 E off 3 2 E rr 1 0 0 10 20 30 40 50 60 6MBP 50RA-060 IGBT IPM 600V 6×50A n Inverter V cc =15 V 120 oc [A] Over Current Protection vs. Junction Temperature Over Current Protection Level : I 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Junction Temperature: T j [°C ] n Outline Drawing Weight: 440g Specification is subject to change without notice March 98