HITACHI 2SC5080

2SC5080
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 13.5 GHz Typ
• High gain, low noise figure
PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3
1
4
1. Collector
2. Emitter
3. Base
4. Emitter
2SC5080
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
8
V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15
—
—
V
I C = 10 µA, IE = 0
Collector cutoff current
I CBO
—
—
1
µA
VCB = 12 V, IE = 0
I CEO
—
—
1
mA
VCE = 8 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
50
90
160
Collector output capacitance
Cob
—
0.4
0.75
pF
VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
10.5
13.5
—
GHz
VCE = 5 V, IC = 20 mA
Power gain
PG
15
18
—
dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.1
2.0
dB
VCE = 5 V, IC = 5 mA,
f = 900 MHz
VCE = 5 V, IC = 20 mA
Note: Marking is “ZD–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
2SC5080
DC Current Transfer Ratio vs.
Collector Current
200
DC Current Transfer Ratio h FE
150
VCE = 5V
160
100
120
50
50
100
Ambient Temperature Ta (°C)
0
80
40
0
0.1
150
Collector Output Capacitance Cob (pF)
20
16
VCE = 5V
12
VCE = 1V
8
4
0
1
2
5
10
20
Collector Current I C (mA)
1
10
Collector Current I C (mA)
100
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
Gain Bandwidth Product f T (GHz)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
50
5
IE = 0
f = 1 MHz
2
1
0.5
0.2
0.1
0.1 0.2 0.5 1
2
5
10 20
Collector to Base Voltage V CB (V)
3
2SC5080
Power Gain vs. Collector Current
Noise Figure vs. Collector Current
20
VCE = 5V
5
f = 900 MHz
VCE = 5V
NF (dB)
Power Gain PG (dB)
16
f = 2 GHz
Noise Figure
12
8
4
0
4
3
2
f = 2GHz
1
f = 900MHz
0
1
2
5
10
20
Collector Current I C (mA)
50
1
S21 Parameter vs. Collector Current
S21 Parameter vs. Collector Current
16
12
|S 21 | 2 (dB)
VCE = 1V
f = 1 GHz
f = 2 GHz
S 21 parameter
|S 21 | 2 (dB)
S 21 parameter
50
20
20
8
4
0
VCE = 5V
f = 1 GHz
16
f = 2 GHz
12
8
4
0
1
4
5
10
20
2
Collector Current I C (mA)
2
5
10
20
Collector Current I C (mA)
50
1
2
5
10
20
Collector Current I C (mA)
50
2SC5080
S11 Parameter vs. Frequency
.8
1
.6
S21 Parameter vs. Frequency
Scale: 5 / div.
90°
1.5
60°
120°
2
.4
3
4
5
.2
30°
150°
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.04 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
–2
–.6
–.8
–1
–1.5
Condition: V CE = 5 V , Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(I C = 5 mA)
(I C = 20 mA)
5
2SC5080
S Parameters (VCE = 5 V, IC = 5 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.798
–30.8
11.47
157.3
0.0329
73.0
0.936
–20.0
400
0.699
–60.8
9.88
139.6
0.0570
60.8
0.820
–35.1
600
0.592
–83.0
8.35
126.1
0.0718
53.0
0.703
–46.0
800
0.532
–99.9
7.03
115.7
0.0817
48.0
0.607
–54.0
1000
0.465
–114.5
6.02
107.6
0.0891
45.4
0.532
–59.8
1200
0.432
–128.2
5.23
101.0
0.0939
44.6
0.478
–64.3
1400
0.401
–139.6
4.58
95.2
0.0993
44.1
0.440
–67.7
1600
0.390
–150.2
4.14
90.7
0.103
44.8
0.405
–71.6
1800
0.373
–160.5
3.76
86.4
0.108
45.1
0.382
–74.7
2000
0.373
–168.3
3.42
82.6
0.112
46.5
0.362
–77.9
S Parameters (VCE = 5 V, IC = 20 mA, ZO = 50 Ω)
Freq.
S11
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.588
–53.1
21.24
144.3
0.0275
66.3
0.826
–31.8
400
0.482
–89.8
15.59
123.6
0.0423
56.6
0.619
–49.8
600
0.419
–115.9
11.75
111.0
0.0507
53.9
0.480
–58.7
800
0.389
–134.1
9.29
102.4
0.0581
54.5
0.395
–63.8
1000
0.366
–149.7
7.64
96.5
0.0652
55.8
0.337
–67.6
1200
0.365
–161.9
6.47
91.4
0.0726
57.3
0.300
–70.1
1400
0.354
–171.4
5.63
97.1
0.0806
58.7
0.274
–72.8
1600
0.356
–179.7
4.98
83.5
0.0877
60.4
0.255
–74.6
1800
0.361
172.7
4.48
79.9
0.0959
61.2
0.242
–77.1
2000
0.365
165.3
4.06
77.0
0.105
62.4
0.232
–79.9
6
S21
S12
S22
Unit: mm
0.95
0 – 0.1
0.65
0.1
0.6 +– 0.05
0.16 – 0.06
2.8
1.5 ± 0.15
+ 0.1
0.4 – 0.05
+ 0.1
0.65
+ 0.1
0.4 – 0.05
0.4 – 0.05
+ 0.2
– 0.6
+ 0.1
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
0.85
1.1 – 0.1
+ 0.2
0.3
1.8 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK-4
—
Conforms
0.013 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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URL
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: http://www.hitachi.co.jp/Sicd/indx.htm
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