2SC4499(L)/(S) Silicon NPN Triple Diffused Application High speed and high voltage switching Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SC4499(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Collector current IC 0.5 A Collector peak current I C(peak) 1.0 A Collector power dissipation PC 0.75 W PC * 1 10 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter sustain voltage VCEO(sus) 400 — — V I C = 0.1 A, RBE = ∞ L = 100 mH Emitter to base breakdown voltage V(BR)EBO 10 — — V I E = 10 mA, IC = 0 Collector cutoff current I CBO — — 20 µA VCB = 400 V, IE = 0 I CEO — — 50 VCE = 350 V, RBE = ∞ hFE1 12 — — VCE = 5 V, IC = 0.25 A*1 hFE2 5 — — VCE = 5 V, IC = 0.5 A*1 Collector to emitter saturation voltage VCE(sat) — — 1.0 V I C = 0.25 A, IB = 0.05 A*1 Base to emitter saturation voltage VBE(sat) — — 1.5 V I C = 0.25 A, IB = 0.05 A*1 Turn on time t on — — 1.0 µs I C = 0.5 A, IB1 = –IB2 = 0.1 A, Storage time t stg — — 2.0 µs VCC ≅ 150 V Fall time tf — — 1.0 µs DC current transfer ratio Note: 2 1. Pulse test. 2SC4499(L)/(S) Maximum Collector Dissipation Curve Area of Safe Operation Collector current IC (A) 10 8 4 1.0 0.1 Ta = 25°C, 1 Shot 0.01 µs 25 s µ ) s 50 ms 5°C 0µ =2 25 =1 (T C PW tio n era Op DC Collector power dissipation PC (W) 12 0.001 0 50 100 Case temperature TC (°C) 1 150 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) Transient Thermal Resistance 10 Collector Current Derating Rate 80 IS /B 60 Thermal resistance θj-c (°C/W) Collector current derating rate (%) 100 Lim it A re a 40 20 0 50 100 Case temperature TC (°C) 150 10 ms–10 s 3 1.0 s 0m s–1 10 µ 0.3 0.1 0.03 TC = 25°C 0.01 0.01 0.1 0.01 0.1 1.0 10 (s) 1.0 10 (ms) Time t 3 2SC4499(L)/(S) Collector to Emitter Voltage vs. Base to Emitter Resistance Reverse Bias Area of Safe Operation 350 V, 1 A 0.8 0.6 400 V, 0.5 A 0.4 0.2 IB2 = –0.1 A 450 V, 0.1 A 200 300 400 500 100 Collector to emitter voltage VCE (V) 0 600 Collector to emitter voltage VCER (V) Collector current IC (A) 1.0 IC = 1 mA 500 400 300 100 Typical Output Characteristics Typical Transfer Characteristics 0.4 0.3 0.2 1.0 Collector current IC (A) Collector current IC (A) 0.5 50 40 30 20 10 5 mA 0.1 TC = 25°C 10 k 100 k 1M 1k Base to emitter resistance RBE (Ω) VCE = 5 V Ta = 25°C 0.8 0.6 0.4 0.2 IB = 0 0 4 1 2 3 4 5 Collector to emitter voltage VCE (V) 0 1.2 1.6 2.0 0.4 0.8 Base to emitter voltage VBE (V) 2SC4499(L)/(S) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Base Current Collector to emitter saturation voltage VCE(sat) (V) DC current transfer ratio hFE 100 30 10 3 VCE = 5 V Ta = 25°C 1.0 3 1.0 0.2 A 0.3 0.1 A 0.1 IC = 0.05 A 0.03 Ta = 25°C 0.01 0.001 0.003 0.01 0.03 0.1 0.3 1.0 Base current IB (A) Switching Time vs. Collector Current Saturation Voltage vs. Collector Current 10 10 IC = 5 IB 1.0 VBE(sat) 0.3 0.1 0.03 tstg 3 3 Switching time t (µs) Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) 1 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 10 VCE(sat) tf 0.3 0.1 0.03 Ta = 25°C 0.01 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1.0 1.0 ton VCC = 150 V IC = 5 IB1 = –5 IB2 0.01 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1.0 5 2SC4499(L)/(S) Switching Time vs. Case Temperature 5 Switching time t (µs) 3 tstg 1.0 tf ton 0.3 IC = 0.5 A IB1 = – IB2 = 0.1 A RL = 300 Ω VCC = 150 V 0.1 0.05 0 6 25 50 75 100 Case temperature TC (°C) 125 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 Unit: mm 2.29 ± 0.5 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) — Conforms 0.42 g Cautions 1. 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