HITACHI 2SC4499S

2SC4499(L)/(S)
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
DPAK
4
4
1
2
3
S Type
12
3
L Type
1. Base
2. Collector
3. Emitter
4. Collector
2SC4499(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
10
V
Collector current
IC
0.5
A
Collector peak current
I C(peak)
1.0
A
Collector power dissipation
PC
0.75
W
PC *
1
10
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
VCEO(sus)
400
—
—
V
I C = 0.1 A, RBE = ∞
L = 100 mH
Emitter to base breakdown
voltage
V(BR)EBO
10
—
—
V
I E = 10 mA, IC = 0
Collector cutoff current
I CBO
—
—
20
µA
VCB = 400 V, IE = 0
I CEO
—
—
50
VCE = 350 V, RBE = ∞
hFE1
12
—
—
VCE = 5 V, IC = 0.25 A*1
hFE2
5
—
—
VCE = 5 V, IC = 0.5 A*1
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.0
V
I C = 0.25 A, IB = 0.05 A*1
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
V
I C = 0.25 A, IB = 0.05 A*1
Turn on time
t on
—
—
1.0
µs
I C = 0.5 A, IB1 = –IB2 = 0.1 A,
Storage time
t stg
—
—
2.0
µs
VCC ≅ 150 V
Fall time
tf
—
—
1.0
µs
DC current transfer ratio
Note:
2
1. Pulse test.
2SC4499(L)/(S)
Maximum Collector Dissipation Curve
Area of Safe Operation
Collector current IC (A)
10
8
4
1.0
0.1
Ta = 25°C, 1 Shot
0.01
µs
25 s
µ
)
s
50
ms
5°C
0µ
=2
25
=1
(T C
PW
tio n
era
Op
DC
Collector power dissipation PC (W)
12
0.001
0
50
100
Case temperature TC (°C)
1
150
3
10
30
100 300 1,000
Collector to emitter voltage VCE (V)
Transient Thermal Resistance
10
Collector Current Derating Rate
80
IS
/B
60
Thermal resistance θj-c (°C/W)
Collector current derating rate (%)
100
Lim
it A
re
a
40
20
0
50
100
Case temperature TC (°C)
150
10 ms–10 s
3
1.0
s
0m
s–1
10 µ
0.3
0.1
0.03
TC = 25°C
0.01
0.01
0.1
0.01
0.1
1.0
10 (s)
1.0
10 (ms)
Time t
3
2SC4499(L)/(S)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
Reverse Bias Area of Safe Operation
350 V, 1 A
0.8
0.6
400 V, 0.5 A
0.4
0.2
IB2 = –0.1 A
450 V, 0.1 A
200
300
400
500
100
Collector to emitter voltage VCE (V)
0
600
Collector to emitter voltage VCER (V)
Collector current IC (A)
1.0
IC = 1 mA
500
400
300
100
Typical Output Characteristics
Typical Transfer Characteristics
0.4
0.3
0.2
1.0
Collector current IC (A)
Collector current IC (A)
0.5
50
40
30
20
10
5 mA
0.1
TC = 25°C
10 k
100 k
1M
1k
Base to emitter resistance RBE (Ω)
VCE = 5 V
Ta = 25°C
0.8
0.6
0.4
0.2
IB = 0
0
4
1
2
3
4
5
Collector to emitter voltage VCE (V)
0
1.2
1.6
2.0
0.4
0.8
Base to emitter voltage VBE (V)
2SC4499(L)/(S)
DC Current Transfer Ratio vs.
Collector Current
Collector to Emitter Saturation
Voltage vs. Base Current
Collector to emitter saturation voltage
VCE(sat) (V)
DC current transfer ratio hFE
100
30
10
3
VCE = 5 V
Ta = 25°C
1.0
3
1.0
0.2 A
0.3
0.1 A
0.1
IC = 0.05 A
0.03
Ta = 25°C
0.01
0.001 0.003 0.01 0.03
0.1 0.3
1.0
Base current IB (A)
Switching Time vs. Collector Current
Saturation Voltage vs. Collector Current
10
10
IC = 5 IB
1.0
VBE(sat)
0.3
0.1
0.03
tstg
3
3
Switching time t (µs)
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)
1
0.001 0.003 0.01 0.03 0.1
0.3
Collector current IC (A)
10
VCE(sat)
tf
0.3
0.1
0.03
Ta = 25°C
0.01
0.001 0.003 0.01 0.03
0.1 0.3
Collector current IC (A)
1.0
1.0
ton
VCC = 150 V
IC = 5 IB1 = –5 IB2
0.01
0.001 0.003 0.01 0.03
0.1 0.3
Collector current IC (A)
1.0
5
2SC4499(L)/(S)
Switching Time vs. Case Temperature
5
Switching time t (µs)
3
tstg
1.0
tf
ton
0.3
IC = 0.5 A
IB1 = – IB2 = 0.1 A
RL = 300 Ω
VCC = 150 V
0.1
0.05
0
6
25
50
75
100
Case temperature TC (°C)
125
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
1.7 ± 0.5
Unit: mm
2.29 ± 0.5
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
3.1 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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