HITACHI 2SC1472

2SC1472(K)
Silicon NPN Epitaxial, Darlington
Application
High gain amplifier
Outline
TO-92 (1)
3
2
1. Emitter
2. Collector
3. Base
3
2
1
1
2SC1472 (K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage
VCEO
30
V
Emitter to base voltage
VEBO
10
V
Collector current
IC
300
mA
Collector peak current
iC(peak)
500
mA
Collector power dissipation
PC
500
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
2
2SC1472 (K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
30
—
—
V
I C = 1 mA, RBE = ∞
Collector cutoff current
I CBO
—
—
100
nA
VCB = 30 V, IE = 0
Emitter cutoff current
I EBO
nA
VEB = 10 V, IC = 0
—
—
100
hFE1*
1
2000
—
100000
I C = 10 mA, VCE = 5 V
hFE2*
1
3000
—
—
I C = 100 mA, VCE = 5 V
(Pulse Test)
hFE3* 1
3000
—
—
I C = 400 mA, VCE = 5 V
(Pulse Test)
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
I C = 100 mA, IB = 0.1 mA
Base to emitter voltage
VBE(sat)
—
—
2.0
V
I C = 100 mA, IB = 0.1 mA
Gain bandwidth product
fT
50
—
—
MHz
VCE = 5 V, IC = 10 mA
Collector output capacitance
Cob
—
—
10
pF
VCB = 10 V, IE = 0, f = 1 MHz
Turn on time
t on
—
60
—
ns
VCC = 11 V
I C = 100 IB1 = 100 mA
I B2 = –IB1
Turn off time
t off
—
800
—
ns
Storage time
t stg
—
350
—
ns
DC current transfer ratio
Note:
1. The 2SC1472(K) is grouped by h FE as follows.
A
B
hFE1
2000 to 100000 5000 to 100000
hFE2
3000 min
10000 min
hFE3
3000 min
10000 min
Response Waveform
Switching Time Test Circuit
CRT
D.U.T.
6k
P.G.
tr, tf ≤ 15 ns
PW ≥ 10 µs
duty ratio ≤ 10%
50
–6 V
100
6k
0.002
0.002
– +
50
– +
50
11 V
Unit R : Ω
C : µF
13 V
Input
0
Output
0
90%
10%
90%
90%
10%
td
ton
10%
tstg
toff
3
2SC1472 (K)
Typical Output Characteristics
400
200
35
30
25
500
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
600
12
10
400
8
300
6
200
4
100
2 µA
50
100
150
Ambient Temperature Ta (°C)
0
W
2.0
4.0
6.0
8.0
10
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
160
0
5. 5
4. 0
4.
Pulse
3.5
120
80
3.0
2.5
2.0
40
0
1.5
1.0
PC = 500
0.5 µA
mW
IB = 0
10
20
30
40
50
Collector to Emitter Voltage VCE (V)
Collector Cutoff Current ICEO (nA)
200
Collector Current IC (mA)
PC = 50
0m
IB = 0
0
4
20 8
1 6
1 4
1
Collector Cutoff Current vs.
Collector to Emitter Voltage
10,000
100
RBE = ∞
1,000
75
100
10
50
1.0
0.1
TC = 25°C
0.01
0
10
20
30
Collector to Emitter Voltage VCE (V)
2SC1472 (K)
Collector to Emitter Saturation
Voltage vs. Collector Current
Collector to Emitter Saturation Voltage
VCE (sat) (V)
80
VCE = 5 V
Pulse
70
60
10
0°
5075 C
50
40
Ta
=
DC Current Transfer Ratio hFE (×103)
DC Current Transfer Ratio vs.
Collector Current
30
20
25
0
10
–25
–50
0
2.0
0.8
0.7
0.6
0.5
1.6
20 50 100 200 IC = 500 mA
1.2
0.8
0.4
Pulse
0.4
0.3
2
5 10 20
50 100 200 500
Collector Current IC (mA)
Base to Emitter Saturation
Voltage vs. Collector Current
2.0
Base to Emitter Saturation Voltage
VBE (sat) (V)
2.0
0°C
Ta = –5
–25
0
25
50
75
100
0.9
1
2.4
Ta = 25°C
Pulse
IC = 1,000 IB
1.0
5.0 10 20
50 100 200 500
Collector Current IC (mA)
Collector to Emitter Saturation
Voltage vs. Base Current
Collector to Emitter Saturation Voltage
VCE (sat) (V)
1.1
IC = 1,000 IB
1.8
Pulse
Ta = –50°C
–25
0
25
50
75
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
1
3
10
30
100 300 1,000
Base Current IB (µA)
1
2
5 10 20
50 100 200
Collector Current IC (mA)
500
5
2SC1472 (K)
Switching Time vs. Collector Current
30
IC = 100 IB1 = –100 IB2
VCC = 10.5 V
f = 1 MHz
8
10
6 C (I = 0)
ib C
Cob(IE = 0)
4
2
Switching Time t (µs)
Collector Output Capacitance Cob (pF)
Emitter Input Capacitance Cib (pF)
Input and Output Capacitance vs. Voltage
10
toff
3
1.0
tstg
0.3
td
0.1
0
0.1
0.3
1.0
3
10
30
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
0.03
0.3
ton
1.0
3
10 30
100 300
Base Current IC (mA)
Response Waveform
Switching Time Test Circuit
CRT
D.U.T.
13 V
Input
0
P.G.
tr, tf ≤ 15 ns
PW ≥ 10 µs
duty ratio ≤ 10%
6
50
–6 V
0.002
– +
50
0.002
– +
50
Unit R : Ω Output
C : µF
0
10.5 V
90%
10%
90%
90%
10%
td
ton
10%
tstg
toff
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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