HITACHI 2SA1810

2SA1810
Silicon PNP Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics
fT = 300 MHz typ
• High voltage and low output capacitance
VCEO = –200 V, Cob = 5.0 pF typ
• Suitable for wide band video amplifier
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
2SA1810
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–200
V
Collector to emitter voltage
VCEO
–200
V
Emitter to base voltage
VEBO
–5
V
Collector current
IC
–0.2
A
Collector peak current
I C(peak)
–0.5
A
Collector power dissipation
PC
1.25
W
PC *
1
10
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–200
—
—
V
I C = –10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–200
—
—
V
I C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–5
—
—
V
I E = –10 µA, IC = 0
Collector cutoff current
I CBO
—
—
–10
µA
VCB = –160 V, IE = 0
60
—
200
1
DC current transfer ratio
hFE*
Base to emitter voltage
VBE
—
—
–1.0
V
VCE = –5 V, IC = –30 mA
Collector to emitter saturation
voltage
VCE(sat)
—
—
–1.0
V
I C = –30 mA, IB = –3 mA
Gain bandwidth product
fT
200
300
—
MHz
VCE = –20 V, IC = –30 mA
Collector output capacitance
Cob
—
5.0
—
pF
VCB = –30 V, IE = 0, f = 1 MHz
Note:
1. The 2SA1810 is grouped by hFE as follows.
B
C
60 to 120
100 to 200
2
VCE = –5 V, IC = –10 mA
2SA1810
Maximum Collector Dissipation Curve
Area of Safe Operation
–1.0
1 Shot pulse
Ta = 25°C
Collector Current IC (A)
–0.5
8
4
–0.2
ms
10
n
=
tio
PW
era
Op 5°C)
DC = 2
(T C
Collector power dissipation Pc (W)
12
–0.1
–0.05
–0.02
0
50
100
Case Temperature TC (°C)
150
–0.01
–10
–20
–50 –100 –200 –500 –1000
Collector to emitter Voltage VCE (V)
Typical Output Characteristics
–80
–0.2 mA
–40
IB = 0
–2
–4
–6
–8
–10
Collector to emitter Voltage VCE (V)
DC current transfer ratio hFE
0
–2. .6
8
–1
.
–11.4 –1.2.8
– .0 –0
–1 –0.6
–0.4
0
1,000
W
Collector Current IC (mA)
.25
–120
TC = 25°C
=1
–160
DC Current Transfer Ratio vs.
Collector Current
Pc
–200
VCE = –5 V
Pulse
500
TC = 75°C
25°C
–25°C
200
100
50
20
10
–1
–2
–5 –10 –20 –50 –100–200
Collector current IC (mA)
3
2SA1810
Collector to Emitter Saturation Voltage vs.
Collector Current
–2
–1.0
–0.5
TC = 75°C
–0.2
25°C
–50
–20
–10
–5
–2
–0.1
–25°C
–0.05
–1
–2
25°C
–25°C
Collector current IC (mA)
Collector to emitter saturation voltage
VCE (sat) (V)
lC = 10 lB
Pulse
–5
TC = 75°C
Typical Transfer Characteristics
–200
VCE = –5 V
–100 Pulse
–10
–1
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
–5 –10 –20 –50 –100–200
Collector current IC (mA)
Gain bandwidth product fT (MHz)
Gain Bandwidth Product vs.
Collector Current
4
1,000
VCE = –20 V
Pulse
500
200
100
50
20
10
–1
–2
–5 –10 –20 –50 –100–200
Collector current IC (mA)
Collector output capacitance Cob (pF)
Collector Output Capacitance
Collector to Base Voltage
100
IE = 0 f = 1 MHz
50
20
10
5
2
1
–1
–2
–5 –10 –20
–50 –100
Collector to base voltage VCB (V)
Unit: mm
2.7 ± 0.4
120°
3.7 ± 0.7
11.0 ± 0.5
12
0°
2.3 ± 0.3
φ 3.1 +0.15
–0.1
12
0°
8.0 ± 0.5
15.6 ± 0.5
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-126 Mod
—
—
0.67 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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