2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SA1810 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –200 V Collector to emitter voltage VCEO –200 V Emitter to base voltage VEBO –5 V Collector current IC –0.2 A Collector peak current I C(peak) –0.5 A Collector power dissipation PC 1.25 W PC * 1 10 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –200 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –200 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –10 µA VCB = –160 V, IE = 0 60 — 200 1 DC current transfer ratio hFE* Base to emitter voltage VBE — — –1.0 V VCE = –5 V, IC = –30 mA Collector to emitter saturation voltage VCE(sat) — — –1.0 V I C = –30 mA, IB = –3 mA Gain bandwidth product fT 200 300 — MHz VCE = –20 V, IC = –30 mA Collector output capacitance Cob — 5.0 — pF VCB = –30 V, IE = 0, f = 1 MHz Note: 1. The 2SA1810 is grouped by hFE as follows. B C 60 to 120 100 to 200 2 VCE = –5 V, IC = –10 mA 2SA1810 Maximum Collector Dissipation Curve Area of Safe Operation –1.0 1 Shot pulse Ta = 25°C Collector Current IC (A) –0.5 8 4 –0.2 ms 10 n = tio PW era Op 5°C) DC = 2 (T C Collector power dissipation Pc (W) 12 –0.1 –0.05 –0.02 0 50 100 Case Temperature TC (°C) 150 –0.01 –10 –20 –50 –100 –200 –500 –1000 Collector to emitter Voltage VCE (V) Typical Output Characteristics –80 –0.2 mA –40 IB = 0 –2 –4 –6 –8 –10 Collector to emitter Voltage VCE (V) DC current transfer ratio hFE 0 –2. .6 8 –1 . –11.4 –1.2.8 – .0 –0 –1 –0.6 –0.4 0 1,000 W Collector Current IC (mA) .25 –120 TC = 25°C =1 –160 DC Current Transfer Ratio vs. Collector Current Pc –200 VCE = –5 V Pulse 500 TC = 75°C 25°C –25°C 200 100 50 20 10 –1 –2 –5 –10 –20 –50 –100–200 Collector current IC (mA) 3 2SA1810 Collector to Emitter Saturation Voltage vs. Collector Current –2 –1.0 –0.5 TC = 75°C –0.2 25°C –50 –20 –10 –5 –2 –0.1 –25°C –0.05 –1 –2 25°C –25°C Collector current IC (mA) Collector to emitter saturation voltage VCE (sat) (V) lC = 10 lB Pulse –5 TC = 75°C Typical Transfer Characteristics –200 VCE = –5 V –100 Pulse –10 –1 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 Base to emitter voltage VBE (V) –5 –10 –20 –50 –100–200 Collector current IC (mA) Gain bandwidth product fT (MHz) Gain Bandwidth Product vs. Collector Current 4 1,000 VCE = –20 V Pulse 500 200 100 50 20 10 –1 –2 –5 –10 –20 –50 –100–200 Collector current IC (mA) Collector output capacitance Cob (pF) Collector Output Capacitance Collector to Base Voltage 100 IE = 0 f = 1 MHz 50 20 10 5 2 1 –1 –2 –5 –10 –20 –50 –100 Collector to base voltage VCB (V) Unit: mm 2.7 ± 0.4 120° 3.7 ± 0.7 11.0 ± 0.5 12 0° 2.3 ± 0.3 φ 3.1 +0.15 –0.1 12 0° 8.0 ± 0.5 15.6 ± 0.5 1.1 0.8 2.29 ± 0.5 2.29 ± 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod — — 0.67 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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