2SC5390 Silicon NPN Epitaxial High Frequency Amplifier ADE-208-492 (Z) 1st. Edition December. 1996 Features • Excellent high frequency characteristics fT = 1.4GHz (typ.) • Low output capacitance C ob = 2.4 pF (typ.) • Isolated package TO–126FM Outline TO–126FM 12 3 1. Emitter 2. Collector 3. Base 2SC5390 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage VCEO 110 V Emitter to base voltage VEBO 3 V Collector current IC 200 mA Collector peak current ic(peak) 400 mA Collector power dissipation PC 1.4 W 7 W 1 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 110 — — V I C = 10É A, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 110 — — V I C = 1mA, RBE = ∞ Collector cutoff current I CBO — — 10 µA VCB = 100V, IE = 0 Emitter cutoff current I EBO — — 10 µA VE B = 3V, IC = 0 DC current transfer ratio hFE 30 — 100 Base to emitter voltage VBE — — 1 V VCE = 10 V, IC = 10mA Collector to emitter saturation VCE(sat) voltage — — 1 V I C = 200mA, IB = 20mA Gain bandwidth product 1.0 1.4 — GHz VCE = 10 V, IC = 50mA — 2.4 3.5 pF VCB = 30V, IE = 0 f = 1MHz fT Collector Output capacitance Cob VCE = 10 V, IC = 10mA 2SC5390 Main Characteristics Areaof Safe Operaion 1000 I C (mA) 8 6 Collector Current Tc 4 2 Ta ic(peak) 300 I max C 100 30 3 1 shot pulse Ta = 25 °C 50 100 150 200 Ambient Temperature Ta (°C) Case Temperature Tc (°C) 1 h FE DC Current Transfer Ratio I C (mA) Collector Current 500 mA A 10 9 mmAA 8 m A 7 m 6 mA 5 A 4m A m 3 A 2m 100 1 mA Ta = 25 °C Pulse Test 0 3 10 30 100 300 1000 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 200 10 ms 10 1 0 PW = 1 ms n tio era ) Op 5°C DC c = 2 (T Collector Power Dissipation Pc (W) Collector Power Dissipation vs. Temperature IB = 0 5 200 25 °C 50 Ta = –25 °C 20 10 V CE = 10 V Pulse Test 5 10 Collector to Emitter Voltage VCE (V) 75 °C 100 1 2 5 10 20 50 100 200 Collector Current IC (mA) 2SC5390 Base to Emitter Saturation Voltage vs. Collector Current 5 1 I C / I B = 10 Pulse Test 0.5 0.2 Ta = –25 °C 25 °C 0.1 Base to Emitter Saturation Voltage V BE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current I C / I B = 10 Pulse Test 2 Ta = –25 °C 1 0.5 0.05 75 °C 0.2 0.02 0.1 0.01 1 5 2 10 1 50 100 200 20 Gain Bandwidth vs. Collector Current 5 2 1 0.5 0.2 VCE = 10 V Pulse Test 0.1 1 2 5 10 20 Collector Current IC 50 100 200 (mA) Collector Output Capacintace Cob (pF) Collector Current IC (mA) Gain Bandwidth f T (MHz) 25 °C 75 °C 2 5 10 20 50 100 200 Collector Current IC (mA) Collctor Output Capacitance vs. Collector to Base Voltage 10 5 2 1 0.5 0.2 I E = 0 , f = 1MHz 0.1 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) 2SC5390 Package Dimentions φ 3.2 +0.15 –0.1 8.0 ± 0.4 6.0 3.2 ± 0.4 1.9 Max 11.0 ± 0.5 3.5 1.0 Unit: mm 15.6 ± 0.5 1.7 0.65 2.29 ± 0.5 0.7 2.29 ± 0.5 Hitachi Code TO–126FM — EIAJ — JEDEC Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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