HITACHI 2SK2373

2SK2373
Silicon N-Channel MOS FET
ADE-208-268
1st. Edition
Application
Low frequency power switching
Features
•
•
•
•
•
Low on-resistance
Small package
Low drive current
4 V gate drive device can be driven from 5 V source.
Suitable for low signal load switch
Outline
MPAK
3
1
2
D
1. Source
2. Gate
3. Drain
G
S
2SK2373
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
0.2
A
0.4
A
0.2
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 %
2. Marking is “ZE–”.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
I D = 100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±2
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 10 µA, VDS = 5 V
Static drain to source on state
resistance
RDS(on)
—
1.4
2.5
Ω
I D = 20 mA
VGS = 4 V*1
—
1.0
1.4
Ω
I D = 10 mA
VGS = 10 V*1
Input capacitance
Ciss
—
17.8
—
pF
VDS = 10 V
Output capacitance
Coss
—
25.4
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
3.7
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
50
—
ns
I D = 0.1 A
Rise time
tr
—
125
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
660
—
ns
RL = 100 Ω
Fall time
tf
—
400
—
ns
PW = 2 µs
Note
2
1. Pulse Test
1
I D (A)
1 ms
100
50
0.3
0.1
0.03
0.01
Operation in
this area is
limited by R DS(on)
0.003
0.001
50
100
Ambient Temperature
150
200
0.1
Ta (°C)
Typical Output Characteristics
5V
4V
0.8
3.5 V
3V
VGS = 2.5 V
2
4
6
Drain to Source Voltage
8
10
V DS (V)
Drain Current
4.5 V
1.2
ID
(A)
1.6
0
1
0.3
3
10
30
100
Drain to Source Voltage V DS (V)
0.5
Pulse Test
0.4
Ta = 25 °C
1 shot pulse
Typical Transfer Characteristics
2.0
I D (A)
n
tio
ra
pe
O
Drain Current
150
0
Drain Current
Maximum Safe Operation Area
C
D
Channel Power Dissipation
Maximum Channel Dissipation Curve
200
=
s
PW0 m
1
Pch (mW)
2SK2373
0.4
V DS = 10 V
0.3
75 °C
0.2
25 °C
Ta = –25 °C
0.1
0
1
2
3
Gate to Source Voltage
4
5
V GS (V)
3
2SK2373
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
0.4
0.3
0.2
0.2 A
0.1
0.1 A
I D = 0.05 A
1
4
8
12
Gate to Source Voltage
16
Ta = 25 °C
Pulse Test
5
2
VGS = 4 V
1
10 V
0.5
0.2
0.1
0.01 0.02
V GS (V)
Forward Transfer Admittance vs.
Drain Current
0.5
Ta = –25 °C
25 °C
75 °C
0.05
0.02
0.01
0.01 0.02
1
Typical Capacitance vs.
Drain to Source Voltage
0.2
0.1
0.05 0.1 0.2
0.5
Drain Current I D (A)
100
30
Coss
10
Ciss
3
Crss
1
0.3
V DS = 10 V
Pulse Test
VGS = 0
f = 1 MHz
0.1
0.05 0.1
0.2
Drain Current I D (A)
4
20
Capacitance C (pF)
Forward Transfer Admittance |yfs| (S)
0
Static Drain to Source on State Resistance
vs. Drain Current
10
0.5
1
0
10
20
30
40
50
Drain to Source Voltage V DS (V)
2SK2373
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
0.5
Pulse Test
0.4
0.3
0.2
10 V
V GS = 0
5V
0.1
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
5
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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