HITACHI 2SJ399

2SJ399
Silicon P-Channel MOS FET
ADE-208-267
1st. Edition
Application
Low frequency power switching
Features
•
•
•
•
•
Low on-resistance
Small package
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for low signal load switch.
Outline
MPAK
3
1
2
D
1. Source
2. Gate
3. Drain
G
S
2SJ399
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–0.2
A
–0.4
A
1
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
–0.2
A
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Marking is “ZF–”
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
–30
—
—
V
I D = –100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±2
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
–1
µA
VDS = –30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.0
V
I D = –10 µA, VDS = –5 V
Static drain to source on state
resistance
RDS(on)
—
2.7
5.0
Ω
I D = –20 mA
VGS = –4 V*1
—
2.0
3.0
Ω
I D = –10 mA
VGS = –10 V*1
Input capacitance
Ciss
—
1.1
—
pF
VDS = –10 V
Output capacitance
Coss
—
22.3
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
0.17
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
530
—
ns
I D = –0.1 A
Rise time
tr
—
2170
—
ns
VGS = –10 V
Turn-off delay time
t d(off)
—
7640
—
ns
RL = 100 Ω
Fall time
tf
—
7690
—
ns
PW = 5 µs
2
Maximum Safe Operation Area
–1
I D (A)
1 ms
100
50
–0.1
n
tio
ra
pe
O
Drain Current
150
–0.3
C
D
Channel Power Dissipation
Maximum Channel Dissipation Curve
200
=
s
PW0 m
1
Pch (mW)
2SJ399
–0.03
Operation in
this area is
limited by R DS(on)
–0.01
–0.003
Ta = 25 °C
0
50
100
150
Ambient Temperature
200
–0.001
–0.1
–0.3
–1
–3
–10
Drain to Source Voltage
Ta (°C)
Typical Output Characteristics
–30
–100
V DS (V)
Typical Transfer Characteristics
–2.0
–0.5
V DS = –10 V
(A)
–1.2
–5 V
–4.5 V
ID
–1.6
–4 V
–0.8
–3.5 V
–3 V
–0.4
Drain Current
Drain Current
I D (A)
Pulse Test
–0.4
-0.3
-0.2
–0.1
75 °C
Ta = –25 °C
25 °C
–2.5 V
VGS = –2 V
0
–2
–4
–6
Drain to Source Voltage
–8
–10
V DS (V)
0
–1
–2
–3
Gate to Source Voltage
–4
–5
V GS (V)
3
2SJ399
–0.4
–0.3
–0.2
–0.1 A
I D = –0.05 A
–0.1
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0
4
–0.2 A
–4
–8
–12
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Temperature
5
4
3
I D = –0.2 A
–0.05 A
–0.1 A
V GS = –4 V
I D = –0.2 A
2
1
0
–40
–0.1 A
–0.05 A
VGS = –10 V
Static Drain to Source on State Resistance
vs. Drain Current
100
Ta = 25 °C
50 Pulse Test
20
10
5
VGS = –4 V
2
–10 V
1
–0.01 –0.02
–16
–20
V GS (V)
–0.05 –0.1 –0.2
Drain Current
–0.5
–1
I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
–0.5
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1
0.5
Ta = –25 °C
0.2
25 °C
0.1
75 °C
0.05
0.02
V DS = –10 V
Pulse Test
0.01
0
40
80
120
160
Case Temperature Tc (°C)
–0.01 –0.02
–0.05 –0.1 –0.2
Drain Current I D (A)
–0.5
–1
2SJ399
Typical Capacitance vs.
Drain to Source Voltage
Switching Characteristics
100
10000
tf
5000
Switching Time t (ns)
Coss
20
10
5
2
Ciss
1
0.5
0.2
0.1
VGS = 0
f = 1 MHz
Crss
t d(off)
tr
2000
t d(on)
1000
500
VGS = –10 V
PW = 5 µs
200
100
0
–10
–20
–30
–40
–50
–0.1
Drain to Source Voltage V DS (V)
–0.2
–0.5
–1
–2
Drain Current I D (A)
–5
Reverse Drain Current vs.
Source to Drain Voltage
–0.5
Reverse Drain Current I DR (A)
Capacitance C (pF)
50
Pulse Test
–0.4
–10 V
–0.3
V GS = 0
–0.2
–5 V
–0.1
0
–0.4
–0.8
–1.2
Source to Drain Voltage
–1.6
–2.0
V SD (V)
5
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
3 – 0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
MPAK
—
Conforms
0.011 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.