HITACHI 2SJ587

2SJ587
Silicon P Channel MOS FET
High Speed Switching
ADE-208-801 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R DS = 8.5 Ω typ. (VGS = -4 V , I D = -25 mA)
R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA)
• 2.5 V gate drive device.
• Small package (SMPAK)
Outline
SMPAK
3
1
2
D
3
2
1. Source
2. Gate
3. Drain
G
S
1
2SJ587
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
-20
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
-50
mA
-200
mA
-50
mA
100
mW
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x 20 x0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
-20
—
—
V
I D = -100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±10
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±5
µA
VGS = ±8 V, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
-1
µA
VDS = -20 V, VGS = 0
Gate to source cutoff voltage VGS(off)
-0.8
—
-1.8
V
I D = -10µA, VDS = -5 V
Static drain to source on state RDS(on)
—
4.1
5.0
Ω
ID = -25 mA,VGS = -4 V Note 3
resistance
RDS(on)
—
6.0
8.5
Ω
ID = -10 mA,VGS = -2.5 V Note 3
Forward transfer admittance
|yfs|
32.5
50
—
mS
ID = -25 mA, V DS = -10 V Note 3
Input capacitance
Ciss
—
13
—
pF
VDS = -10 V
Output capacitance
Coss
—
10
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
1.8
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
22
—
ns
I D = -25 mA, VGS = -4 V
Rise time
tr
—
48
—
ns
RL = 400 Ω
Turn-off delay time
t d(off)
—
50
—
ns
Fall time
tf
—
60
—
ns
Note:
2
3. Pulse test
4. Marking is DP
2SJ587
Main Characteristics
Power vs.Temperature Derating
-5
Maximum Safe Operation Area
I D (A)
-2
150
Drain Current
Channel Dissipation
*Pch (mW)
200
100
50
-1.0
-0.5
-0.2
-0.1
-0.01
-0.005
50
100
150
Ambient Temperature
*Value on the alumina ceramic board.(12.5x20x0.7mm)
-6 V
-0.2
Typical Output Characteritics
-4 V
-5 V
ion
=
(1 10 m
sh s
ot
)
Ta=25 °C
-5 -10 -20
Drain to Source Voltage
Ta ( °C)
at
Operation in this area
is limited by RDS(on)
-0.0005
-0.05 -0.1 -0.2 -0.5 -1.0 -2
200
PW
Op
er
-0.02
-0.002
-0.001
0
DC
-0.05
10 µs
100 µs
1 ms
-50
VDS (V)
Value on the alumina ceramic board.(12.5x20x0.7mm)
Typical Transfer Characteristics
-0.2
I D (A)
-0.12
Drain Current
Drain Current
I D (A)
Pulse Test
-0.16
-3 V
-0.08
-0.04
-0.16
-0.12
-0.08
Tc = –25 °C
-0.04
VGS = -2V
75 °C
0
-2
-4-6
Drain to Source Voltage
-8
VDS (V)
-10
0
25 °C
-1
-2
-3
Gate to Source Voltage
V DS= -10 V
Pulse Test
-4
-5
VGS (V)
3
2.0
Pulse Test
1.6
1.2
0.8
I D = -50mA
0.4
-10m A
0
0
-2
-6
-4
-8
Static Drain to Source on State Resistance
R DS(on) ( )
Gate to Source Voltage
25
-10m A
15
-2.5V
-10m A, -25m A
VGS = -4V
5
Pulse Test
40
Case Temperature
Pulse Test
-2.5 V
20
VGS = -4 V
10
5
2
0.05
-0.01
80
Tc
120
( °C)
-0.02
Drain Current
-0.05
I D (A)
-0.1
Forward TransferAdmittance
vs. Drain Current
20
0
50
VGS (V)
I D = -25m A
0
–40
4
-10
Static Drain to Source on State
Resistance vs. Temperature
10
Static Drain to Sourceon State
Resistance vs. Drain Current
1.0
-25mA
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
V DS(on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State Resistance
R DS(on) ( )
2SJ587
160
0.5
VDS=-10V
Pulse Test
0.2
Tc = -25 °C
0.1
25 °C
0.05
75 °C
0.02
0.01
0.005
-0.01
-0.02
-0.05
Drain Current I D (A)
-0.1
2SJ587
Typical capacitance vs.
Drain to Source Voltage
100
VGS=0
f=1MHz
500
20
Ciss
10
Coss
5
2
1
Crss
0
-4
-8
-12
-16
-20
Drain to Source Voltage VDS (V)
Switching Time t (ns)
50
Capacitance C (pF)
Switching Characteristics
1000
200
tr
100
tf
50
20
t d(on)
t d(off)
10
5
2
1
-0.01
V GS = -4 V, VDD = -10 V
PW = 5 µs, duty < 1 %
-0.05
-0.02
Drain Current I D (A)
-0.1
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
-0.2
V GS = 0,5V
-0.16
-5 V
-10 V
-0.12
-0.08
-0.04
Pulse Test
0
-0.4
-0.8
-1.2
Source to Drain Voltage
-1.6
VSD
-2.0
(V)
5
2SJ587
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
Vin
10%
D.U.T.
RL
90%
Vin
-4 V
50
V DD
= –10 V
Vout
td(on)
6
90%
90%
10%
10%
tr
td(off)
tf
2SJ587
Package Dimensions
Unit: mm
+ 0.1
0.15 – 0.05
+ 0.1
– 0.1
+ 0.2
– 0.2
1.6
0.4
+ 0.1
– 0.05
0.8
0.3
0 ~ 0.1
+ 0.1
0.5
0.5
0.1
0.2 +– 0.0.5
0.7 – 0.1
+ 0.1
0.15
+ 0.1
1.0 – 0.1
+ 0.2
.1.6 – 0.2
0.4
0.2– 0.05
Hitachi Code
EIAJ
JEDEC
SMPAK
–
–
7
2SJ587
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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