HITACHI 2SK975

2SK975
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92 Mod
D
32
1
1. Source
2. Drain
3. Gate
G
S
2SK975
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
1.5
A
4.5
A
1
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1.5
A
Channel dissipation
Pch
900
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
100
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(off)
—
0.3
0.4
Ω
I D = 1 A, VGS = 10 V *1
0.4
0.55
Ω
I D = 1 A, VGS = 4 V *1
Forward transfer admittance
|yfs|
0.9
1.5
—
S
I D = 1 A, VDS = 10 V *1
Input capacitance
Ciss
—
140
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
70
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
20
—
pF
Turn-on delay time
t d(on)
—
3
—
ns
I D = 1 A, VGS = 10 V,
Rise time
tr
—
12
—
ns
RL = 30 Ω
Turn-off delay time
t d(off)
—
50
—
ns
Fall time
tf
—
30
—
ns
Body to drain diode forward
voltage
VDF
—
0.9
—
V
I F = 1.5 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
45
—
ns
I F = 1.5 A, VGS = 0,
diF/dt = 50 A/µs
Note:
2
1. Pulse test
2SK975
Maximum Safe Operation Area
Power vs. Temperature Derating
10
1.0
D
C
150
0.1 Operation in this area
is limited by RDS (on)
3
2
3V
1
0
VGS = 2.5 V
6
2
4
8
10
Drain to Source Voltage VDS (V)
Ta = 25°C
Typical Transfer Characteristics
5
4.5 V
Pulse Test
5V
7V
4V
3.5 V
n
0.01
0.1 0.3
30
100
1.0
3
10
Drain to Source Voltage VDS (V)
4
Drain Current ID (A)
Drain Current ID (A)
4
10 V
ra
tio
Typical Output Characteristics
5
)
50
100
Case Temperature TC (°C)
O
pe
0.3
0.03
0
t
s
ho
m
1S
s(
0m
0.5
1
1.0
=1
Drain Current ID (A)
3
PW
Channel Dissipation Pch (W)
µs s
10 0 µ
10
1.5
VDS = 10 V
Pulse Test
3
2
1
75°C
0
–25°C
TC= 25°C
3
1
2
4
Gate to Source Voltage VGS (V)
5
3
2SK975
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
0.8
2A
0.6
0.4
1A
ID = 0.5 A
0.2
0
6
2
4
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage
VDS (on) (V)
1.0
Static Drain to Source On State
Resistance vs. Drain Current
5
Pulse Test
2
VGS = 4 V
1.0
0.5
10 V
0.2
0.1
0.05
0.05
0.6
Forward Transfer Admittance  yfs  (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
4
0.8
Pulse Test
ID = 2 A
1A
0.5 A
VGS = 4 V
0.4
0.2
0
–40
VGS = 10 V
2 A 0.5 A
1A
0
40
120
80
Case Temperature TC (°C)
0.2
0.5 1.0
2
Drain Current ID (A)
5
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.1
160
5
2
VDS = 10 V
–25°C
Pulse Test T = 25°C
C
1.0
75°C
0.5
0.2
0.1
0.05
0.05
0.1
0.2
2
0.5 1.0
Drain Current ID (A)
5
2SK975
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
500
VGS = 0
f = 1 MHz
300
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
20
Ciss
100
Coss
30
Crss
10
3
10
0.05
1
0.1 0.2
0.5 1.0
2
Reverse Drain Current IDR (A)
0
5
Switching Characteristics
Dynamic Input Characteristics
16
25 V
10 V
40
12
VDS
VDD = 50 V
20
25 V
10 V
0
2
VGS
8
ID = 1.5 A
4
6
8
Gate Charge Qg (nc)
4
0
10
td (off)
50
Switching Time t (ns)
VDD = 50 V
80
60
100
20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
100
10
20
30
40
50
Drain to Source Voltage VDS (V)
tf
VGS = 10 V VDD = 30 V
PW = 2 µs, duty < 1 %
•
20
•
tr
10
5
td (on)
2
1
0.05
0.1
0.5 1.0
0.2
2
Drain Current ID (A)
5
5
2SK975
Reverse Drain Current vs.
Source to Drain Voltage
2.0
Reverse Drain Current IDR (A)
Pulse Test
1.6
1.2
5V
0.8
0.4
0
6
10 V
15 V
VGS = 0, –5 V
0.8
0.4
1.2
2.0
1.6
Source to Drain Voltage VSD (V)
Unit: mm
4.8 ± 0.3
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.5 ± 0.1
10.1 Min
2.3 Max
8.0 ± 0.5
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 Mod
—
Conforms
0.35 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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