HITACHI 2SJ471

2SJ471
Silicon P Channel DV–L MOS FET
High Speed Power Switching
ADE-208-540
1st. Edition
Features
• Low on-resistance
R DS(on) = 25 mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
TO–220CFM
D
G
1 2
S
3
1. Gate
2. Drain
3. Source
2SJ471
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–30
A
–120
A
–30
A
30
W
Drain peak current
I D(pulse)
Body to drain diode reverse drain current
I DR
Note1
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
2
2SJ471
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
–30
—
—
V
I D = –10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
–10
µA
VDS = –30 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Gate to source cutoff voltage VGS(off)
–1.0
—
–2.0
V
I D = –1mA, VDS = –10V
Static drain to source on state RDS(on)
—
25
35
mΩ
I D = –15A, VGS = –10V Note3
resistance
RDS(on)
—
40
60
mΩ
I D = –15A, VGS = –4V Note3
Forward transfer admittance
|yfs|
12
20
—
S
I D = –15A, VDS = –10V Note3
Input capacitance
Ciss
—
1700
—
pF
VDS = –10V
Output capacitance
Coss
—
950
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
260
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
20
—
ns
VGS = –10V, ID = –15A
Rise time
tr
—
290
—
ns
RL = 0.67Ω
Turn-off delay time
t d(off)
—
170
—
ns
Fall time
tf
—
130
—
ns
Body to drain diode forward
voltage
VDF
—
–1.1
—
V
I F = –30A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
70
—
ns
I F = –30A, VGS = 0
diF/ dt = 50A/µs
Note:
3. Pulse test
3
2SJ471
Main Characteristics
Power vs. Temperature Derating
Maximun Safe Operation Area
–500
–10
–5
150
–40
–3.5 V
–3 V
–20
VGS = –2.5 V
–40
–2
–4
–6
–8
Tc = –25°C
75°C
–30
–20
–10
V DS = –10 V
Pulse Test
–10
Drain to Source Voltage V DS (V)
4
Ta = 25 °C
25°C
Pulse Test
0
)
Typical Transfer Characteristics
–30
–10
ot
–50
Drain Current I D (A)
Drain Current I D (A)
Typical Output Characteristics
–10 V –6 V
–5 V
–4.5 V
–4 V
sh
–3
–0.1 –0.3
–1
–10 –30 –100
Drain to Source Voltage V DS (V)
200
Case Temperature Tc (°C)
–50
(1
)
100
s
s
°C
50
Operation in
this area is
limited by R DS(on)
m
m
25
0
1
=
–1
–0.5
10
c
–2
=
µs
–20
(T
10
PW
–50
0
20
10 µs
–100
10
30
n
tio
ra
pe
O
Drain Current I D (A)
–200
C
D
Channel Dissipation Pch (W)
40
0
–1
–2
–3
–4
–5
Gate to Source Voltage V GS (V)
2SJ471
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
Pulse Test
–0.8
0.2
–0.6
0.1
I D = –20 A
–0.4
–10 A
–0.2
0
–5 A
Drain to Source on State Resistance
R DS(on) ( Ω )
Static Drain to Source on State Resistance
vs. Temperature
0.10
0.08
I D = –20 A
0.06
V GS = –4 V
–5, –10 A
0.04
–5, –10, –20 A
0.02
0
–40
–10 V
Pulse Test
0
40
80
120
Cate Temperature Tc (°C)
160
0.05
VGS = –4 V
0.02
–10 V
0.01
–1
–8
–4
–12
–16
–20
Gate to Source Voltage VGS (V)
–2
–5
–10 –20
Drain Current I D (A)
–50
Foward Transfer Admittance vs.
Drain Current
Foward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
–1.0
Drain to Source on State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
20
Tc = –25 °C
10
5
2
25 °C
75 °C
1
0.5
0.2
V DS = –10 V
Pulse Test
0.1
–0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I D (A)
5
2SJ471
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
500
5000
Capacitance C (pF)
10000
Reverse Recovery Time trr (ns)
1000
200
100
50
20
2000
Ciss
1000
Coss
500
Crss
200
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
10
5
–0.1–0.2 –0.5 –1 –2
VGS = 0
f = 1 MHz
100
–5 –10 –20 –50
0
–30
–40
–4
V GS
–20
–8
V DS
–12
V DD = –25 V
–10 V
–5 V
–16
I D = –30 A
–50
0
16
32
48
64
Gate Charge Qg (nc)
6
–16
–20
Switching Characteristics
–20
80
500
Switching Time t (ns)
–10
–12
1000
0
Gate to Source Voltage VGS (V)
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
V DD = –5 V
–10 V
–25 V
–8
Drain to Source Voltage VDS (V)
Reverse Drain Current I DR (A)
0
–4
t d(off)
200
100
tr
tf
50
t d(on)
20
10
V GS = –10 V, V DD = –10 V
duty < 1 %
5
–0.1–0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain Current I D (A)
2SJ471
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
–50
Pulse Test
–40
–30
–10 V
–5 V
V GS = 0, 5 V
–20
–10
0
–0.4
–0.8 –1.2 –1.6
–2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermao Impedance γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.17 °C/W, Tc = 25 °C
0.1
0.05
0.03
0.01
10 µ
PDM
0.02
1
lse
0.0
pu
t
ho
1s
100 µ
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
7
2SJ471
Switching Timen Test Circuit
Waveform
Vout
Monitor
Vin Monitor
Vin
10%
D.U.T.
RL
90%
Vin
10 V
50Ω
V DD
= –10 V
Vout
td(on)
8
90%
90%
10%
10%
tr
td(off)
tf
2SJ471
Package Dimensions
Unit: mm
1.0 ± 0.2
1.15 ± 0.2
2.54 ± 0.5
2.54 ± 0.5
2.5 ± 0.2
13.6 ± 1.0
4.45 ± 0.3
4.1 ± 0.3
0.6 ± 0.1
2.7 ± 0.2
15.0 ± 0.3
f 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
0.7 ± 0.1
Hitachi Code TO–220CFM
—
EIAJ
—
JEDEC
9
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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traffic, safety equipment or medical equipment for life support.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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