2SK2828 Silicon N Channel MOS FET High Speed Power Switching ADE-208-514 C (Z) 4th. Edition Feb 1999 Features • • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC–DC converter Avalanche ratings Outline TO–3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 700 V Gate to source voltage VGSS ±30 V Drain current ID 12 A 48 A 12 A Drain peak current I D(pulse)* Body-drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 175 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 2 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 2SK2828 Electrical Characteristics (Ta = 25°C) Item Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 700 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±30 — — V I G = ±100µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±25V, VDS = 0 Zero gate voltege drain current I DSS — — 100 µA VDS = 560 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1mA, VDS = 10V*3 Static drain to source on state resistance RDS(on) — 0.9 1.2 Ω I D = 6A, VGS = 10V*3 Forward transfer admittance |yfs| 5.5 9.0 — S I D = 6A, VDS = 10V*3 Input capacitance Ciss — 1850 — pF VDS = 10V Output capacitance Coss — 400 — pF VGS = 0 Reverse transfer capacitance Crss — 45 — pF f = 1MHz Total gate charge Qg — 35 — nc VDD = 400V Gate to source charge Qgs — 8 — nc VGS = 10V Gate to drain charge Qgd — 10 — nc I D = 12A Turn-on delay time t d(on) — 25 — ns I D = 6A, RL = 5Ω Rise time tr — 65 — ns VGS = 10V Turn-off delay time t d(off) — 140 — ns Fall time tf — 55 — ns Body–drain diode forward voltage VDF — 0.95 — V I F = 12A, VGS = 0 Body–drain diode reverse recovery time t rr — 2.5 — µs I F = 12A, VGS = 0 diF/ dt =100A/µs Note: Symbol 3. Pulse test 3 2SK2828 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 200 100 Drain Current I D (A) Channel Dissipation Pch (W) 50 150 100 50 0 50 100 Case Temperature 150 20 1s n( Tc 0.5 Operation in this area is limited by R DS(on) 0.2 0.1 Ta = 25 °C 1 s s( era µs s 1m 0m Op 2 Tc (°C) ho =2 t) 5° C) 10 20 50 100 200 500 1000 Drain to Source Voltage V DS(V) Typical Transfer Characteristics 20 V DS = 10 V Pulse Test 5V I D (A) 8V 6V 12 8 4.5 V 4 VGS = 4 V Drain Current I D (A) Drain Current =1 tio Typical Output Characteristics 16 DC 5 5 20 10 V 0µ PW 10 200 10 10 16 –25°C 12 25°C Tc = 75°C 8 4 Pulse Test 0 4 10 20 30 Drain to Source Voltage V 40 DS(V) 50 0 2 4 6 Gate to Source Voltage V 8 (V) GS 10 2SK2828 Drain to Source Saturation Voltage V DS(on) (V) 20 Pulse Test 16 12 I D = 10 A 8 5A 4 Drain to Source On State Resistance R DS(on) ( W) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 0.5 VGS = 10, 15V 0.2 0.1 0.05 12 4 8 Gate to Source Voltage 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 4.0 Pulse Test 3.2 2.4 I D = 10 A 1.6 V GS = 10 V 5A 0.8 0 –40 0 40 80 120 160 Case Temperature Tc (°C) 1 2 5 10 20 50 Drain Current I D (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) ( W) 0 50 20 10 Tc = –25 °C 5 25 °C 2 1 0.5 0.2 75 °C V DS = 10 V Pulse Test 1 2 10 0.5 5 Drain Current I D (A) 20 5 2SK2828 Body–Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) 5 5000 Capacitance C (pF) 2 1 0.5 0.2 0.1 1000 500 100 20 5 0 400 200 0 VDS 12 8 V DD = 400 V 250 V 100 V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 Switching Time t (ns) V DD = 100 V 250 V 400 V 600 16 500 V GS (V) ID = 12 A 10 20 30 40 50 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage 20 VGS Crss 10 Dynamic Input Characteristics 800 VGS = 0 f = 1 MHz 50 10 20 50 I DR (A) 1000 Coss 200 di / dt = 100 A / µs V GS = 0, Ta = 25 °C 0.05 0.1 0.2 0.5 1 2 5 Reverse Drain Current 6 Ciss 2000 Switching Characteristics t d(off) 200 100 tf 50 t d(on) 20 tr 10 5 0.1 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 Drain Current 10 30 I D (A) 100 2SK2828 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 50 40 30 V GS = 0, –5 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.01 10 µ 0.2 q ch – c(t) = g s (t) • q ch – c q ch – c = 0.71 °C/W, Tc = 25 °C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 100 µ D= PW T PW T 1m 10 m Pulse Width 100 m 1 10 PW (S) 7 2SK2828 Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50W V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK2828 Package Dimentions Unit: mm 5.0 ± 0.3 5.0 max 0.3 typ 1.5 typ 20.1 max 2.0 typ 0.5 typ 16.0 max 14.9 ± 0.2 1.0 typ f 3.2 ± 0.2 1.4 max 2.0 typ 1.0 ± 0.2 3.6 typ 5.45 ± 0.2 18.0 ± 0.5 1.6 typ 2.8 typ 0.6 ± 0.2 0.9 typ 1.0 typ 5.45 ± 0.2 Hitachi Code EIAJ JEDEC TO–3P SC–65 — 9 2SK2828 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 10