HAT2092R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-1236A (Z) 2nd. Edition Jan. 2001 Features • • • • Low on-resistance Capable of 4.5 V gate drive Low drive current High density mounting Outline SOP-8 8 5 7 6 3 1 2 4 5 6 D D 7 8 D D 4 G 2 G S1 MOS1 S3 MOS2 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain HAT2092R Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 11 A 88 A Drain peak current I D(pulse) Note1 Body–drain diode reverse drain current I DR 11 A Pch Note2 2 W Channel dissipation Pch Note3 3 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Channel dissipation Note: 2 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s HAT2092R Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ± 20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16V, VDS = 0 Zero gate voltege drain current I DSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10V, I D = 1mA Static drain to source on state RDS(on) — 13 16 mΩ I D = 5.5A,VGS = 10V Note4 resistance RDS(on) — 17 25 mΩ I D = 5.5A,VGS = 4.5V Note4 Forward transfer admittance |yfs| 12 20 — S I D = 5.5A,VDS = 10V Note4 Input capacitance Ciss — 1400 — pF VDS = 10V Output capacitance Coss — 340 — pF VGS = 0 Reverse transfer capacitance Crss — 190 — pF f = 1MHz Total gate charge Qg — 22 — nc VDD = 10 V Gate to source charge Qgs — 4 — nc VGS = 10 V Gate to drain charge Qgd — 4 — nc I D = 11 A Turn-on delay time t d(on) — 15 — ns VGS = 10A, ID = 5.5A Rise time tr — 17 — ns VDD ≅ 10V Turn-off delay time t d(off) — 50 — ns RL = 1.83Ω Fall time tf — 9 — ns Rg = 4.7Ω Body–drain diode forward voltage VDF — 0.85 1.10 V IF = 11A, VGS = 0 Note4 Body–drain diode reverserecovery time t rr — 50 — ns IF = 11A, VGS = 0 diF/ dt =50A/µs Note: 4. Pulse test 3 HAT2092R Package Dimensions As of January, 2001 Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 ± 0.03 0.20 ± 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 – 0.30 1.08 0.14 – 0.04 *0.42 ± 0.08 0.40 ± 0.06 + 0.11 0° – 8° 1.27 + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension 4 Hitachi Code JEDEC EIAJ Mass (reference value) FP-8DA Conforms — 0.085 g HAT2092R Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 5