ETC HAT2092R

HAT2092R
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-1236A (Z)
2nd. Edition
Jan. 2001
Features
•
•
•
•
Low on-resistance
Capable of 4.5 V gate drive
Low drive current
High density mounting
Outline
SOP-8
8
5
7 6
3
1 2
4
5 6
D D
7 8
D D
4
G
2
G
S1
MOS1
S3
MOS2
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
HAT2092R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
11
A
88
A
Drain peak current
I D(pulse)
Note1
Body–drain diode reverse drain current I DR
11
A
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Channel dissipation
Note:
2
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
HAT2092R
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
30
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
± 20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Zero gate voltege drain current I DSS
—
—
1
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10V, I D = 1mA
Static drain to source on state
RDS(on)
—
13
16
mΩ
I D = 5.5A,VGS = 10V Note4
resistance
RDS(on)
—
17
25
mΩ
I D = 5.5A,VGS = 4.5V Note4
Forward transfer admittance
|yfs|
12
20
—
S
I D = 5.5A,VDS = 10V Note4
Input capacitance
Ciss
—
1400
—
pF
VDS = 10V
Output capacitance
Coss
—
340
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
190
—
pF
f = 1MHz
Total gate charge
Qg
—
22
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
4
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
4
—
nc
I D = 11 A
Turn-on delay time
t d(on)
—
15
—
ns
VGS = 10A, ID = 5.5A
Rise time
tr
—
17
—
ns
VDD ≅ 10V
Turn-off delay time
t d(off)
—
50
—
ns
RL = 1.83Ω
Fall time
tf
—
9
—
ns
Rg = 4.7Ω
Body–drain diode forward
voltage
VDF
—
0.85
1.10
V
IF = 11A, VGS = 0 Note4
Body–drain diode
reverserecovery time
t rr
—
50
—
ns
IF = 11A, VGS = 0
diF/ dt =50A/µs
Note:
4. Pulse test
3
HAT2092R
Package Dimensions
As of January, 2001
Unit: mm
3.95
4.90
5.3 Max
5
8
*0.22 ± 0.03
0.20 ± 0.03
4
1.75 Max
1
0.75 Max
+ 0.10
6.10 – 0.30
1.08
0.14 – 0.04
*0.42 ± 0.08
0.40 ± 0.06
+ 0.11
0° – 8°
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
4
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
HAT2092R
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
5