3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 (Z) 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline CMPAK-4 2 3 1 4 Note: Marking is “ZR-”. 1. Source 2. Gate1 3. Gate2 4. Drain 3SK317 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 14 V Gate1 to source voltage VG1S ±8 V Gate2 to source voltage VG2S ±8 V Drain current ID 25 mA Channel power dissipation Pch 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 14 — — V I D = 200 µA VG1S = VG2S = -3 V Gate1 to source breakdown voltage V(BR)G1SS ±8 — — V I G1 = ±10 µA VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS ±8 — — V I G2 = ±10 µA VG1S = VDS = 0 Gate1 to source cutoff current I G1SS — — ±100 nA VG1S = ±6 V VG2S = VDS = 0 Gate2 to source cutoff current I G2SS — — ±100 nA VG2S = ±6 V VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0 0.2 1 V VDS = 10 V, VG2S = 3 V I D = 100 µA Gate2 to source cutoff voltage VG2S(off) 0 0.3 1 V VDS = 10 V, VG1S = 3 V I D = 100 µA Drain current I DS(op) 4 8 14 mA VDS = 6 V, VG1S = 0.75 V VG2S = 3 V Forward transfer admittance |yfs| 20 25 — mS VDS = 6 V, VG2S = 3 V I D = 10 mA , f = 1 kHz Input capacitance Ciss 2.4 3.1 3.5 pF VDS = 6 V, VG2S = 3 V Output capacitance Coss 0.8 1.1 1.4 pF I D = 10 mA , f = 1 MHz Reverse transfer capacitance Crss — 0.021 0.04 pF Power gain PG 24 27.6 — dB VDS = 6 V, VG2S = 3 V Noise figure NF — 1.0 1.5 dB I D = 10 mA , f = 200 MHz Power gain PG 12 15.6 — dB VDS = 6 V, VG2S = 3 V Noise figure NF — 3 4 dB I D = 10 mA , f = 900 MHz Noise figure NF — 2.7 3.5 dB VDS = 6 V, VG2S = 3 V I D = 10 mA , f = 60 MHz 2 3SK317 20 200 Typical Output Characteristics I D (mA) 1.2 V 150 VG2S= 3 V Pulse test 16 1.0 V 12 Drain current Channel power dissipation Pch (mW) Maximum Channel Power Dissipation Curve 100 50 4 50 100 150 200 0 2 10 4 6 8 Drain to source voltage V DS (V) Drain Current vs. Gate2 to Source Voltage 20 3.0 V 2.0 V V DS = 6 V Pulse test 2.5 V 16 1.5 V 12 12 8 Drain current Drain Current vs. Gate1 to Source Voltage 20 3.0 V VDS = 6 V 2.5 V Pulse test 2.0 V 16 1.5 V (mA) (°C) ID Ambient Temperature Ta I D (mA) 0.6 V V G1S = 0.4 V 0 Drain current 0.8 V 8 1.0 V 4 1.0 V 8 4 VG1S = 0.5 V VG2S = 0.5 V 0 1 2 3 Gate1 to source voltage 4 5 VG1S (V) 0 1 2 3 Gate2 to source voltage 4 5 VG2S (V) 3 Forward Transfer Admittance vs. Gate1 to Source Voltage VDS= 6 V f = 1kHz 3V 24 2.5 V 18 2V 12 1.5 V 6 0.4 0.8 1.2 1.6 2 Gate1 to source voltage VG1S (V) 30 20 0 Noise Figure vs. Drain Current VDS= 6 V VG2S = 3V f = 200MHz 4 3 2 1 0 4 8 12 16 Drain current I D (mA) 20 4 8 12 16 Drain current I D (mA) 20 Power Gain vs. Drain to Source Voltage 50 Power gain PG (dB) NF (dB) 40 10 1V 5 Noise figure VDS= 6 V VG2S = 3V f = 200MHz VG2S = 0.5 V 0 4 Power Gain vs. Drain Current 50 30 Power gain PG (dB) Forward transfer admittance |yfs| (mS) 3SK317 VG2S= 3V I D = 10mA f = 200MHz 40 30 20 10 0 2 4 6 8 Drain to source voltage VDS (V) 10 3SK317 20 VG2S = 3V I D = 10mA f = 200MHz 3 2 1 0 2 4 6 8 Drain to source voltage VDS NF (dB) Noise figure 12 8 0 10 VDS = 6V VG2S = 3V f = 900MHz 4 (V) 8 12 16 20 Drain current I D (mA) Noise Figure vs. Drain Current Power Gain vs. Drain to Source Voltage 20 4 16 3 2 VDS = 6V VG2S = 3V f = 900MHz 1 0 16 4 Power gain PG (dB) Noise figure NF (dB) 4 5 Power Gain vs. Drain Current Noise Figure vs. Drain to Source Voltage Power gain PG (dB) 5 4 8 12 16 Drain current I D (mA) 20 12 8 VG2S = 3V I D = 10mA f = 900MHz 4 0 2 4 6 Drain to source voltage 8 VDS 10 (V) 5 3SK317 5 NF (dB) VG2S = 3V I D = 10mA f = 900MHz 8 6 4 2 2 4 6 8 Drain to source voltage VDS NF (dB) Noise figure 4 6 10 (V) Noise Figure vs. Drain to Source Voltage VG2S = 3V I D = 10mA f = 60MHz 3 2 1 0 VDS = 6V VG2S = 3V f = 60MHz 4 3 2 1 0 5 Noise Figure vs. Drain Current Noise Figure vs. Drain to Source Voltage Noise figure Noise figure NF (dB) 10 2 4 6 Drain to source voltage 8 VDS 10 (V) 0 4 8 Drain current 12 16 I D (mA) 20 3SK317 Package Dimensions Unit: mm 1.3 0.65 0.65 + 0.1 + 0.1 0.3 – 0.05 0.3 – 0.05 3 0.425 2.0 ±0.2 + 0.1 0.16 – 0.06 1.25 2.1 ±0.3 2 0 ~ 0.1 1 4 + 0.1 0.4 – 0.05 0.65 0.6 0.425 + 0.1 0.3 – 0.05 0.9 ±0.1 0.2 1.25 Hitahi Code EIAJ JEDEC CMPAK-4 SC-82AB — 7 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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