HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching ADE-208-586 (Z) 1st. Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. • Logic level operation (–4 to –6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D 4 Gate resistor G Tempe– rature Sencing Circuit Latch Circuit 4 1 1 Gate Shut– down Circuit S 2 2 3 3 1. Gate 2. Drain 3. Source 4. Drain HAF1002(L), HAF1002(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS+ –16 V Gate to source voltage VGSS– 3 V Drain current ID –15 A –30 A –15 A 50 W Drain peak current I D(pulse) Note1 Body-drain diode reverse drain current I DR Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Typical Operation Characteristics Item Symbol Min Typ Max Unit Input voltage VIH –3.5 — — V VIL — — –1.2 V Input current I IH1 — — –100 µA Vi = –8V, VDS = 0 (Gate non shut down) I IH2 — — –50 µA Vi = –3.5V, VDS = 0 I IL — — –1 µA Vi = –1.2V, VDS = 0 Input current I IH(sd)1 — –0.8 — mA Vi = –8V, VDS = 0 (Gate shut down) I IH(sd)2 — –0.35 — mA Vi = –3.5V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Gate operation voltage VOP –3.5 — –13 V 2 Test Conditions HAF1002(L), HAF1002(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current I D1 –7 — — A VGS = –3.5V, VDS = –2V Drain current I D2 — — –10 mA VGS = –1.2V, VDS = –2V Drain to source breakdown voltage V(BR)DSS –60 — — V I D = –10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS+ –16 — — V I G = –100µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS– 3 — — V I G = 100µA, VDS = 0 Gate to source leak current I GSS+1 — — –100 µA VGS = –8V, VDS = 0 I GSS+2 — — –50 µA VGS = –3.5V, VDS = 0 I GSS+3 — — –1 µA VGS = –1.2V, VDS = 0 I GSS– — — 100 µA VGS = 2.4V, VDS = 0 I GS(op)1 — –0.8 — mA VGS = –8V, VDS = 0 I GS(op)1 — –0.35 — mA VGS = –3.5V, VDS = 0 Zero gate voltege drain current I DSS — — –250 µA VDS = –50 V, VGS = 0 Gate to source cutoff voltage –1.1 — –2.25 V I D = –1mA, VDS = –10V Static drain to source on state RDS(on) resistance — 100 130 mΩ I D = –7.5A, VGS = –4V Note3 Static drain to source on state RDS(on) resistance — 70 90 mΩ Forward transfer admittance |yfs| 5 10 — S I D = –7.5A, VDS = –10V Note3 Output capacitance Coss — 610 — pF VDS = –10V , VGS = 0 Input current (shut down) VGS(off) I D = –7.5A VGS = –10V Note3 f = 1 MHz Turn-on delay time t d(on) — 7.5 — µs I D = –7.5A, VGS = –5V Rise time tr — 36 — µs RL = 4Ω Turn-off delay time t d(off) — 32 — µs Fall time tf — 29 — µs Body–drain diode forward VDF — –1.0 — V I F = –15A, VGS = 0 t rr — 200 — ns I F = –15A, VGS = 0 voltage Body–drain diode reverse recovery time diF/ dt =50A/µs Over load shut down operation time Note: Note4 t os1 — 3.7 — ms VGS = –5V, VDD = –12V t os2 — 1 — ms VGS = –5V, VDD = –24V 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. • See characteristics curve of HAF1001. 3 HAF1002(L), HAF1002(S) Package Dimensions 1.2 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 2.54 ± 0.5 (1.4) (1.5) (1.5) 1.27 ± 0.2 3.0 +0.3 –0.5 2.59 ± 0.2 4.44 ± 0.2 8.6 ± 0.3 10.0 +0.3 –0.5 10.2 ± 0.3 1.27 ± 0.2 0.76 ± 0.1 1.3 ± 0.2 11.3 ± 0.5 4.44 ± 0.2 11.0 ± 0.5 1.2 ± 0.2 0.86 +0.2 –0.1 8.6 ± 0.3 10.0 +0.3 –0.5 (1.5) 10.2 ± 0.3 (1.4) Unit: mm 1.3 ± 0.2 0.1 +0.2 –0.1 2.59 ± 0.2 0.4 ± 0.1 0.86 +0.2 –0.1 2.54 ± 0.5 S type Hitachi Code EIAJ JEDEC 4 LDPAK — — Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. 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