January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 60mΩ (VGS = -2.5V) RDS(ON) < 85mΩ (VGS = -1.8V) D TSOP6 Top View D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±8 V -30 2 W 1.44 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -4.5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -5.5 TA=25°C Power Dissipation A Maximum -20 RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units °C/W °C/W °C/W AO6407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-16V, VGS=0V -20 VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V -0.3 gFS VSD IS Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A VDS=-5V, ID=-5A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr V µA -0.55 ±100 -1 nA V 34 48 46 45 60 60 mΩ 61 14 85 mΩ 7 -0.78 -1 -2.2 V A A mΩ S VGS=0V, VDS=-10V, f=1MHz 1180 176 pF pF VGS=0V, VDS=0V, f=1MHz 142 15 pF Ω VGS=-4.5V, VDS=-10V, ID=-5A 13 1.2 nC nC 3.6 13.2 21 93 46 43 nC ns ns ns ns Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Units -25 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Max -1 -5 TJ=55°C VGS=-4.5V, ID=-5A RDS(ON) Typ VGS=-4.5V, VDS=-10V, RL=2.0Ω, RGEN=3Ω IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 21 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. ns nC AO6407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 10 -8V VDS=-5V -4.5V 20 8 -3.0V -2.0V 6 15 -ID(A) -ID (A) -2.5V 10 VGS=-1.5V 5 4 125°C 25°C 2 0 0 0 1 2 3 4 5 0 0.5 -VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 1.6 VGS=-1.8V 60 VGS=-2.5V 40 VGS=-4.5V 20 ID=-5A, VGS=-4.5V 1.4 ID=-3A, VGS=-1.8V ID=-4A, VGS=-2.5V 1.2 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 90 1.0E+00 80 125°C ID=-5A 1.0E-01 70 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics 60 50 1.0E-02 25°C 1.0E-03 125°C 1.0E-04 40 25°C 30 1.0E-05 20 1.0E-06 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=-10V ID=-5A 1600 Capacitance (pF) -VGS (Volts) 4 3 2 Ciss 1200 800 Coss 1 400 0 0 0 3 6 9 12 15 Crss 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 TJ(Max)=150°C TA=25°C 10 40 30 100µs 1ms 0.1s 20 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 15 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 5 10ms 1.0 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA TSOP-6 Package Data SEMICONDUCTOR, INC. SYMBOLS GAUGE PLANE PACKAGE MARKING DESCRIPTION NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE. A A1 A2 b c D E E1 e e1 L θ1 0.37 1° NOM −−− −−− 1.10 0.40 0.13 2.90 2.80 1.80 0.95 BSC 1.90 BSC −−− 5° PART NO. CODE AO6407 D7 MAX 1.25 0.10 1.15 0.50 0.20 3.10 3.00 2.00 −−− 8° NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.1000 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE RECOMMENDED LAND PATTERN TSOP-6 PART NO. CODE PNDLN SEATING PLANE θ DIMENSIONS IN MILLIMETERS MIN 1.00 0.00 1.00 0.35 0.10 2.70 2.60 1.60 ALPHA & OMEGA SEMICONDUCTOR, INC. TSOP-6 Carrier Tape TSOP-6 Reel TSOP-6 Tape Leader / Trailer & Orientation TSOP-6 Tape and Reel Data