AO4429 - Alpha & Omega Semiconductor

AO4429
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4429 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch. The device is ESD protected. Standard
Product AO4429 is Pb-free (meets ROHS & Sony
259 specifications). AO4429L is a Green Product
ordering option. AO4429 and AO4429L are
electrically identical.
VDS (V) = -30V
ID = -15 A (VGS = -10V)
Max RDS(ON) < 7.7mΩ (VGS = -10V)
Max RDS(ON) < 12mΩ (VGS = -4.5V)
ESD Rating: 4KV HBM
D
SOIC-8
Top View
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±20
V
-80
3.1
W
2
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
-12.8
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
-15
TA=25°C
Power Dissipation A
Maximum
-30
RθJA
RθJL
Typ
26
50
14
Max
40
75
24
Units
°C/W
°C/W
°C/W
AO4429
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-80
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qg(4.5V) Gate Charge
Qgs
VGS=-10V, VDS=-15V, I D=-15A
V
8.1
12
mΩ
mΩ
S
-0.71
-1
V
-5
A
6400
pF
970
pF
620
pF
2.8
4
Ω
91
120
nC
46
60
nC
nC
Gate Drain Charge
21
nC
Turn-On DelayTime
15
ns
15
ns
82.5
ns
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Qrr
VGS=0V, VDS=0V, f=1MHz
µA
A
5355
VGS=0V, VDS=-15V, f=1MHz
µA
16
Gate Source Charge
Qgd
trr
7.7
50
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Rg
6.4
VDS=-5V, ID=-15A
Forward Transconductance
Reverse Transfer Capacitance
-2.7
9
gFS
Output Capacitance
-1.8
VGS=-4.5V, I D=-10A
VSD
Coss
-10
±10
VGS=-10V, I D=-15A
Crss
V
TJ=55°C
Static Drain-Source On-Resistance
Units
-1
Zero Gate Voltage Drain Current
IS
Max
VDS=-24V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=-10V, VDS=-15V, RL=1Ω,
RGEN=3Ω
34
Body Diode Reverse Recovery Time
IF=-15A, dI/dt=100A/µs
38
Body Diode Reverse Recovery Charge
IF=-15A, dI/dt=100A/µs
38
ns
50
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
ns
nC
AO4429
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
-10V
-4.5V
50
-4V
40
-ID(A)
-ID (A)
40
VDS=-5V
50
-3.5V
30
20
30
20
VGS=-3V
125°C
10
10
0
0
25°C
0
1
2
3
4
1
5
1.5
10
3
3.5
4
Normalized On-Resistance
1.6
VGS=-4.5V
8
RDS(ON) (mΩ)
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
6
VGS=-10V
4
2
ID=-15A
1.4
VGS=-10V
1.2
VGS=-4.5V
1
0.8
0
5
10
15
20
25
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
20
ID=-15A
16
1.0E+00
125°C
12
8
VGS=0V
125°C
1.0E-01
-IS (A)
RDS(ON) (mΩ)
2
1.0E-02
25°C
1.0E-03
25°C
4
1.0E-04
1.0E-05
0
0.0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
AO4429
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
10
VDS=-15V
ID=-15A
7000
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
6000
5000
4000
3000
Crss
Coss
2000
2
1000
0
0
0
20
40
60
80
100
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
RDS(ON)
limited
100µs
Power (W)
-ID (Amps)
10ms
1s
10s
TJ(Max)=150°C
TA=25°C
1
30
TJ(Max)=150°C
TA=25°C
60
40
20
DC
0.1
0.1
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
80
0.1s
1.0
10
100
10µs
1ms
10.0
5
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
8
1
RECOMMENDED LAND PATTERN
UNIT: mm
θ
GAUGE PLANE
SEATING PLANE
MIN
1.35
0.10
1.25
0.31
0.17
4.80
3.80
5.80
0.25
0.40
0°
NOM
1.65
−−−
1.50
−−−
−−−
4.90
3.90
1.27 BSC
6.00
−−−
−−−
−−−
MAX
1.75
0.25
1.65
0.51
0.25
5.00
4.00
0.228
0.010
0.016
0°
MIN
0.053
0.004
0.049
0.012
0.007
0.189
0.150
NOM
0.065
−−−
0.059
−−−
−−−
0.193
0.154
0.050 BSC
0.236
−−−
−−−
−−−
0.244
0.020
0.050
8°
MAX
0.069
0.010
0.065
0.020
0.010
0.197
0.157
DIMENSIONS IN INCHES
6.20
0.50
1.27
8°
DIMENSIONS IN MILLIMETERS
NOTE
1. ALL DIMENSIONS ARE IN MILLMETERS.
2.DIMENSIONS ARE INCLUSIVE OF PLATING.
3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
GATE BURRS.
4. DIMENSION L IS MEASURED IN GAUGE PLANE.
5. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
SYMBOLS
A
A1
A2
b
c
D
E1
e
E
h
L
θ
Document No.
ALPHA & OMEGA
Version
Title
SEMICONDUCTOR, LTD.
SO-8 PACKAGE MARKING DESCRIPTION
Standard product
NOTE:
LOGO
4429
F&A
Y
W
LT
- AOS LOGO
- PART NUMBER CODE.
- FOUNDRY AND ASSEMBLY LOCATION
- YEAR CODE
- WEEK CODE.
- ASSEMBLY LOT CODE
PART NO. DESCRIPTION
AO4429
AO4429L
Standard product
Green product
CODE
4429
4429
Green product
PD-00268
rev A
AO4429 Marking Description
ALPHA & OMEGA
SOP-8 Tape and Reel Data
SEMICONDUCTOR, LTD.
SOP-8 Carrier Tape
SOP-8 Reel
SOP-8 Tape
Leader / Trailer
& Orientation
Rev. A