AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4429 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L is a Green Product ordering option. AO4429 and AO4429L are electrically identical. VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.7mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) ESD Rating: 4KV HBM D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 V -80 3.1 W 2 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -12.8 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -15 TA=25°C Power Dissipation A Maximum -30 RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W AO4429 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -80 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qg(4.5V) Gate Charge Qgs VGS=-10V, VDS=-15V, I D=-15A V 8.1 12 mΩ mΩ S -0.71 -1 V -5 A 6400 pF 970 pF 620 pF 2.8 4 Ω 91 120 nC 46 60 nC nC Gate Drain Charge 21 nC Turn-On DelayTime 15 ns 15 ns 82.5 ns tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz µA A 5355 VGS=0V, VDS=-15V, f=1MHz µA 16 Gate Source Charge Qgd trr 7.7 50 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Rg 6.4 VDS=-5V, ID=-15A Forward Transconductance Reverse Transfer Capacitance -2.7 9 gFS Output Capacitance -1.8 VGS=-4.5V, I D=-10A VSD Coss -10 ±10 VGS=-10V, I D=-15A Crss V TJ=55°C Static Drain-Source On-Resistance Units -1 Zero Gate Voltage Drain Current IS Max VDS=-24V, VGS=0V IDSS RDS(ON) Typ VGS=-10V, VDS=-15V, RL=1Ω, RGEN=3Ω 34 Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs 38 Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 38 ns 50 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. ns nC AO4429 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 -10V -4.5V 50 -4V 40 -ID(A) -ID (A) 40 VDS=-5V 50 -3.5V 30 20 30 20 VGS=-3V 125°C 10 10 0 0 25°C 0 1 2 3 4 1 5 1.5 10 3 3.5 4 Normalized On-Resistance 1.6 VGS=-4.5V 8 RDS(ON) (mΩ) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 6 VGS=-10V 4 2 ID=-15A 1.4 VGS=-10V 1.2 VGS=-4.5V 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 20 ID=-15A 16 1.0E+00 125°C 12 8 VGS=0V 125°C 1.0E-01 -IS (A) RDS(ON) (mΩ) 2 1.0E-02 25°C 1.0E-03 25°C 4 1.0E-04 1.0E-05 0 0.0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4429 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=-15V ID=-15A 7000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 6000 5000 4000 3000 Crss Coss 2000 2 1000 0 0 0 20 40 60 80 100 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 RDS(ON) limited 100µs Power (W) -ID (Amps) 10ms 1s 10s TJ(Max)=150°C TA=25°C 1 30 TJ(Max)=150°C TA=25°C 60 40 20 DC 0.1 0.1 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 80 0.1s 1.0 10 100 10µs 1ms 10.0 5 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 8 1 RECOMMENDED LAND PATTERN UNIT: mm θ GAUGE PLANE SEATING PLANE MIN 1.35 0.10 1.25 0.31 0.17 4.80 3.80 5.80 0.25 0.40 0° NOM 1.65 −−− 1.50 −−− −−− 4.90 3.90 1.27 BSC 6.00 −−− −−− −−− MAX 1.75 0.25 1.65 0.51 0.25 5.00 4.00 0.228 0.010 0.016 0° MIN 0.053 0.004 0.049 0.012 0.007 0.189 0.150 NOM 0.065 −−− 0.059 −−− −−− 0.193 0.154 0.050 BSC 0.236 −−− −−− −−− 0.244 0.020 0.050 8° MAX 0.069 0.010 0.065 0.020 0.010 0.197 0.157 DIMENSIONS IN INCHES 6.20 0.50 1.27 8° DIMENSIONS IN MILLIMETERS NOTE 1. ALL DIMENSIONS ARE IN MILLMETERS. 2.DIMENSIONS ARE INCLUSIVE OF PLATING. 3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. 4. DIMENSION L IS MEASURED IN GAUGE PLANE. 5. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. SYMBOLS A A1 A2 b c D E1 e E h L θ Document No. ALPHA & OMEGA Version Title SEMICONDUCTOR, LTD. SO-8 PACKAGE MARKING DESCRIPTION Standard product NOTE: LOGO 4429 F&A Y W LT - AOS LOGO - PART NUMBER CODE. - FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE PART NO. DESCRIPTION AO4429 AO4429L Standard product Green product CODE 4429 4429 Green product PD-00268 rev A AO4429 Marking Description ALPHA & OMEGA SOP-8 Tape and Reel Data SEMICONDUCTOR, LTD. SOP-8 Carrier Tape SOP-8 Reel SOP-8 Tape Leader / Trailer & Orientation Rev. A