DC COMPONENTS CO., LTD. R LB120A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in high-voltage switching applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) o Absolute Maximum Ratings(TA=25oC) Characteristic o 2 Typ Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 100 mA Collector Current (pulse) IC 200 mA Base Current (DC) IB 20 mA Base Current (pulse) IB 40 mA Total Power Dissipation PD 0.8 W o 2 Typ .190(4.83) .170(4.33) Total Power Dissipation(TC=25 C) PD 7 Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .500 Min (12.70) .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ W C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 600 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 ICBO - - 10 µA VCB=550V, IE=0 Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width (1) Test Conditions ICEO - - 10 µA VCE=400V, IB=0 IEBO - - 10 µA VEB=6V, IC=0 VCE(sat)1 - - 0.4 V IC=50mA, IB=10mA VCE(sat)2 - - 0.75 V IC=100mA, IB=20mA VBE(sat) - - 1 V IC=50mA, IB=10mA hFE1 8 - - - IC=10mA, VCE=10V hFE2 10 - 36 - IC=50mA, VCE=10V 380µs, Duty Cycle 2%