DCCOM DMBT2222

DC COMPONENTS CO., LTD.
DMBT2222
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier
applications.
SOT-23
.020(0.50)
.012(0.30)
Pinning
1 = Base
2 = Emitter
3 = Collector
3
.063(1.60)
.055(1.40)
1
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
600
mA
Total Power Dissipation
PD
250
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
.108(0.65)
.089(0.25)
2
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.0043(0.11)
.0035(0.09)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
BVCBO
60
-
-
V
IC=10µA
Collector-Emitter Breakdown Voltage
BVCEO
30
-
-
V
IC=10mA
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
V
IE=10µA
ICBO
-
-
0.01
µA
VCB=50V
Collector Cutoff Current
Emitter Cutoff Current
(1)
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
Transition Frequency
(1)Pulse Test: Pulse Width
Test Conditions
IEBO
-
-
10
nA
VCE=60V, VEB(off)=3V
VCE(sat)1
-
-
0.4
V
IC=150mA, IB=15mA
VCE(sat)2
-
-
1.6
V
IC=500mA, IB=50mA
VBE(sat)1
-
-
1.3
V
IC=150mA, IB=15mA
VBE(sat)2
-
-
2.6
V
IC=500mA, IB=50mA
hFE1
35
-
-
-
IC=0.1mA, VCE=10V
hFE2
50
-
-
-
IC=1mA, VCE=10V
hFE3
75
-
-
-
IC=10mA, VCE=10V
hFE4
100
-
300
-
IC=150mA, VCE=10V
hFE5
30
-
-
-
IC=500mA, VCE=10V
250
-
-
MHz
fT
380µs, Duty Cycle
2%
IC=20mA, VCE=20V, f=100MHz