DC COMPONENTS CO., LTD. DMBT2222 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 600 mA Total Power Dissipation PD 250 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .108(0.65) .089(0.25) 2 .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO 60 - - V IC=10µA Collector-Emitter Breakdown Voltage BVCEO 30 - - V IC=10mA Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA ICBO - - 0.01 µA VCB=50V Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width Test Conditions IEBO - - 10 nA VCE=60V, VEB(off)=3V VCE(sat)1 - - 0.4 V IC=150mA, IB=15mA VCE(sat)2 - - 1.6 V IC=500mA, IB=50mA VBE(sat)1 - - 1.3 V IC=150mA, IB=15mA VBE(sat)2 - - 2.6 V IC=500mA, IB=50mA hFE1 35 - - - IC=0.1mA, VCE=10V hFE2 50 - - - IC=1mA, VCE=10V hFE3 75 - - - IC=10mA, VCE=10V hFE4 100 - 300 - IC=150mA, VCE=10V hFE5 30 - - - IC=500mA, VCE=10V 250 - - MHz fT 380µs, Duty Cycle 2% IC=20mA, VCE=20V, f=100MHz