DC COMPONENTS CO., LTD. R MJE3055T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) Absolute Maximum Ratings(TA=25 Characteristic .295(7.49) .220(5.58) o C) .625(15.87) .570(14.48) Symbol Rating .350(8.90) .330(8.38) Unit Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current IC 10 A Base Current IB 6 A o .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) Total Power Dissipation(TC=25 C) PD 75 Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .640 Typ (16.25) 1 2 3 .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) W .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 70 - - V IC=10mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=200mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=10mA, IC=0 ICBO - - 1 mA VCB=70V, IE=0 Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width Test Conditions ICEX - - 1 mA VCE=70V, VEB(off)=1.5V ICEO - - 0.7 mA VCE=30V, IB=0 IEBO - - 5 mA VEB=5V, IC=0 VCE(sat)1 - - 1.1 V IC=4A, IB=400mA VCE(sat)2 - - 8 V IC=10A, IB=3.3A VBE(on) - - 1.8 V IC=4A, VCE=4V hFE1 20 - 100 - IC=4A, VCE=4V hFE2 5 - - - IC=10A, VCE=4V fT 2 - - 380µs, Duty Cycle 2% MHz IC=500mA, VCE=10V, f=0.5MHz