DCCOM MPSA56

DC COMPONENTS CO., LTD.
R
MPSA56
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Emitter
2 = Base
3 = Collector
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
o
Absolute Maximum Ratings(TA=25
Characteristic
C)
.500
Min
(12.70)
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-4
V
Collector Current (DC)
IC
-500
mA
Collector Current (pulse)
IC
-1000
mA
Total Power Dissipation
PD
625
mW
Junction Temperature
+150
o
-55 to +150
o
TJ
Storage Temperature
TSTG
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
3 2 1
.148(3.76)
.132(3.36)
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Volatge
Characteristic
BVCBO
-80
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
-80
-
-
V
IC=-1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
-4
-
-
V
IE=-100µA, IC=0
ICBO
-
-
-0.1
µA
VCB=-80V, IE=0
Collector Cutoff Current
Test Conditions
IC=-100µA, IE=0
ICEO
-
-
-0.1
µA
VCE=-60V, IB=0
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
-
-0.25
V
IC=-100mA, IB=-10mA
Base-Emitter On Voltage(1)
VBE(on)
-
-
-1.2
V
IC=-100mA, VCE=-1V
hFE1
50
-
-
-
IC=-10mA, VCE=-1V
hFE2
50
-
-
-
IC=-100mA, VCE=-1V
50
-
-
MHz
DC Current Gain(1)
Transition Frequency
(1)Pulse Test: Pulse Width
fT
380µs, Duty Cycle
2%
IC=-100mA, VCE=-1V, f=1MHz