DC COMPONENTS CO., LTD. R MPSA56 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ o Absolute Maximum Ratings(TA=25 Characteristic C) .500 Min (12.70) Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4 V Collector Current (DC) IC -500 mA Collector Current (pulse) IC -1000 mA Total Power Dissipation PD 625 mW Junction Temperature +150 o -55 to +150 o TJ Storage Temperature TSTG .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -80 - - V Collector-Emitter Breakdown Voltage BVCEO -80 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -4 - - V IE=-100µA, IC=0 ICBO - - -0.1 µA VCB=-80V, IE=0 Collector Cutoff Current Test Conditions IC=-100µA, IE=0 ICEO - - -0.1 µA VCE=-60V, IB=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.25 V IC=-100mA, IB=-10mA Base-Emitter On Voltage(1) VBE(on) - - -1.2 V IC=-100mA, VCE=-1V hFE1 50 - - - IC=-10mA, VCE=-1V hFE2 50 - - - IC=-100mA, VCE=-1V 50 - - MHz DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width fT 380µs, Duty Cycle 2% IC=-100mA, VCE=-1V, f=1MHz