DC COMPONENTS CO., LTD. DMBT2222A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 3 .063(1.60) .055(1.40) 1 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .108(0.65) .089(0.25) 2 .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .0043(0.11) .0035(0.09) .051(1.30) .035(0.90) .026(0.65) .010(0.25) C .004 Max (0.10) .027(0.67) .013(0.32) Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 75 - - V IC=10µA Collector-Emitter Breakdown Voltage BVCEO 40 - - V IC=10mA Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA ICBO - - 10 nA VCB=60V ICEX - - 10 nA VCE=60V, VEB(off)=3V Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage (1) DC Current Gain Transition Frequency (1)Pulse Test: Pulse Width IEBO - - 10 nA VEB=3V VCE(sat)1 - - 0.5 V IC=380mA, IB=10mA VCE(sat)2 - - 1.0 V IC=500mA, IB=50mA VBE(sat)1 - - 1.2 V IC=150mA, IB=15mA VBE(sat)2 - - 2.0 V IC=500mA, IB=50mA hFE1 35 - - - IC=0.1mA, VCE=10V hFE2 50 - - - IC=1mA, VCE=10V hFE3 75 - - - IC=10mA, VCE=10V hFE4 100 - 300 - IC=150mA, VCE=10V hFE5 40 - - - IC=500mA, VCE=10V fT 380µs, Duty Cycle 300 2% - - MHz IC=20mA, VCE=20V, f=100MHz