DC COMPONENTS CO., LTD. 2SC4242 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high speed switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405(10.28) .380(9.66) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 450 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V IC 7 A Collector Current Base Current IB 2 A Total Power Dissipation(TC=25 C) PD 40 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .625(15.87) .570(14.48) .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 450 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 450 - - V IC=100mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 10 - - V IE=1mA, IC=0 IC=1mA, IE=0 Collector Cutoff Current ICBO - - 100 µA VCB=450V, IE=0 Emitter Cutoff Current IEBO - - 100 µA VEB=10V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.8 V IC=4A, IB=0.8A Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=4A, IB=0.8A hFE1 15 - 55 - IC=0.8A, VCE=5V DC Current Gain (1) (1)Pulse Test: Pulse Width hFE2 10 - - - IC=2A, VCE=5V hFE3 10 - - - IC=4A, VCE=5V 380µs, Duty Cycle 2% Classification of hFE1 Rank A B1 B2 B3 B4 Range 15~28 22~35 29~42 36~49 43~55