DC COMPONENTS CO., LTD. LB123T DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-126 Pinning .304(7.72) .285(7.52) 1 = Emitter 2 = Collector 3 = Base .105(2.66) .095(2.41) .041(1.05) .037(0.95) .154(3.91) .150(3.81) o Absolute Maximum Ratings(TA=25 Characteristic C) Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 8 V Collector Current(DC) IC 1 A Collector Current(Pluse) IC 2 A Total Power Dissipation PD 3.5 W Total Power Dissipation(TC=25 C) PD 30 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .152(3.86) .138(3.50) .055(1.39) .045(1.14) .279(7.09) .275(6.99) o 1 3 Typ 2 3 o 3 Typ .052(1.32) .048(1.22) .620(15.75) .600(15.25) .022 (0.55) Typ .032(0.81) .028(0.71) .189(4.80) .171(4.34) C o 3 Typ C Dimensions in inches and (millimeters) Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 600 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 400 - - V IC=10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 8 - - V IE=1mA, IC=0 Collector Cutoff Current ICBO - - 10 µA VCB=600V, IE=0 Emitter Cutoff Current IEBO - - 10 µA VBE=9V, IC=0 Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) VCE(sat)1 - - 0.8 V IC=0.1A, IB=10mA VCE(sat)2 - - 0.9 V IC=0.3A, IB=30mA VBE(sat)1 - - 1.2 V IC=0.1A, IB=10mA VBE(sat)2 - - 1.8 V IC=0.3A, IB=30mA hFE1 10 - 50 - IC=0.3A, VCE=5V hFE2 10 - - - IC=0.5A, VCE=5V hFE3 6 - - - IC=1A, VCE=5V (1) DC Current Gain (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE1 Rank B1 B2 Range 10~17 13~22 B3 18~27 o 3 Typ B4 B5 B6 B7 B8 23~32 28~37 33~42 38~47 43~50