DCCOM LB123T

DC COMPONENTS CO., LTD.
LB123T
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high voltage, high speed switching
circuits, and amplifier applications.
TO-126
Pinning
.304(7.72)
.285(7.52)
1 = Emitter
2 = Collector
3 = Base
.105(2.66)
.095(2.41)
.041(1.05)
.037(0.95)
.154(3.91)
.150(3.81)
o
Absolute Maximum Ratings(TA=25
Characteristic
C)
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
8
V
Collector Current(DC)
IC
1
A
Collector Current(Pluse)
IC
2
A
Total Power Dissipation
PD
3.5
W
Total Power Dissipation(TC=25 C)
PD
30
W
Junction Temperature
TJ
+150
o
-55 to +150
o
o
Storage Temperature
TSTG
.152(3.86)
.138(3.50)
.055(1.39)
.045(1.14)
.279(7.09)
.275(6.99)
o
1
3 Typ
2 3
o
3 Typ
.052(1.32)
.048(1.22)
.620(15.75)
.600(15.25)
.022
(0.55)
Typ
.032(0.81)
.028(0.71)
.189(4.80)
.171(4.34)
C
o
3 Typ
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
600
-
-
V
IC=1mA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO
400
-
-
V
IC=10mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
8
-
-
V
IE=1mA, IC=0
Collector Cutoff Current
ICBO
-
-
10
µA
VCB=600V, IE=0
Emitter Cutoff Current
IEBO
-
-
10
µA
VBE=9V, IC=0
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
VCE(sat)1
-
-
0.8
V
IC=0.1A, IB=10mA
VCE(sat)2
-
-
0.9
V
IC=0.3A, IB=30mA
VBE(sat)1
-
-
1.2
V
IC=0.1A, IB=10mA
VBE(sat)2
-
-
1.8
V
IC=0.3A, IB=30mA
hFE1
10
-
50
-
IC=0.3A, VCE=5V
hFE2
10
-
-
-
IC=0.5A, VCE=5V
hFE3
6
-
-
-
IC=1A, VCE=5V
(1)
DC Current Gain
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
Classification of hFE1
Rank
B1
B2
Range
10~17
13~22
B3
18~27
o
3 Typ
B4
B5
B6
B7
B8
23~32
28~37
33~42
38~47
43~50