DC COMPONENTS CO., LTD. MPSA43 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 200 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 200 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 6 - - V IE=10µA, IC=0 IC=100µA, IE=0 Collector Cutoff Current ICBO - - 0.1 µA VCB=200V, IE=0 Emitter Cutoff Current IEBO - - 0.1 µA VEB=6V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.4 V IC=20mA, IB=2mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 0.9 V IC=20mA, IB=2mA hFE1 25 - - - IC=1mA, VCE=10V (1) DC Current Gain hFE2 40 - - - IC=10mA, VCE=10V hFE3 40 - - - IC=30mA, VCE=10V Transition Frequency fT 50 - - MHz Output Capacitance Cob - - 4 pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% IC=10mA, VCE=20V, f=100MHz VCB=20V, f=1MHz