SEME-LAB 2N6782_01

2N6782
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
ENHANCEMENT MODE
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
0.89 max.
(0.035)
12.70
(0.500)
min.
APPLICATIONS
0.41 (0.016)
0.53 (0.021)
dia.
• FAST SWITCHING
• MOTOR CONTROLS
5.08 (0.200)
typ.
• POWER SUPPLIES
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
45°
TO39 Package (TO-205AF)
Pin 1 - Source
Underside View
Pin 2 - Gate
Pin 3 - Drain and Case
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS
Drain Source Voltage
100V
VDGR
Drain Gate Voltage (RGS = 1MΩ)
100V
ID @Tcase = 25°C
Continuous Drain Current
3.5A
ID @Tcase = 100°C
2.25A
IDM
Continuous Drain Current
Pulsed Drain Current 1
VGS
Gate Source Voltage
±20V
PD@ Tcase = 25°C
Maximum Power Dissipation
15W
PD@ Tcase = 100°C
Maximum Power Dissipation
6W
Junction to Case
Linear Derating Factor
0.12W/°C
Junction to ambient
Linear Derating Factor
0.005W/°C
TJ,Tstg
Operating and Storage Temperature Range
Lead Temperature
1 ”
( 16 from case for 10 secs)
14A
-55 to +150°C
300°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3093
Issue 1
2N6782
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSSF
Gate Body Leakage Forward
IGSSR
Gate Body Leakage Reverse
IDSS
ID(on)
VDS(on)
RDS(on)
Zero Gate Voltage Drain Current
On State Drain Current1
Static Drain Source On-State
Voltage1
Static Drain Source On-State
VGS = 0
ID = 0.25mA
VDS = VGS
ID = 0.5A
2*
4.0*
VDS = 0
TA = 125°C
1*
4.0*
100*
V
VGS = 20V
100*
VDS = 0
TA = 125°C
200*
VGS = -20V
VDS = 80V.
VGS =0
0.25*
VDS = 100v
VGS = 0
1*
TC = 125°C
1
VGS = 10V
A
2.1*
V
ID = 3.5A
VGS = 10V
ID = 2.25A
0.6*
TC = 125°C
1.08*
VDS = 5V
IDS = 2.25A
VGS = 0
VDS = 25V
gfs
Forward Transductance 1
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn–On Delay Time
VDD = 34V
ID = 2.25A
15*
tr
Rise Time
RG = 50Ω
RL = 15Ω
25*
td(off)
Turn–Off Delay Time
(MOSFET switching times are essentially
25*
tf
Fall Time
independent of operating temperature.)
20*
f = 1MHz
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
Modified MOS POWER
Continuous Source Current Body
Diode
symbol showing the intergal
ISM
Source Current1 (Body Diode)
P-N junction rectifier.
VSD
Diode Forward Voltage 1
trr
Reverse Recovery Time
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
IS = 3.5A
1.0*
3.0*
60*
200*
40*
100*
10*
25*
Ω
V
Ω
S( )
pF
ns
,
3.5*
A
14
A
1.5*
V
/
5
VGS = 0
TJ = 25°C
IF =IS
mA
3.5
VGS = 10V
Resistance1
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction – Case
RθJA Thermal Resistance Junction – Ambient
nA
-100*
DYNAMIC CHARACTERISTICS
IS
V
TJ = 25°C
di / dt = 100A/µs
Free Air Operation
nS
200
8.33*
175
°C\W
* JEDEC registered Values
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 3093
Issue 1