东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT—23 2SA1235A TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: -0.2 A Collector-base voltage V (BR) CBO: -60 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．９ ２．４ １．３ Unit : mm unless Test otherwise specified） conditions Collector-base breakdown voltage V (BR) CBO IC = -100 μA， Collector-emitter breakdown voltage V (BR) CEO Emitter-base breakdown voltage V(BR)EBO MIN MAX UNIT -60 V IC = -100 μA， IB=0 -50 V IE= -100 μA， IC=0 -6 V IE=0 Collector cut-off current ICBO VCB= -60 V, IE =0 -0.1 μA Emitter cut-off current IEBO VEB= -6V, IC =0 -0.1 μA hFE（1） VCE= -6V, IC= -1mA 150 500 DC current gain hFE（2） VCE= -6V, IC = -0.1mA 90 Collector-emitter saturation voltage VCE (sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE (sat) IC= -100mA, IB= -10mA -1 V Transition frequency fT VCE= -6V, IC = -10mA Collector output capacitance Cob Noise figure NF 180 VCE=-6V， IE=0，f=1MHz VCE=-6 V ， I E=0.3mA, f=100Hz ， RG=10K? CLASSIFICATION OF hFE (1) Rank E F Range 150~300 250~500 M •E M •F Marking MHz 5 dB 20 dB SOT-23 PACKAGE OUTLINE DIMENSIONS D θ b L E E1 L1 0.2 e C Symbol A A1 A2 e1 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 1.800 L 0.100 0.037TPY 0.950TPY 2.000 0.071 0.550REF 0.079 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°