ETC P4C1682

P4C1681, P4C1682
P4C1681, P4C1682
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
FEATURES
Separate Inputs and Outputs
– P4C1681 Input Data at Outputs during Write
– P4C1682 Outputs in High Z during Write
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 12/15/20/25 ns (Commercial)
– 20/25/35ns (P4C1682 Military)
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil DIP
– 24-Pin 300 mil SOIC
– 24-Pin 300 mil SOJ
– 24-Pin CERDIP
– 28-Pin LCC (450 mil x 450 mil)
Low Power Operation (Commercial)
– 715 mW Active – 12, 15
– 550 mW Active – 20/25/35
– 193 mW Standby (TTL Input)
– 83 mW Standby (CMOS Input)
Single 5V ± 10%Power Supply
DESCRIPTION
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby. For the P4C1682 and
P4C1681,
power is only 83 mW standby with CMOS input
.
levels.
The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra
high speed static RAMs similar to the P4C168, but with
separate data I/O pins. The P4C1681 features a
transparent write operation; the outputs of the P4C1682
are in high impedance during the write cycle. All devices
have low power standby modes. The RAMs operate from
a single 5V ± 10% tolerance power supply.
The P4C1681 and P4C1682 are available in 24-pin 300
mil DIP and SOIC packages providing excellent board
level densities. The P4C1682 is also available in a 28-pin
LCC package.
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
FUNCTIONAL BLOCK DIAGRAM
I1
I2
I3
I4
INPUT
DATA
CONTROL
COLUMN I/O
O1
O2
O3
O4
VCC
23
A11
A2
3
22
A10
A3
4
21
A9
A4
5
20
A8
A5
6
19
I4
A6
7
18
7
23
I4
NC
8
22
NC
O4
A6
9
21
A7
10
20
NC
I3
I1
11
NC
I3
9
16
10
15
O3
O2
CE
CE
11
14
O1
WE
GND
12
13
WE
(5)
A
P4C1682
DIP (P4,D4), SOIC (S4), SOJ (J4)
TOP VIEW
P4C1681
28 27
2
A9
A8
6
I2
A
3
24
A5
I1
COLUMN
SELECT
26
5
8
POWER
DOWN
4
A4
A7
17
A11
24
2
A 10
1
A1
1
25
19
O4
13 14 15 16 17
12
18
O2
O3
A
A0
A0
VCC
16,384-BIT
MEMORY
ARRAY
ROW
SELECT
I2
CE
GND
WE
O1
A
(7)
A3
A2
A1
PIN CONFIGURATIONS
LCC (L5-1)
TOP VIEW
Means Quality, Service and Speed
1Q97
41
P4C1681, P4C1682
MAXIMUM RATINGS1
Symbol
Parameter
Value
Unit
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
VTERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
VCC +0.5
V
TA
Operating Temperature
–55 to +125
°C
Symbol
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade(2)
Ambient
Temperature
GND
VCC
0V
0V
5.0V ± 10%
5.0V ± 10%
Military
–55°C to +125°C
0°C to +70°C
Commercial
Parameter
Value
Unit
TBIAS
Temperature Under
Bias
–55 to +125
°C
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
50
mA
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz
Symbol
Parameter
Conditions Typ. Unit
CIN
Input Capacitance
VIN = 0V
5
pF
COUT
Output Capacitance VOUT = 0V
7
pF
DC ELECTRICAL CHARACTERISTICS
Over Recommended operating temperature and supply voltages(2)
Sym.
Parameter
P4C1681
P4C1682
Min
Max
Test Conditions
Unit
VIH
Input High Voltage
2.2
VCC +0.5
V
VIL
Input Low Voltage
–0.5(3)
0.8
V
VHC
CMOS Input High Voltage
VLC
CMOS Input Low Voltage
VCD
Input Clamp Diode Voltage
VOL
VCC –0.2 VCC +0.5
–0.5(3)
V
0.2
V
VCC = Min., IIN = –18 mA
–1.2
V
Output Low Voltage
(TTL Load)
IOL = +8 mA, VCC = Min.
0.4
V
VOLC
Output Low Voltage
(CMOS Load)
IOLC = +100 µA, VCC = Min.
0.2
V
VOH
Output High Voltage
(TTL Load)
IOH = –4 mA, VCC = Min.
VOHC
Output High Voltage
(CMOS Load)
IOHC = –100 µA, VCC = Min.
ILI
Input Leakage Current
VCC = Max.
VIN = GND to VCC
Mil.
Comm'l
ILO
Output Leakage Current
VCC = Max.
CE = VIH
VOUT = GND to VCC
Mil.
Comm'l
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2.4
V
VCC –0.2
V
–10
–5
–10
–5
+10
+5
µA
µA
+10
+5
µA
µA
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
42
P4C1681, P4C1682
POWER DISSIPATION CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Symbol
ICC
Parameter
Test Conditions
P4C1681
P4C1682
Min
Max
Unit
Dynamic Operating
Current – 12, 15
VCC = Max., f = Max.,
Outputs Open
Comm'l
—
130
mA
ICC
Dynamic Operating
Current – 20, 25, 35
VCC = Max., f = Max.,
Outputs Open
Mil.
Comm'l
–
—
130
100
mA
mA
ISB
Standby Power Supply
Current (TTL Input Levels)
CE ≥ VIH,
VCC = Max.,
f = Max., Outputs Open
—
35
mA
Standby Power Supply
Current
(CMOS Input Levels)
CE ≥ VHC,
VCC = Max.,
f = 0, Outputs Open,
VIN ≤ VLC or VIN ≥ VHC
—
15
mA
ISB1
43
P4C1681, P4C1682
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol
-12
Parameter
-15
Min Max
-20
-25
Min Max Min Max Min
12
15
20
-35
Max Min Max
tRC
Read Cycle Time
tAA
Address Access
Timens
12
15
20
25
35
ns
tAC
Chip Enable
Access Time
12
15
20
25
35
ns
tOH
Output Hold from
Address Change
2
2
3
3
3
ns
tLZ
Chip Enable to
Output in Low Z
2
2
3
3
3
ns
tHZ
Chip Disable to
Output in High Z
tRCS
Read Command
Setup Time
0
0
0
0
0
ns
tRCH
Read Command
Hold Time
0
0
0
0
0
ns
tPU
Chip Enable to
Power Up Time
0
0
0
0
0
ns
tPD
Chip Disable to
Power Down Time
6
25
7
12
9
15
35
Unit
10
20
25
ns
15
ns
25
ns
1552 Tbl 10
READ CYCLE NO. 1 (ADDRESS controlled)(5, 6)
t RC
(9)
ADDRESS
t AA
t OH
PREVIOUS DATA VALID
DATA OUT
DATA VALID
CE controlled)(5, 7)
READ CYCLE NO. 2 (CE
tRC
CE
t HZ
t AC
t LZ
DATA VALID
DATA OUT
I CC
VCC SUPPLY
CURRENT
(8)
(3)
t PU
HIGH IMPEDANCE
t PD
I SB
t RCH
t RCS
WE
8. Transition is measured ±200mV from steady state voltage prior to
change, with loading as specified in Figure 1.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
Notes:
5. WE is HIGH for READ cycle.
6. CE, OE are LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with, CE
transition LOW.
44
P4C1681, P4C1682
AC ELECTRICAL CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol
†
£
-12
Parameter
-15
-20
-25
Min Max
Min Max Min Max Min
-35
Max Min Max
Unit
tWC
Write Cycle Time
12
15
18
20
30
ns
tCW
Chip Enable Time
to End of Write
12
15
18
20
25
ns
tAW
Address Valid to
End of Write
12
15
18
20
25
ns
tAS
Address Set-up
Time
0
0
0
0
0
ns
tWP
Write Pulse Width
12
15
18
20
25
ns
tAH
Address Hold
Time
0
0
0
0
0
ns
tDW
Data Valid to
End of Write
7
8
10
10
15
ns
tDH
Data Hold Time
0
0
0
0
0
ns
tWZ
Write Enable to
Output in High Z†
tOW
Output Active to
End of Write
tAWE
Write Enable to
Data-out Valid£
12
15
20
25
30
ns
tADV
Data-in Valid to
Data-out Valid
12
15
20
25
30
ns
4
0
5
7
0
0
7
13
0
0
ns
ns
P4C1682 only.
P4C1681 only.
WE controlled)(10)
WRITE CYCLE NO. 1 (WE
t WC
(12)
ADDRESS
t CW
CE
t AW
t WR
t AH
t WP
WE
t AS
t DW
DATA IN
DATA VALID
(8,11)
(8)
t OW
t WZ
DATA OUT
P4C1682
t DH
DATA UNDEFINED
t ADV(8)
HIGH IMPEDANCE
t AWE
DATA OUT
P4C1681
DATA VALID
Notes:
10. CE and WE must be LOW for WRITE cycle.
11. If CE goes HIGH simultaneously with WE HIGH, the output
remains in a high impedance state.
12. Write Cycle Time is measured from the last valid address to the
first transitioning address.
45
P4C1681, P4C1682
TEMPERATURE RANGE SUFFIX
PACKAGE SUFFIX
Package
Suffix
P
J
D
S
L
Temperature
Range Suffix
Description
C
Plastic DIP, 300 mil wide standard
Plastic SOJ
CERDIP, 300 mil wide standard
Small Outline IC
LCC Package
Description
Commercial Temperature Range,
–0°C to +70°C.
Military Temperature Range,
–55°C to +125°C.
Mil. Temp. with MIL-STD-883C
Class D compliance
M
MB
ORDERING INFORMATION
P4C
P4C
1681
1682
l
—
ss
p
t
Temperature Range
Package Code
Speed (Access/Cycle Time)
Low Power Designator
Blank = None; L = Low Power
Device Number
Static RAM Prefix
l = Ultra-low standby power designator L, if available.
ss = Speed (access/cycle time in ns), e.g., 25, 35
p = Package code, i.e., P, D, S, L.
t = Temperature range, i.e., C, M, MB.
SELECTION GUIDE
The P4C1681 and P4C1682 are available in the following temperature, speed and package options.
Temperature
Range
Package
Commercial
Plastic DIP
SOIC
SOJ
Speed (ns)
12
15
20
25
35
-12PC
-12SC
-12JC
-15PC
-15SC
-15JC
-20PC
-20SC
-20JC
-25PC
-25SC
-25JC
N/A
N/A
N/A
-20LM
-20DM
-25LM
-25DM
-35LM
-35DM
(P4C1682 Only)
CERDIP
N/A
N/A
N/A
N/A
Military
Processed*
LCC
CERDIP
N/A
N/A
N/A
N/A
Military Temp. LCC
(P4C1682 Only)
* Military temperature range with MIL-STD-883 Revision D, Class B processing.
N/A = Not available
46
-20LMB -25LMB -35LMB
-20DMB -25DMB -35DMB