CSD17308Q3 www.ti.com SLPS262A – FEBRUARY 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17308Q3 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 3.3-mm × 3.3-mm Plastic Package The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. Top View 3.9 nC Qgd Gate Charge Gate to Drain Drain to Source On Resistance 0.8 nC VGS = 3V 12.5 mΩ VGS = 4.5V 9.4 mΩ VGS = 8V 8.2 mΩ Threshold Voltage 1.3 V Device Package Media CSD17308Q3 SON 3.3-mm × 3.3-mm Plastic Package 13-Inch Reel Qty Ship 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 47 A Continuous Drain Current(1) 13 A IDM Pulsed Drain Current, TA = 25°C(2) 78 A PD Power Dissipation(1) 2.7 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 36A, L = 0.1mH, RG = 25Ω 65 mJ ID D S 7 D S 6 D 5 D (1) Typical RqJA = 46°C/W when mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing Text_Added_For_Spacing_Text_Added_For_Spacing D G V Gate Charge Total (4.5V) ORDERING INFORMATION DESCRIPTION 8 30 Qg VGS(th) Notebook Point of Load Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems S Drain to Source Voltage RDS(on) APPLICATIONS • • VDS P0095-01 RDS(on) vs VGS GATE CHARGE 8 ID = 10A VGS - Gate-to-Source Voltage - V RDS(on) - On-State Resistance - mΩ 30 25 20 T C = 125°C 15 10 T C = 25°C 5 ID = 10A VDS = 15V 7 6 5 4 3 2 1 0 0 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage - V 9 10 G006 0 1 2 3 4 5 Qg - Gate Charge - nC 6 7 G003 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated CSD17308Q3 SLPS262A – FEBRUARY 2010 – REVISED OCTOBER 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 24V IGSS Gate to Source Leakage Current VDS = 0V, VGS = +10 / –8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250mA 30 0.9 Drain to Source On Resistance gfs Transconductance mA 100 nA 1.3 1.8 V 12.5 16.5 mΩ VGS = 4.5V, ID = 10A 9.4 11.8 mΩ VGS = 8V, ID = 10A 8.2 10.3 mΩ VDS = 15V, ID = 10A 37 VGS = 3V, ID = 10A RDS(on) V 1 S Dynamic Characteristics CISS Input Capacitance 540 700 pF COSS Output Capacitance CRSS Reverse Transfer Capacitance 280 365 pF 27 35 Rg pF Series Gate Resistance 0.9 1.8 Ω Qg Gate Charge Total (4.5V) 3.9 5.1 nC Qgd Gate Charge Gate to Drain 0.8 nC Qgs Gate Charge Gate to Source 1.3 nC Qg(th) Gate Charge at Vth 0.7 nC QOSS Output Charge 7.4 nC td(on) Turn On Delay Time 4.5 ns tr Rise Time 5.7 ns td(off) Turn Off Delay Time 9.9 ns tf Fall Time 2.3 ns VGS = 0V, VDS = 15V, f = 1MHz VDS = 15V, ID = 10A VDS = 13V, VGS = 0V VDS = 15V, VGS = 4.5V, ID = 10A, RG = 2Ω Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time IDS = 10A, VGS = 0V 0.85 VDD = 13V, IF = 10A, di/dt = 300A/ms 1 V 9.3 nC 14.3 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) MAX UNIT RqJC Thermal Resistance Junction to Case (1) PARAMETER 4.5 °C/W RqJA Thermal Resistance Junction to Ambient (1) (2) 58 °C/W (1) (2) 2 MIN TYP RqJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17308Q3 CSD17308Q3 www.ti.com SLPS262A – FEBRUARY 2010 – REVISED OCTOBER 2010 GATE GATE Source Source Max RqJA = 58°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. Max RqJA = 165°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. DRAIN DRAIN M0161-02 M0161-01 Text Added For Spacing Text Added For Spacing Text Added For Spacing Text Added For Spacing TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA - Normalized Thermal Impedance 10 1 0.5 0.3 0.1 Duty Cycle = t1/t2 0.1 0.05 P 0.02 0.01 0.01 t1 t2 Single Pulse Typical RqJA = 132°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA 0.001 0.001 0.01 0.1 1 tp - Pulse Duration - s 10 100 1k G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17308Q3 3 CSD17308Q3 SLPS262A – FEBRUARY 2010 – REVISED OCTOBER 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 30 30 VDS = 5V IDS - Drain-to-Source Current - A IDS - Drain-to-Source Current - A VGS = 8V 25 VGS = 4.5V 20 VGS = 2.5V 15 VGS = 3.5V 10 VGS = 3V 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDS - Drain-to-Source Voltage - V 0.9 15 T C = 25°C 10 T C = -55°C 5 1 1.2 1.4 G001 1.6 1.8 2 2.2 2.4 2.6 VGS - Gate-to-Source Voltage - V 2.8 3 G002 Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1.4 ID = 10A VDS = 15V 7 f = 1MHz VGS = 0V 1.2 6 C - Capacitance - nF VGS - Gate-to-Source Voltage - V T C = 125°C 1 8 5 4 3 2 1 Coss = Cds + Cgd 0.8 Ciss = Cgd + Cgs 0.6 0.4 Crss = Cgd 0.2 1 0 0 0 1 2 3 4 5 Qg - Gate Charge - nC 6 7 0 10 15 20 VDS - Drain-to-Source Voltage - V 25 Figure 4. Gate Charge Figure 5. Capacitance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 30 G004 30 RDS(on) - On-State Resistance - mΩ ID = 250µA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -75 5 G003 1.6 VGS(th) - Threshold Voltage - V 20 0 0 ID = 10A 25 20 T C = 125°C 15 10 T C = 25°C 5 0 -25 25 75 T C - Case Temperature - °C 125 175 0 1 G005 Figure 6. Threshold Voltage vs. Temperature 4 25 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage - V 9 10 G006 Figure 7. On-State Resistance vs. Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17308Q3 CSD17308Q3 www.ti.com SLPS262A – FEBRUARY 2010 – REVISED OCTOBER 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 100 ID = 10A VGS = 8V 1.4 ISD - Source-to-Drain Current - A Normalized On-State Resistance 1.6 1.2 1 0.8 0.6 0.4 0.2 -75 1 T C = 125°C 0.1 T C = 25°C 0.01 0.001 0.0001 -25 25 75 T C - Case Temperature - °C 125 0 175 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage - V G007 1 Figure 8. Normalized On-State Resistance vs. Temperature Figure 9. Typical Diode Forward Voltage TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1k 100 10 1ms 10ms 1 11110 100ms Area Limited by RDS(on) 0.1 0.01 0.01 1.2 G008 100 I(AV) - Peak Avalanche Current - A IDS - Drain-to-Source Current - A 10 1s Single Pulse Typical R θJA = 132°C/W (min Cu) DC 0.1 1 10 VDS - Drain-to-Source Voltage - V 100 T C = 25°C 10 T C = 125°C 1 0.01 0.1 1 10 t(AV) - Time in Avalanche - ms G009 Figure 10. Maximum Safe Operating Area 100 G010 Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING IDS - Drain-to-Source Current - A 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 T C - Case Temperature - °C 150 175 G011 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17308Q3 5 CSD17308Q3 SLPS262A – FEBRUARY 2010 – REVISED OCTOBER 2010 www.ti.com MECHANICAL DATA Q3 Package Dimensions D2 D H L 1 2 7 3 6 4 5 5 4 3 b E2 E 6 e E 7 2 8 8 1 q L1 Top View A1 Bottom View A Side View c D Front View M0142-01 DIM MILLIMETERS MIN NOM MAX MIN NOM MAX A 0.950 1.000 1.100 0.037 0.039 0.043 A1 0.000 0.000 0.050 0.000 0.000 0.002 b 0.280 0.340 0.400 0.011 0.013 0.016 c 0.150 0.200 0.250 0.006 0.008 0.010 D 3.200 3.300 3.400 0.126 0.130 0.134 D1 – – – – – – D2 1.650 1.750 1.800 0.065 0.069 0.071 E 3.200 3.300 3.400 0.126 0.130 0.134 E1 – – – – – – E2 2.350 2.450 2.550 0.093 0.096 0.100 e 6 INCHES 0.650 TYP 0.026 H 0.35 0.450 0.550 0.014 0.018 0.022 L 0.35 0.450 0.550 0.014 0.018 0.022 L1 – – – – – – q – – – – – – Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17308Q3 CSD17308Q3 www.ti.com SLPS262A – FEBRUARY 2010 – REVISED OCTOBER 2010 2.31 1 8 8 1 0.65 Typ. 2.45 5 4 5 3.50 0.56 0.41 4 0.50 Typ. Recommended PCB Pattern 0.63 M0143-01 Note: All dimensions are in mm, unless otherwise specified. For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. 1.75 ±0.10 Text Added For Spacing Text Added For Spacing Q3 Tape and Reel Information 4.00 ±0.10 (See Note 1) 2.00 ±0.05 Ø 1.50 +0.10 –0.00 1.30 3.60 5.50 ±0.05 12.00 +0.30 –0.10 8.00 ±0.10 3.60 M0144-01 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm, unless otherwise specified. 5. Thickness: 0.30 ±0.05mm 6. MSL1 260°C (IR and convection) PbF reflow compatible Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17308Q3 7 CSD17308Q3 SLPS262A – FEBRUARY 2010 – REVISED OCTOBER 2010 www.ti.com REVISION HISTORY Changes from Original (February 2010) to Revision A • 8 Page Deleted the Package Marking Information section ............................................................................................................... 7 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17308Q3 PACKAGE MATERIALS INFORMATION www.ti.com 21-Jan-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD17308Q3 Package Package Pins Type Drawing SON DQG 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.8 Pack Materials-Page 1 3.6 B0 (mm) K0 (mm) P1 (mm) 3.6 1.2 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 21-Jan-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD17308Q3 SON DQG 8 2500 335.0 335.0 32.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications. TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products Applications Audio www.ti.com/audio Communications and Telecom www.ti.com/communications Amplifiers amplifier.ti.com Computers and Peripherals www.ti.com/computers Data Converters dataconverter.ti.com Consumer Electronics www.ti.com/consumer-apps DLP® Products www.dlp.com Energy and Lighting www.ti.com/energy DSP dsp.ti.com Industrial www.ti.com/industrial Clocks and Timers www.ti.com/clocks Medical www.ti.com/medical Interface interface.ti.com Security www.ti.com/security Logic logic.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Power Mgmt power.ti.com Transportation and Automotive www.ti.com/automotive Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com Wireless www.ti.com/wireless-apps RF/IF and ZigBee® Solutions www.ti.com/lprf TI E2E Community Home Page e2e.ti.com Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2011, Texas Instruments Incorporated