HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 G Preliminary data sheet S Symbol Test Conditions = 480 V = 80 A = 45 mW RDS(on) D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25°C to 150°C 480 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 480 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C, Chip capability 80 A IDM TC = 25°C, pulse width limited by TJM 320 A I AR TC = 25°C 80 A EAR TC = 25°C 64 mJ EAS TC = 25°C 6 J dv/dt I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 700 W -55 ... +150 °C Features TJM 150 °C Tstg -55 ... +150 °C International standard packages miniBLOC, with Aluminium nitride 2500 3000 V~ V~ TJ VISOL 50/60 Hz, RMS I ISOL £ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA 480 VGH(th) VDS = VGS, ID = 8 mA 2 I GSS VGS = ±20 VDC, VDS = 0 I DSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C V S G S D G = Gate S = Source D = Drain Either Source terminal of miniBLOC can be used as Main or Kelvin Source isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies 4 V ±200 nA DC choppers Temperature and lighting controls 100 2 mA mA Advantages 45 mW Easy to mount Space savings High power density 98724 (05/31/00) IXFN 80N48 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 0.5 ID25, pulse test 50 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 70 S 9890 pF 1750 pF Crss 460 pF td(on) 61 ns 70 ns 102 ns 27 ns 380 nC 80 nC 173 nC tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.18 RthCK K/W 0.05 Source-Drain Diode K/W miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Min. Inches Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD I F = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % t rr QRM IRM I F = 50A, -di/dt = 100 A/ms, VR = 100 V 1.2 8 80 A 320 A 1.3 V 250 ns mC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025