High Voltage Power MOSFETs V DSS I D25 VDS(on) IXTH 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 1200 V = 3A = 4.5 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 3N120 3N110 1200 1100 V V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR EAR 3 A 12 A TC = 25°C 3 A TC = 25°C 20 mJ 700 mJ 5 V/ns 150 W -55 to +150 °C EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM 150 °C Tstg -55 to +150 °C 300 °C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight 6 g TO-247 G VDSS VGS(th) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2003 IXYS All rights reserved D = Drain TAB = Drain Features z z z z International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Advantages z z Test Conditions D (TAB) S G = Gate S = Source z Symbol D Easy to mount Space savings High power density Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 125°C 4.5 V V ±100 nA 25 1 µA mA 4.5 Ω DS99025(03/03) IXTH 3N120 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 0.5 • ID25, Note 1 1.5 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 2.2 S 1050 1300 pF 100 125 pF Crss 25 td(on) 17 50 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns RG = 4.7 Ω (External), 32 ns tf 18 ns Qg(on) 39 nC VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 9 nC 22 nC RthJC 0.8 RthCK 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 A Repetitive; pulse width limited by TJM 12 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 700 2 3 ns td(off) Qgs 1 pF tr Qgd TO-247 AD Outline Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC ns Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTH 3N120 4.0 5 TJ = 25OC 3.0 6V ID - Amperes ID - Amperes 4 3 2 2.5 2.0 5V 1.5 1.0 1 0 5V 0 2 4 6 8 0.5 0.0 10 12 14 16 18 20 4V 0 3 6 Fig.1 Output Characteristics @ Tj = 25°C 2.8 VGS = 10V VGS = 10V 2.5 O TJ = 125 C RDS(ON) - Normalized RDS(ON) - Normalized 12 15 18 21 24 27 30 Fig. 2 Output Characteristics @ Tj = 125°C 2.50 2.25 9 VDS - Volts VDS - Volts 2.00 1.75 1.50 1.25 TJ = 25OC 1.00 0.75 VGS = 9V 8V 7V 6V TJ = 125OC 3.5 VGS = 9V 8V 7V 2.2 ID = 3A 1.9 ID =1.5A 1.6 1.3 0 1 2 3 4 1.0 25 5 50 ID - Amperes 75 100 125 150 TJ - Degrees C Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 4.0 3.0 3.5 2.5 ID - Amperes ID - Amperes 3.0 2.5 2.0 1.5 2.0 1.5 TJ = 125oC 1.0 1.0 TJ = 25oC 0.5 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0.0 3.5 TC - Degrees C Fig. 5 Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 4.0 4.5 5.0 5.5 6.0 VGS - Volts Fig. 6 Drain Current vs Gate Source Voltage IXTH 3N120 12 f = 1MHz Ciss VDS = 600V ID = 1.5A Capacitance - pF VGS - Volts 10 1000 8 6 4 Coss 100 Crss 2 0 0 10 20 30 40 50 10 60 0 5 10 Gate Charge - nC 15 20 25 30 35 40 VDS - Volts Fig. 7 Gate Charge Characteristic Curve Fig. 8 Capacitance Curves 5 VGS = 0V ID - Amperes 4 3 TJ = 125OC TJ = 25OC 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Fig. 9 Drain Current vs Drain to Source Voltage R(th)JC - K/W 1.00 0.10 Single Pulse 0.01 0.00 10-4 10-3 10-2 10-1 100 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 101