IXYS IXFX30N50Q

VDSS
HiPerFETTM
Power MOSFETs
Q-Class
IXFK/IXFX 30N50Q
IXFK/IXFX 32N50Q
ID25
RDS(on)
500 V 30 A 0.16 Ω
500 V 32 A 0.15 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
IDM
TC = 25°C,
30
32
120
128
A
A
A
A
30N50Q
32N50Q
30N50Q
32N50Q
PLUS 247TM
(IXFK)
G
(TAB)
D
TO-264 AA (IXFK)
pulse width limited by TJM
IAR
TC = 25°C
32
A
EAR
TC = 25°C
45
mJ
1500
mJ
5
V/ns
416
W
-55 ... + 150
150
-55 ... + 150
°C
°C
°C
300
°C
1.13/10
Nm/lb.in.
6
4
g
g
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
G
D
G = Gate
S = Source
l
l
l
Test Conditions
VDSS
VGS = 0 V, ID = 250 uA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
© 2002 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
500
2.5
l
l
V
4.5
V
±100
nA
TJ = 25°C
TJ = 125°C
100
1
µA
mA
32N50Q
30N50Q
0.15
0.16
Ω
Ω
S
D = Drain
TAB = Drain
Features
l
Symbol
(TAB)
IXYS advanced low Qg process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
l
l
PLUS 247TM package for clip or spring
mounting
Space savings
High power density
98604D (06/02)
IXFK 30N50Q
IXFX 30N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 ID25
Note 1
28
S
3950
pF
640
pF
Crss
210
pF
td(on)
35
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
18
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
42
ns
td(off)
RG = 2 Ω (External),
75
ns
20
ns
150
nC
26
nC
85
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.3
RthJC
0.15
RthCK
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
t rr
QRM
K/W
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
32
A
128
A
1.5
V
250
ns
0.75
µC
7.5
A
IRM
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFK 32N50Q
IXFX 32N50Q
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFK 30N50Q
IXFX 30N50Q
Figure 1. Output Characteristics at 25OC
80
50
TJ = 125OC
VGS= 9V
8V
7V
40
ID - Amperes
60
ID - Amperes
Figure 2. Output Characteristics at 125OC
VGS=10V
9V
8V
7V
TJ = 25OC
70
IXFK 32N50Q
IXFX 32N50Q
6V
50
40
30
6V
30
5V
20
20
10
5V
10
4V
0
0
4
8
12
16
0
20
0
4
8
VDS - Volts
16
20
VDS - Volts
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
2.8
2.8
VGS = 10V
VGS = 10V
2.4
RDS(ON) - Normalized
RDS(ON) - Normalized
12
Tj=1250 C
2.0
1.6
Tj=250 C
1.2
10
20
30
40
50
ID = 32A
2.0
ID = 16A
1.6
1.2
0.8
25
0.8
0
2.4
60
50
75
100
125
150
TJ - Degrees C
ID - Amperes
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
40
50
IXF_32N50Q
40
IXF_30N50Q
ID - Amperes
ID - Amperes
32
24
16
20
TJ = 25oC
TJ = 125oC
8
10
0
-50
30
-25
0
25
50
75
TC - Degrees C
© 2002 IXYS All rights reserved
100 125 150
0
2
3
4
VGS - Volts
5
6
IXFK 30N50Q
IXFX 30N50Q
Figure 7. Gate Charge
Figure 8. Capacitance Curves
14
10000
Vds=300V
ID=16A
IG=10mA
10
F = 1MHz
Ciss
Capacitance - pF
12
VGS - Volts
IXFK 32N50Q
IXFX 32N50Q
8
6
4
Coss
1000
Crss
2
0
100
0
50
100
150
200
250
0
Gate Charge - nC
5
10
15
20
25
VDS - Volts
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
100
VGS= 0V
ID - Amperes
80
60
TJ=125OC
40
20
TJ=25OC
0
0.4
0.6
0.8
1.0
1.2
VSD - Volts
Figure 10. Transient Thermal Resistance
0.40
R(th)JC - K/W
0.20
0.10
0.08
0.06
0.04
0.02
0.01
10-3
10-2
10-1
100
101
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1