IXFK 180N10
IXFX 180N10
HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
Single MOSFET Die
= 100 V
= 180 A
=
8 mΩ
trr ≤ 250 ns
Preliminary Data
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
IAR
TC = 25°C (MOSFET chip capability)
External lead (current limit)
TC = 25°C, Note 1
TC = 25°C
180
76
720
180
A
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
560
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
Weight
TO-264
0.9/6
PLUS 247
TO-264
Nm/lb.in.
6
10
g
g
Symbol
Test Conditions
VDSS
VGS = 0 V, I D = 3mA
100
V
VGS(th)
VDS = VGS, ID = 8mA
2.0
4.0 V
IGSS
VGS = ±20 V, V DS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, I D = 0.5 • I D25
Note 1
© 1999 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS 247TM
(IXFX)
G
D (TAB)
D
S
TO-264 AA (IXFK)
G
D
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
l
International standard packages
l
Low RDS (on) HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
±100 nA
TJ = 25°C
TJ = 125°C
100 µA
2 mA
8 mΩ
Advantages
l
PLUS 247TM package for clip or spring
mounting
l
Space savings
l
High power density
98552B (7/99)
IXFK 180N10
IXFX 180N10
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 60A
Note 2
60
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
90
S
9400
pF
3200
pF
Crss
1660
pF
td(on)
50
ns
90
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • I D25
td(off)
RG = 1 Ω (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • I D25
Qgd
140
ns
65
ns
400
nC
65
nC
220
nC
RthJC
0.22
RthCK
K/W
0.15
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
180
A
ISM
Repetitive;
pulse width limited by TJM
720
A
VSD
IF = 100A, VGS = 0 V, Note 1
1.5
V
250
ns
trr
QRM
IF = 50A,-di/dt = 100 A/µs, VR = 100 V
IRM
1.1
µC
13
A
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min.
Max.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
5.45
19.81
3.81
5.59
4.32
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
BSC
20.32
4.32
6.20
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
5,017,508
5,034,796
5,049,961
5,063,307
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
5,187,117
5,237,481
5,486,715
5,381,025
IXFK 180N10
IXFX 180N10
Figure 2. Output Characteristics at 125OC
Figure 1. Output Characteristics at 25OC
200
200
VGS=10V
9V
8V
TJ=25OC
ID - Amperes
6V
100
5V
100
5V
0
0
0.0
0.5
1.0
1.5
0
2.0
1
2
3
4
5
VDS - Volts
VDS - Volts
Figure 4. R DS(on) normalized to 15A/25OC vs. T J
Figure 3. R DS(on) normalized to 15A/25OC vs. ID
1.8
2.0
VGS = 10V
O
TJ = 125 C
1.6
RDS(ON) - Normalized
RDS(ON) - Normalized
6V
50
50
1.4
1.2
TJ = 25OC
1.0
1.8
1.6
ID=180A
VGS=10V
VGS=15V
1.4
1.2
ID=90A
VGS=10V
VGS=15V
1.0
0.8
0
50
100
150
0.8
25
200
ID - Amperes
50
75
100
125
150
TJ - Degrees C
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
100
100
80
ID - Amperes
75
ID - Amperes
7V
150
150
ID - Amperes
TJ=125OC VGS=10V
9V
8V
7V
Lead Current Limit
50
60
40
TJ = 125oC
TJ = 25oC
25
20
0
-50
-25
0
25
50
75
100 125 150
TC - Degrees C
2
4
6
VGS - Volts
IXF_180N10-P1
© 1999 IXYS All rights reserved
0
8
IXFK 180N10
IXFX 180N10
Figure 7. Gate Charge
Figure 8. Capacitance Curves
15
F = 100kHz
Capacitance - pF
VGS - Volts
12
Ciss
10000
VDS=50V
Vds=300V
=90A
IIDD=30A
=10mA
IIGG=10mA
9
6
Coss
3
Crss
0
1000
0
50
100 150 200 250 300 350 400
0
5
10
Gate Charge - nC
15
20
25
30
35
40
VDS - Volts
Figure 10. Forward Bias Safe Operating Area
Figure 9. Forward Voltage Drop of the Intrinsic Diode
200
200
100
175
VGS= 0V
1 ms
ID - Amperes
ID - Amperes
150
125
100
TJ=125OC
75
10 ms
10
DC
TC = 25OC
TJ=25OC
50
25
1
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
VSD - Volts
100
VDS - Volts
Figure 11. Transient Thermal Resistance
0.40
R(th)JC - K/W
0.20
Ri :
0.02
0.046
0.154
0.10
0.08
0.06
τι:
0.04
3
R(th)JC = ΣRi{1-exp(-t/τi)}
0.02
i=1
0.01
10-3
10-2
10-1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
100
101
0.007
0.01
0.25