HiPerFASTTM IGBT with Diode IXGH 24N60BU1 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V = 600 V = 48 A = 2.3 V = 80 ns Maximum Ratings VGEM Transient ±30 V IC25 TC = 25°C 48 A IC90 TC = 90°C 24 A ICM TC = 25°C, 1 ms 96 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH ICM = 48 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md VCES IC25 VCE(sat) tfi Mounting torque TO-247 AD C (TAB) G 6 E G = Gate E = Emitter C = Collector TAB = Collector Features • High frequency IGBT and antiparallel FRED in one package • High current handling capability • 3rd generation HDMOSTM process • MOS Gate turn-on - drive simplicity 1.13/10 Nm/lb.in. Weight C g Applications Symbol Test Conditions BVCES IC = 750 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies V 5.5 V 500 8 µA mA ±100 nA 2.3 V Advantages • Space savings (two devices in one package) • High power density • Suitable for surface mounting • Switching speed for high frequency applications • Easy to mount with 1 screw (insulated mounting screw hole) © 2003 IXYS All rights reserved DS95583C(01/03) IXGH 24N60BU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 9 QG QGE S 1500 pF 175 40 pF pF ∅P Cies Coes Cres 13 VCE = 25 V, VGE = 0 V, f = 1 MHz 90 11 IC = IC90, VGE = 15 V, VCE = 0.5 VCES QGC td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 10 Ω 40 nC 25 15 ns ns 80 0.8 increase for VCE (Clamp) > 0.8 • VCES, 24N60BU1 higher TJ or increased RG nC nC 30 0.6 150 Remarks: Switching times may 120 15 200 150 mJ ns ns mJ td(on) 25 ns tri Eon 15 0.8 ns mJ 250 100 ns ns 1.4 mJ td(off) tfi Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 10 Ω 24N60BU1 Eoff TO-247 AD Outline RthJC e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.83 K/W 0.25 RthCK Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF/dt = 240 A/µs VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 10 150 35 1.6 V 15 A ns ns 50 1 K/W RthJC Min. Recommended Footprint (Dimensions in inches and (mm)) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 24N60BU1 50 40 IC - Amperes 200 VGE = 13V 11V 9V VGE = 15V TJ = 25°C 7V 30 VGE = 15V 13V 160 IC - Amperes TJ = 125°C 20 10 11V 120 9V 80 7V 40 5V 5V 0 0 1 2 3 4 0 5 4 8 10 Fig. 1. Saturation Voltage Characteristics Fig. 2. Extended Output Characteristics 1.6 7V 30 20 5V 10 0 1 2 3 IC = 48A VGE = 15V 9V VGE = 15V 13V 11V VCE (sat) - Normalized 40 4 1.4 1.2 IC = 24A 1.0 IC = 12A 0.8 0.6 25 5 50 75 VCE - Volts 100 125 150 TJ - Degrees C Fig. 3. Saturation Voltage Characteristics Fig. 4. Temperature Dependence of VCE(sat) 100 1.2 VCE = 10V BV/VGE(th) - Normalized 80 IC - Amperes 6 VCE - Volts TJ = 125°C IC - Amperes 2 VCE - Volts 50 0 0 60 40 TJ = 125°C 20 VGE(th) IC = 3mA 1.1 1.0 0.9 BVCES IC = 3mA 0.8 TJ = 25°C 0 3 4 5 6 7 8 9 Fig. 5. Admittance Curves © 2003 IXYS All rights reserved 10 11 12 0.7 -50 -25 0 25 50 75 100 125 150 Fig. 6. Temperature Dependence of BVDSS & VGE(th) IXGH 24N60BU1 2.5 2.5 TJ = 125°C IC = 24A RG = 10Ω 2.0 E(ON) / E(OFF) - milliJoules E(ON) / E(OFF) - milliJoules TJ = 125°C E(OFF) 1.5 E(ON) 1.0 0.5 2.0 E(OFF) 1.5 1.0 E(ON) 0.5 0.0 0.0 0 10 20 30 40 0 50 10 Fig. 7. Dependence of tfi and EOFF on IC. 40 50 Fig. 8. Dependence of tfi and EOFF on RG. 100 IC = 24A VCE = 300V IC - Amperes 12 VGE - Volts 30 RG - Ohms IC - Amperes 15 20 9 6 10 TJ = 125°C RG = 10Ω dV/dt < 5V/ns 1 3 0 0.1 0 20 40 60 80 100 0 100 Qg - nanocoulombs 200 300 400 500 600 VCE - Volts Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge 1 D=0.5 RthJC - K/W D=0.2 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH 24N60BU1 25 60 IF = 37A 20 TJ = 150°C 800 VFR VFR - Volts Current - Amperes 80 1000 TJ = 125°C TJ = 100°C 40 TJ = 25°C 20 15 600 10 400 200 5 tfr 0 0.5 0 1.0 1.5 2.0 2.5 0 100 200 300 400 500 0 600 Voltage Drop - Volts diF /dt - A/µs Fig.12 Maximum Forward Voltage Drop Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tFR 1.4 4 TJ = 100°C VR = 350V Qr - nanocoulombs Normalized IRM /Qr 1.2 1.0 0.8 IRM 0.6 Qr 0.4 max. 2 typ. IF = 60A IF = 30A 1 IF = 15A 0.2 0.0 0 0 40 80 120 160 1 10 TJ - Degrees C 1000 Fig.15 Reverse Recovery Chargee 40 0.8 TJ = 100°C IF = 30A VR = 350V IF = 30A TJ = 100°C max. VR = 350V max. trr - nanoseconds 30 IRM - Amperes 100 diF /dt - A/µs Fig.14 Junction Temperature Dependence off IRM and Qr typ. IF = 60A 20 IF = 30A 3 IF = 30A IF = 15A 10 0 0.6 typ. IF = 60A 0.4 IF = 30A IF = 15A 0.2 0.0 200 400 600 diF /dt - A/µs Fig.16 Peak Reverse Recovery Current © 2003 IXYS All rights reserved 0 200 400 diF /dt - A/µs Fig.17 Reverse Recovery Time 600 tfr - nanoseconds 100 IXGH 24N60BU1 RthJC - K/W 1.00 0.10 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds Fig.18 Diode Transient Thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1