Preliminary Data Sheet IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V IXSH15N120A IGBT "S" Series - Improved SCSOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ V GES V GEM Continuous Transient I C25 I C90 I CM TC = 25°C TC = 90°C TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH tsc TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω PC TC = 25°C 1200 1200 V V ±20 ±30 V V 30 15 60 A A A ICM = 30 @ 0.8 VCES A 5 µs 150 W TO-247AD G C E Features •2 nd TJ T JM T STG Md -55 ... +150 150 -55 ... +150 Mounting torque . °C °C °C 1.15/10 Nm/lb-in. Weight Max. Lead Temperature for Soldering (1.6mm from case for 10s) 6 g 300 °C generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BV CES IC = 3.0 mA, V GE = 0 V 1200 V GE(th) IC = 1.5 mA, VCE = VGE 4 I CES VCE = 0.8 VCES , VGE= 0 V Note 2 I GES VCE = 0 V, VGE = ±20 V V CE(sat) IC = IC90, VGE = 15 V ©1996 IXYS Corporation. All rights reserved. • DC choppers Advantages TJ = 25°C TJ = 125°C 8 V • Easy to mount (isolated mounting V hole) Reduces assembly time and cost • 200 µA 1 mA + 100 nA 4.0 V 95586(7/96) IXSH15N120A Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs I C = IC90, VCE = 10 V, Pulse test, t < 300 µs, duty cycle < 2 % IC(on) VGE = 15V, VCE = 10 V Cies Coes Cres VCE = 25 V, VGE = 0 V, f = 1 MHz Qg IC Characteristic Values Min Typ. Max. 6 = Ic90, VGE = 15 V, VCE = 0.5 VCES Qge Qgc 7 S 65 A 1800 160 45 pF pF pF 75 20 35 nC nC nC td(on) tri td(off) tfi Eoff Inductive load, TJ = 25°C I C = IC90, VGE = 15 V, L = 100µH RG = 82 Ω, VCLAMP = 0.8 VCES Note 1 100 200 450 600 5.4 ns ns ns ns mJ td(on) tri E(on) Inductive load, TJ = 125°C I C = IC90, VGE = 15 V, L = 100µH RG = 82 Ω 100 200 1.1 ns ns mJ td(off) VCLAMP = 0.8 VCES 650 ns tfi Note 1 900 ns 14.5 mJ 0.25 0.83 K/W K/W Eoff RthJC RthCK Notes: TO-247AD (IXSH) 1.) Switching times may increase for V CE (Clamp) > 0.8 VCES, higher TJ or RG values. 2.) Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Data contained herein reflects measurements and characterization data from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025