IXYS IXTC26N50P

Advanced Technical Information
PolarHVTM
Power MOSFET
IXTC 26N50P
VDSS = 500
V
= 13
A
ID25
Ω
RDS(on) = 260 mΩ
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
13
A
IDM
TC = 25°C, pulse width limited by TJM
78
A
IAR
TC = 25°C
26
A
EAR
TC = 25°C
40
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
10
V/ns
PD
TC = 25°C
100
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS, t = 1, leads-to-tab
FC
Mounting Force
2500
V~
11..65/2.5..15
N/lb
2
g
Weight
ISOPLUS220TM (IXTC)
E153432
G
VDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
TJ = 125°C
V
5.0
V
±100
nA
25
250
µA
µA
260
mΩ
Isolated Tab
D = Drain
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
DC choppers
z
Characteristic Values
Min. Typ.
Max.
S
G = Gate
S = Source
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
D
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
DS99227(10/04)
IXTC 26N50P
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = T , pulse test
20
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
28
S
3600
pF
380
pF
48
pF
20
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
25
ns
td(off)
RG = 4 Ω (External)
58
ns
tf
20
ns
Qg(on)
96
nC
20
nC
45
nC
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
1.25 K/W
RthJC
RthCK
0.21
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
26
A
ISM
Repetitive
78
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
QRM
ISOPLUS220 Outline
400
ns
5.0
µC
Note: Test Current IT = 13A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXTC 26N50P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25º C
30
60
VGS = 10V
27
VGS = 10V
7V
6V
24
I D - Amperes
21
I D - Amperes
7V
50
18
15
5.5V
12
9
40
6V
30
20
5.5V
5V
6
3
10
5V
4.5V
0
0
0
1
2
3
4
5
6
7
0
8
3
6
9
V D S - Volts
Fig. 3. Output Characteristics
@ 125ºC
18
21
24
27
30
3.1
VGS = 10V
27
2.8
21
R D S ( o n ) - Normalized
7V
6V
24
I D - Amperes
15
V D S - Volts
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
30
5.5V
18
15
12
5V
9
6
VGS = 10V
2.5
2.2
1.9
I D = 26A
1.6
I D = 13A
1.3
1
0.7
4.5V
3
0
0.4
0
2
4
6
8
10
12
14
16
18
20
-50
0
25
50
75
100
125
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
Fig. 6. Drain Current vs. Case
Tem perature
150
27
3.4
24
VGS = 10V
3
-25
V D S - Volts
0.5 ID25 Value vs. ID
21
TJ = 125ºC
2.6
I D - Amperes
R D S ( o n ) - Normalized
12
2.2
1.8
1.4
TJ = 25ºC
1
0.6
18
15
12
9
6
3
0
0
5
10 15 20 25
30 35 40 45
I D - Amperes
© 2004 IXYS All rights reserved
50 55 60
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTC 26N50P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
40
55
50
35
g f s - Siemens
I D - Amperes
30
25
20
15
TJ = 125ºC
25ºC
-40ºC
10
45
TJ = -40ºC
40
25ºC
125ºC
35
30
25
20
15
10
5
5
0
0
3.5
4
4.5
5
5.5
6
6.5
0
5
10
15
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
25
30
35
40
45
90
100
Fig. 10. Gate Charge
10
70
60
VG S - Volts
50
I S - Amperes
20
I D - Amperes
40
30
TJ = 125ºC
20
9
VDS = 250V
8
I D = 13A
7
I G = 10mA
6
5
4
3
2
TJ = 25ºC
10
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
0
V S D - Volts
10
20
30
40
50
60
70
80
Q G - nanoCoulombs
Fig. 12. For w ar d-Bias
Safe Ope r ating Ar e a
Fig. 11. Capacitance
100
10000
25µs
C iss
I D - Amperes
Capacitance - picoFarads
R D S(on) Lim it
1000
C oss
100µs
10
1m s
10m s
1
100
DC
TJ = 150ºC
C rss
f = 1MHz
TC = 25ºC
10
0.1
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - V olts
1000
IXTC 26N50P
Fig. 13. Maximum Transient Therm al Resistance
R ( t h ) J C - ºC / W
10.00
1.00
0.10
0.01
0.1
1
10
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
100
1000