Advanced Technical Information PolarTM HiPerFET Power MOSFET IXFR 200N10P VDSS ID25 RDS(on) Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 100 V VGS ±20 V VGSM ±30 V 133 A 75 A 400 A ID25 TC = 25°C ID(RMS) External lead current limit IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 60 A EAR TC = 25°C 100 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TJ TJM Tstg 50/60 Hz, RMS, 1 minute FC Mounting Force 350 W -55 ... +175 175 -55 ... +150 °C °C °C 2500 V~ 20..120/4.6..20 Nm/lb 5 g Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 500µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved G G = Gate S = Source V TJ = 150°C TJ = 175°C 5.5 5.0 V ±100 nA 25 250 1000 µA µA µA 8 mΩ mΩ D ISOLATED TAB S D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z TC = 25°C VISOL ISOPLUS247 (IXFR) E153432 Fast recovery intrinsic diode Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies DC choppers z z AC motor control Advantages z Easy assembly z Space savings z High power density DS99239(06/05) IXFR 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 97 S 7600 pF 2900 pF 860 pF 30 ns 35 ns 150 ns 90 ns 240 nC 50 nC 135 nC RthJC ISOPLUS247 Outline 0.42 K/W RthCK 0.15 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive 400 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A, dI/dt = 100 A/µs QRM VR = 100 V 100 140 ns 0.4 µC 6 A IRM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXFR 200N10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 200 VGS = 10V 9V 175 VGS = 10V 300 9V 250 I D - Amperes I D - Amperes 150 8V 125 100 75 7V 200 8V 150 7V 100 50 6V 25 50 0 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.5 1 1.5 V D S - Volts Fig. 3. Output Characteristics @ 150ºC 3 3.5 4 4.5 5 2.4 VGS = 10V 9V VGS = 10V 2.2 150 R D S ( o n ) - Normalized 175 I D - Amperes 2.5 Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature 200 8V 125 100 7V 75 6V 50 25 2 1.8 I D = 200A 1.6 1.4 I D = 100A 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 V D S - Volts 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs . Drain Curre nt Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 80 2.4 2.2 70 TJ = 175ºC 2 60 1.8 1.6 I D - Amperes R D S ( o n ) - Normalized 2 V D S - Volts VGS = 10V 1.4 VGS = 15V 1.2 50 40 30 20 1 0.8 10 TJ = 25ºC 0 0.6 0 50 100 150 200 I D - Amperes © 2005 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFR 200N10P Fig. 8. Transconductance 300 140 250 120 100 200 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 150 TJ = -40ºC 100 25ºC 150ºC 50 TJ = -40ºC 25ºC 80 150ºC 60 40 20 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 50 100 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 250 300 350 Fig. 10. Gate Charge VDS = 50V 9 300 I D = 100A 8 250 I G = 10mA 7 VG S - Volts I S - Amperes 200 10 350 200 150 100 6 5 4 3 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 225 250 Q G - nanoCoulombs Fig. Fig . 12. 12. Forw Fo r ward-Bias ar d -Bias Safe Safe Operating Op e r atin g Area Ar e a Fig. 11. Capacitance 100,000 1000 100 0 f = 1MHz ºCºC TJT ==175 1 75 J º TT ºC C ==25 25C R Limit R DS(on) D S (o n ) Lim it C iss 10,000 I DI D- -Amperes Amperes Capacitance - picoFarads 150 I D - Amperes C oss C rss 1,000 C 100µs 10 0µs 100 1 00 1ms 1m s 10ms 10 m s DC 100 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 10 DC 1 1 10 10 V 100 - Volts 100 VDD SS - V olts 1000 10 00 IXFR 200N10P Fig. 13. Maximum Transient Thermal Resistance R( t h ) J C - ºC / W 1.00 0.10 0.01 0.00 0.1 1 10 Pulse Width - milliseconds © 2005 IXYS All rights reserved 100 1000