IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS(on) N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 ID(RMS) IDM IAR TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C 80 75 320 80 A A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC 540 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.7/6 Nm/lb.in. 10 g TO-264 AA (IXTK) G D (TAB) D S G = Gate S = Source D = Drain Tab = Drain Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • • • Motor controls DC choppers Switched-mode power supplies Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 1 mA VGS(th) V DS = VGS, ID = 250 µA IGSS VGS = ±20 V DC, VDS = 0 IDSS V DS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2003 IXYS All rights reserved 250 2.0 TJ = 25°C TJ = 125°C V 4.0 V ±100 nA 50 2 µA mA • • • Easy to mount with one screw (isolated mounting screw hole) Space savings High power density 33 mΩ DS98953A(11/03) IXTK 80N25 Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs Characteristic values Min. Typ. Max. VDS = 10 V; ID = 0.5 ID25, pulse test Ciss 56 S 6000 pF 1125 pF C rss 420 pF td(on) 28 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 40 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 ns td(off) RG = 1.0 Ω (External) 88 ns 24 ns tf 240 Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd nC 40 nC 110 nC 0.23 K/W RthJC RthCK 0.15 Source-Drain Diode K/W TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = 25A, -di/dt = 100 A/µs, VR = 100V Qrr 80 A 320 A 1.5 V 300 ns 3.0 µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXTK 80N25 Fig. 1. Output Characteristics @ 25 De g. C Fig. 2. Extended Output Characteris tics @ 25 de g. C 200 80 VGS = 10V 9V 8V 70 160 140 7V 50 I D - Amperes I D - Amperes 60 40 6V 30 120 100 7V 80 60 20 6V 40 5V 10 20 0 0 0.5 1 1.5 2 2.5 0 Fig. 3. Output Characteristics @ 125 Deg. C 80 60 2 4 5 6 V D S - Volts 7 8 9 10 VGS = 10V 2.4 2.2 R D S (on) - Normalized 50 6V 40 30 5V 2 1.8 I D = 80A 1.6 1.4 I D = 40A 1.2 1 0.8 10 0.6 0 0.4 0 1 2 3 4 5 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to ID25 Value vs . ID Fig. 6. Drain Current vs. Case Tem pe rature 90 3 2.8 VGS = 10V 80 2.6 70 2.4 2.2 TJ = 125ºC 2 1.8 1.6 1.4 TJ = 25ºC 1.2 I D - Amperes R D S (on) - Normalized 3 2.6 7V 20 1 Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Te m perature VGS = 10V 9V 8V 70 5V 0 V D S - Volts I D - Amperes VGS = 10V 9V 8V 180 60 50 40 30 20 10 1 0.8 0 0 20 40 60 80 100 120 140 160 180 200 I D - Amperes © 2003 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTK 80N25 Fig. 8. Transconductance Fig. 7. Input Adm ittance 90 140 80 120 TJ = -40ºC 25ºC 125ºC 70 60 g f s - Siemens I D - Amperes 100 80 60 40 50 40 30 TJ = 125ºC 25ºC -40ºC 20 20 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 0 20 40 60 V G S - Volts 100 120 140 160 Fig. 10. Gate Charge 200 10 180 9 160 8 140 7 VG S - Volts I S - Amperes Fig. 9. Source Current vs . Source-ToDrain Voltage 120 100 80 60 80 I D - Amperes VDS = 125V I D = 40A I G = 10mA 6 5 4 3 TJ = 125ºC 40 2 TJ = 25ºC 20 1 0 0 0.4 0.6 0.8 1 1.2 0 1.4 50 100 150 200 250 Q G - nanoCoulombs V S D - Volts Fig. 12. Forw ard Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 f = 1MHz TC = 25ºC R DS(on) Limit I D - Amperes Capacitance - pF 25µs C iss 1000 C oss 100 1ms DC 10 C rss 1 100 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - Volts 1000 IXTK 80N25 Fig . 13. Fo r w ar d Bias e d Saf e Op e r atin g A r e a (FBSOA ) 0. 2 4 0. 2 2 0. 2 0 R (th) J C - (ºC/W) 0. 1 8 0. 1 6 0. 1 4 0. 1 2 0. 1 0 0. 0 8 0. 0 6 0. 0 4 0. 0 2 0. 0 0 1 10 10 0 Puls e W idth - millis ec onds © 2003 IXYS All rights reserved 10 0 0