HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS(on) trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM IAR TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C 80 320 80 A A A EAR TC = 25°C 64 mJ EAS TC = 25°C 6 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 780 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ TJ VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque = 500 V = 80 A Ω = 55 mΩ ≤ 250 ns t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal of miniBLOC can be used as Main or Kelvin Source Features • International standard package • miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process • • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 500 VGS(th) VDS = VGS, ID = 8 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved TJ = 25°C TJ = 125°C V • • • • Battery chargers Switched-mode and resonant-mode power supplies DC choppers 4.5 V ±200 nA 100 2 µA mA Advantages • Easy to mount 55 mΩ • • Temperature and lighting controls Space savings High power density DS98538E(12/03) IXFN 80N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 0.5 • ID25, pulse test 50 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 70 S 9890 pF 1750 pF C rss 460 pF td(on) 61 ns 70 ns 102 ns 27 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), tf QG(on) QGS 380 nC 80 nC 173 nC VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 QGD RthJC 0.16 RthCK 0.05 Source-Drain Diode K/W K/W miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t < 300 ms, duty cycle d < 2 % t rr QRM IRM IF = 30A, -di/dt = 100 A/µs, VR = 100 V 80 A 320 A 1.3 V 250 ns µC A 1.2 8 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFN 80N50 100 100 VGS = 9V 8V 7V 6V TJ = 25 C ID - Amperes 80 VGS = 9V 8V 7V 6V TJ = 125OC 80 ID - Amperes O 60 5V 40 5V 60 40 4V 20 20 4V 0 0 1 2 3 4 0 5 0 2 4 6 8 10 VDS - Volts VDS - Volts Fig. 1. Output Characteristics Fig. 2. High Temperature Output Characteristics 3.0 VGS = 10V 2.8 2.8 TJ = 125OC 2.4 RDS(ON) - Normalized RDS(ON) - Normalized 2.6 2.2 2.0 1.8 1.6 1.4 O TJ = 25 C 1.2 2.5 2.2 ID = 80A 1.9 ID =40A 1.6 1.3 1.0 0.8 VGS = 10V 0 10 20 30 40 50 60 70 1.0 25 80 50 75 ID - Amperes 150 Fig. 4. Temperature Dependence of RDS(on) 100 50 80 40 ID - Amperes ID - Amperes 125 TJ - Degrees C Fig. 3. Normalized RDS(on) vs. Drain Current 60 40 20 0 100 30 TJ = 125oC 20 TJ = 25oC 10 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Fig. 5 Drain Current vs. Case Temperature IXFN80N50 - PG 1 © 2003 IXYS All rights reserved 0 4.0 4.5 5.0 5.5 6.0 VGS - Volts Fig. 6. Input Admittance 6.5 7.0 7.5 IXFN 80N50 10 30000 VDS = 250 V ID = 40 A IG = 10 mA Ciss 10000 Capacitance - pF VGS - Volts 8 6 4 f = 100kHz Coss 1000 Crss 2 0 100 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Fig. 7 Gate Charge Characteristic Curve Fig. 8 Capacitance Curves 100 VGS = 0V ID - Amperes 80 TJ = 125OC 60 40 TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Volts Fig. 9. Source-to-Drain Voltage Drop R(th)JC - K/W 1.000 0.100 Single Pulse 0.010 0.001 10-4 10-3 10-2 10-1 Pulse Width - Seconds Fig.10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. 100 101